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    TE Connectivity CRGP1206F560K

    RES 560K OHM 1% 1/2W 1206
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    DigiKey CRGP1206F560K Reel 150,000 5,000
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    TE Connectivity CRGP1206F22K

    RES 22K OHM 1% 1/2W 1206
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    TE Connectivity CRGP1206F2K2

    RES 2.2K OHM 1% 1/2W 1206
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    Avnet Abacus CRGP1206F2K2 113 Weeks 20,000
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    TE Connectivity CRGP1206F680K

    RES 680K OHM 1% 1/2W 1206
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    CRGP1206F680K Cut Tape 8,579 1
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    TE Connectivity CRGP1206F22R

    RES 22 OHM 1% 1/2W 1206
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    CRGP1206F22R Cut Tape 5,623 1
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    Newark CRGP1206F22R Cut Tape 1,868 20,000
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    GP120 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GP120 Halbleiterwerke der DDR Germanium Diodes and Transistors Scan PDF
    GP1200 G-Plus 2.4 GHz Power Amplifier Original PDF
    GP1200 Diotec High Voltage Diode Rectifiers Scan PDF
    GP1200 Diotec HIGH VOLTAGE DIODE RECTIFIERS Scan PDF
    GP1200ESM33 Dynex High Reliability Single Switch IGBT Module Original PDF
    GP1200FSM18 Dynex Hi-Reliability Single Switch IGBT Module Original PDF
    GP1200FSS18 Dynex Single Switch IGBT Module Original PDF
    GP1201FSS18 Dynex Single Switch Low V IGBT Module Original PDF
    GP1204H1F Fiber Optic Center LTF Armored Cable Original PDF
    GP1204H1M Fiber Optic Center LTR Loose Tube Riser Cable Original PDF
    GP1204M1A Fiber Optic Center LTM Standard Outdoor Cable Original PDF
    GP1204M1X Fiber Optic Center LTR Chemical Resistant Cable Original PDF

    GP120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GP1200

    Abstract: gctl
    Text: GP1200 2.4 GHz Power Amplifier Preliminary Datasheet Product Description GP1200 is a high performance power amplifier designed for Bluetooth in the 2.4 GHz band. It is based on InGaP HBT technology and is available in a compact 6 lead LPCC plastic package. With 29dB gain and 23dBm P-1dB, the


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    PDF GP1200 GP1200 23dBm 18nH/0402 nH/0402 gctl

    ZRS1056

    Abstract: No abstract text available
    Text: Data Sheet Model No.: GP120AFK Type : Rechargeable Nickel Cadmium Cylindrical Cell Fast Charge Charge control required Voltage (V) 1.7 Nominal Dimension (with Sleeve) : Φ =17.0mm H =43.0mm 1.6 Applications : Recommended discharge current 120 to 3600mA 1.5


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    PDF GP120AFK 3600mA 1200mA 1200mAh 1320mAh 240mA 600mA 120mA 600mA ZRS1056

    Untitled

    Abstract: No abstract text available
    Text: JULY 1996 GP1200FSS16S ADVANCE ENGINEERING DATA DS4336-4.2 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 1200A IC(CONT) 2400A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control.


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    PDF GP1200FSS16S DS4336-4 270ns 590ns

    723 ic internal diagram

    Abstract: GP1201FSS18 AN4502 AN4503 AN4505 AN4506
    Text: GP1201FSS18 GP1201FSS18 Single Switch Low VCE SAT IGBT Module DS5411-1.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module KEY PARAMETERS VCES (typ)


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    PDF GP1201FSS18 DS5411-1 GP1201FSS18 723 ic internal diagram AN4502 AN4503 AN4505 AN4506

    Untitled

    Abstract: No abstract text available
    Text: JULY 1996 GP1200FSS12S ADVANCE ENGINEERING DATA DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1200A IC(CONT) 2400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.


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    PDF GP1200FSS12S DS4547-1 190ns 840ns

    AN4502

    Abstract: AN4503 GP1200ESM33 DS5308-1
    Text: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001


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    PDF GP1200ESM33 DS5308-1 DS5308-2 GP1200ESM33 AN4502 AN4503

    Untitled

    Abstract: No abstract text available
    Text: GP1600FSS12-ABC GP1600FSS12-ABC Powerline N-Channel IGBT Module Advance Information DS5173-1.2 May 1999 The GP1200FSS12-ABC is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power


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    PDF GP1600FSS12-ABC DS5173-1 GP1200FSS12-ABC

    AN4503

    Abstract: AN4502 AN4505 AN4506 GP1200FSM18 AN5000
    Text: GP1200FSM18 GP1200FSM18 Hi-Reliability Single Switch IGBT Module DS5410-1.2 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 1200A Per Module KEY PARAMETERS VCES typ VCE(sat)


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    PDF GP1200FSM18 DS5410-1 GP1200FSM18 AN4503 AN4502 AN4505 AN4506 AN5000

    AN4503

    Abstract: AN4502 AN4505 GP1200FSS18
    Text: GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module DS5260-3.1 January 2001 KEY PARAMETERS


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    PDF GP1200FSS18 DS5260-2 DS5260-3 GP1200FSS18 AN4503 AN4502 AN4505

    P135H

    Abstract: No abstract text available
    Text: 表压压力变送器(HMGP型) 页码,1/3 表压压力 压压力变送器(HMGP 送器(HMGP型) HMGP型) 技术指标 使用对象:液体气体或蒸汽 测量范围:0~0.25Kpa至0~40MPa 输 出:0~20mADC 电 源:24VDC, 无负载变送器可在12VDC工


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    PDF 25Kpa040MPa 020mADC 24VDC, 12VDC 16cm3 6Mpa014Mpa 20Mpa032Mpa 42Mpa052Mpa 60Mpa 200Hz P135H

    GP1200

    Abstract: sst 90 JEP95 SST12LP00 SST12LP00-QV6E
    Text: 2.4 GHz Power Amplifier SST12LP00 Preliminary Specifications SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: • Single 3.3V Supply • Small Signal Gain: – Typically 29 dB • 23 dBm P-1dB Output • High PAE = 50% at P-1dB • Low idle current


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    PDF SST12LP00 SST12LP002 SST12LP00 S71283-00-000 GP1200 sst 90 JEP95 SST12LP00-QV6E

    full adder circuit using nor gates

    Abstract: full subtractor circuit using nand gate full subtractor circuit using nor gates full subtractor circuit using decoder 8 bit carry select adder verilog codes half adder 74 full subtractor circuit nand gates 8 bit subtractor 3 bit carry select adder verilog codes full subtractor circuit using nand gates
    Text: CLA70000 Series High Density CMOS Gate Arrays DS2462 Recent advances in CMOS processing technology and improvements in design architecture have led to the development of a new generation of array-based ASIC products with vastly improved gate integration densities. This


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    PDF CLA70000 DS2462 full adder circuit using nor gates full subtractor circuit using nand gate full subtractor circuit using nor gates full subtractor circuit using decoder 8 bit carry select adder verilog codes half adder 74 full subtractor circuit nand gates 8 bit subtractor 3 bit carry select adder verilog codes full subtractor circuit using nand gates

    rf power amplifier transistor with s-parameters

    Abstract: JEP95 SST12LP00 SST12LP00-QV6E block diagram of a usb bluetooth dongle
    Text: 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: • High Gain: – Typically 28 dB gain across 2.4– 2.5 GHz over temperatures 0– 85°C • High linear output power: – >24 dBm P1dB


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    PDF SST12LP00 SST12LP002 SST12LP00 S71283-01-000 rf power amplifier transistor with s-parameters JEP95 SST12LP00-QV6E block diagram of a usb bluetooth dongle

    Untitled

    Abstract: No abstract text available
    Text: 2.4-2.5 GHz Power Amplifier SST12LP00 Data Sheet SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: • High Gain: – Typically 28 dB gain across 2.4– 2.5 GHz over temperatures 0– 85°C • High linear output power: – >24 dBm P1dB • High power-added efficiency/low operating current for Bluetooth applications


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    PDF SST12LP00 SST12LP002 SST12LP00 16F-6, S71283-03-000

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    GP1010

    Abstract: AE TCXO 1025 motion sensor doppler ARINC 702 BD 4914 SAW GPS GLONASS filter tic 120 arinc 429 serial transmitter tic 105 motion sensor based on doppler effect
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS FEBRUARY 1994 DS3605-2.2 GP1020 SIX-CHANNEL PARALLEL CORRELATOR CIRCUIT FOR GPS OR GLONASS RECEIVERS The GP1020 is a six-channel CMOS digital correlator which has been designed to work with the GP1010 L1-channel downconverter or other integrated circuits, and may be used to acquire


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    PDF DS3605-2 GP1020 GP1020 GP1010 16-bit AE TCXO 1025 motion sensor doppler ARINC 702 BD 4914 SAW GPS GLONASS filter tic 120 arinc 429 serial transmitter tic 105 motion sensor based on doppler effect

    TIC 107

    Abstract: tic 41 motion sensor doppler tic 225 datasheet SAW GPS GLONASS filter K1 code mark motion sensor based on doppler effect arm microprocessor data sheet CLOCK GENERATOR 10HZ GLONASS chip
    Text: FEBRUARY 1994 DS3605-2.2 GP1020 SIX-CHANNEL PARALLEL CORRELATOR CIRCUIT FOR GPS OR GLONASS RECEIVERS The GP1020 is a six-channel CMOS digital correlator which has been designed to work with the GP1010 L1-channel downconverter or other integrated circuits, and may be used to acquire


    Original
    PDF DS3605-2 GP1020 GP1020 GP1010 16-bit TIC 107 tic 41 motion sensor doppler tic 225 datasheet SAW GPS GLONASS filter K1 code mark motion sensor based on doppler effect arm microprocessor data sheet CLOCK GENERATOR 10HZ GLONASS chip

    Untitled

    Abstract: No abstract text available
    Text: GP1200FSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V CE sat , 3.5V APPLICATIONS • High Pow er Sw itching. ■ M otor C ontrol. ■


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    PDF GP1200FSS16S DS4336

    Untitled

    Abstract: No abstract text available
    Text: Si GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4336-5.8 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. 'cco nt 1200A


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    PDF DS4336-5 GP1200FSS16S

    Untitled

    Abstract: No abstract text available
    Text: GP1200FSS16S M M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R S upersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 Decem ber 1998 TYPICAL KEY PARAMETERS VCES 1600V VCE sa„ 3.5V APPLICATIONS • High Power Switching. ■ Motor Control.


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    PDF DS4336 GP1200FSS16S

    GP1200FSS12S

    Abstract: No abstract text available
    Text: GP1200FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4547 -1 .2 DS4547 -1 .3 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1200A C(CONT) 2400A C(PK) 190ns 840ns APPLICATIONS • High Power Switching.


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    PDF GP1200FSS12S DS4547 190ns 840ns GP1200FSS12S

    Untitled

    Abstract: No abstract text available
    Text: Si G E C P L E S S E Y S E M I C O N D U C T O R S DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS VCES 1200V 2.8V CE sai APPLICATIONS • High Power Switching. ■ Motor Control. 1200A ^C(COhfT) ■ UPS. 2400A 190ns 840ns C(PK)


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    PDF DS4547-1 GP1200FSS12S 190ns 840ns 44lbs 70lbs 88lbs 18lbs 1500g

    PH 71719

    Abstract: gp027 c114 esh GP030 URP15 ad4 1314 2SL42 C14-17 LA 7814 EX237
    Text: I »? il U _,c o £2 ÙSL 2 2 / m M 8IfiSSSïS51! | | | l| | | * I | S | ! ii| | | | | | | | l! I ilii l| g l| ïI ï| i| i | - fr s r T ü T -Ü Ï3 T 83T “W “ ÏÏT —u r — z r “ TO T -fT F T “ 7 TFT - :.s u ¿Va .T I T


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    PDF 0VDDO51 PH 71719 gp027 c114 esh GP030 URP15 ad4 1314 2SL42 C14-17 LA 7814 EX237

    GP1250

    Abstract: GP118 GP1120 GP1150 GP1180 GP1200 1fl7 GP112 gp125 GP140
    Text: DIOTEC ELECTRONICS CORP EÖMTID? DGÜQ177 =lfl7 • DIX SflE J> Data Sheet No.: HVGP-1000-A DIO TEC ELEC T R O N IC S CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 '" P O V V HIGH V O LTA G E D IO D E R E C T IF IE R S


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    PDF M11D7 HVGP-1000-A DO-41 DO-15 MIL-STD-202, GP1250 GP118 GP1120 GP1150 GP1180 GP1200 1fl7 GP112 gp125 GP140