Untitled
Abstract: No abstract text available
Text: JULY 1996 GP1600FSS12S ADVANCE ENGINEERING DATA DS4337-4.2 GP1600FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1600A IC(CONT) 3200A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.
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GP1600FSS12S
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840ns
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Untitled
Abstract: No abstract text available
Text: GP1600FSS12-ABC GP1600FSS12-ABC Powerline N-Channel IGBT Module Advance Information DS5173-1.2 May 1999 The GP1200FSS12-ABC is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power
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GP1600FSS12-ABC
DS5173-1
GP1200FSS12-ABC
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AN4502
Abstract: AN4503 AN4505 GP1600FSS12 set igbt on off Vge DS5173-4
Text: GP1600FSS12 GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information Replaces October 1999 version, DS5173-3.0 DS5173-4.0 January 2000 The GP1600FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the
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GP1600FSS12
DS5173-3
DS5173-4
GP1600FSS12
AN4502
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AN4505
set igbt on off Vge
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Untitled
Abstract: No abstract text available
Text: GP1600FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4337 - 4.2 DS4337 - 4.3 March 1998 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1600A C(CONT) 3200A C(PK) 190ns 840ns APPLICATIONS •
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GP1600FSS12S
DS4337
190ns
840ns
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Untitled
Abstract: No abstract text available
Text: GEC P LE SS EY S E M I C O N D U C T O R S D S 4337-4.2 G P 1 6 0 0 F S S 1 2 S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS • High P ow er Switching. ■ M otor Control. ■ UPS. ■ AC And DC S ervo Drive Amplifiers. TYPICAL KEY PARAMETERS v CES 1200V vv CE sat
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190ns
840ns
44lbs
70lbs
88lbs
18lbs
1500g
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