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    Goldstar Electron Co Ltd GM71C4100BJ70

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    GM71C4100BJ Datasheets Context Search

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    GMM794000BS60

    Abstract: GMM794000BS70 GMM794000
    Text: GMM794000BS-60/70/80 LG Semicon Co.,Ltd. Description Features The GM M 794000BS is a 4M x 9 bits Dynamic RAM Module which is assembled 9 pieces of 4M bit DRAM GM71C4100BJ, 4 M x l in 20/26 pin small out-line J-form on a 30 pin single in-line package. The


    OCR Scan     		PDF GMM794000BS-60/70/80 794000BS GM71C4100BJ, GMM794000BS GMM794000BS60 GMM794000BS70 GMM794000

    GM71C4100BI

    Abstract: GMM794000 GM71C4100 iqm7
    Text: @ LG Semicon. Co. LTD. Description Features The GMM794000BS is a 4M x 9 bits Dynamic RAM Module which is assembled 9 pieces of 4M bit DRAM GM71C4100BJ, 4Mxl in 20/26 pin small out-line J-form on a 30 pin single in-line package. The GMM794000BS is a socket type memory


    OCR Scan     		PDF GMM794000BS GM71C4100BJ, GMM794000BS-60 GMM794000BS-70 GMM794000BS- 00D7b04 0007b05 0007b0L> GM71C4100BI GMM794000 GM71C4100 iqm7

    BS-80

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD._ Description Features The GMM784000BS is a 4M x 8 bits Dynamic RAM Module which is assembled 8 pieces of 4M bit DRAM GM71C4100BJ, 4Mxl in 20/26 pin small out-line J-form on a 30 pin single in-line package. The GMM784000BS is a socket type memory


    OCR Scan     		PDF GMM784000BS GM71C4100BJ, GMM784000BS-60 GMM784000BS-70 GMM784000BS-80 GMM78400OBS 402A757 BS-80

    MAS 10 RCD

    Abstract: M74000
    Text: GMM784000BS-60/70/80 LG Semicon Co.,Ltd. Description The GMM784000BS is a 4M x 8 bits Dynamic RAM Module which is assembled 8 picces of 4M bit DRAM GM71C4100BJ, 4 M x l in 20/26 pin small out-line J-form on a 30 pin single in-line package. The G M M 784000BS is a socket type memory


    OCR Scan     		PDF GMM784000BS-60/70/80 GMM784000BS GM71C4100BJ, 784000BS GMM784000BS- GMM784000BS MAS 10 RCD M74000

    GM71C18160AJ7

    Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
    Text: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I


    OCR Scan     		PDF GM71C1000B-60 GM71C 1OO0BJ-60 1000BZ-60 100OBL-6O 1000BLJ-60 GM71C1000BLZ-60 GM71C18160AJ7 GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15

    GM76C88AL FW

    Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
    Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20


    OCR Scan     		PDF GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 200uA) 512cydes/8ms 18DIP GM76C88AL FW 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8

    GM76C256all

    Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
    Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60


    OCR Scan     		PDF GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80 351MxB GM23C8000A/AF 32DIP 32SOP GM76C256all 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410

    GM71C4100BJ

    Abstract: No abstract text available
    Text: Rev. 0. GMM784000BS-60/70/80 GoldStar 4 .1 9 4 .3 0 4 W O R D S x 8 BIT GMM794000BS-60/70/80 GOLDSTAR ELECTRON CO., LTD. 4 .1 9 4 .3 0 4 W O R D S x 9 BIT CMOS DYNAMIC RAM MODULE Description Features T h e G M M 78 9|4000B S is 4M x 8(9 D y n a m ic RAM M O D U L E o rg a n iz e d a s 4 ,1 9 4 ,3 0 4 x 8 (9 ) b its a n d


    OCR Scan     		PDF GMM784000BS-60/70/80 GMM794000BS-60/70/80 4000B GMM784000BS/GMM794000BS GMM784000BS. 4G2A757 0003fiSt, GM71C4100BJ

    gm71c4100

    Abstract: 71C4100 GM7IC4100 GM71C4100B/BL
    Text: GM71C4100B/BL LG Semicon Co.,Ltd. 4,194,304 W ORDS x 1BIT CMOS DYNAMIC RAM Description Features The GM 71C4100B/BL is the new generation dynamic RAM organized 4,194,304 x 1 bit. G M 71C 4 100B/BL has realized higher density, higher performance and various functions by utilizing


    OCR Scan     		PDF GM71C4100B/BL 71C4100B/BL 100B/BL GM71C41 300mil 20pin 400mil gm71c4100 71C4100 GM7IC4100 GM71C4100B/BL

    GM71C4400BJ70

    Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
    Text: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80


    OCR Scan     		PDF 71C1000B-70 1OOOBJ-70 71C1000BZ-70 71C1000B-80 1OOOBJ-80 71C1000BZ-80 71C1000BL-80 1000B I000H GM71C1000B-60 GM71C4400BJ70 GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256

    GM71C4100

    Abstract: bl70 BLT70 BL-70 gm71c4100bj GM71C4104 bl80
    Text: @ LG Semicon. Co. LTD._ Description Features The GM71C4100B/BL is the new generation dynamic RAM organized 4,194,304 x 1 bit. GM71C4100B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The


    OCR Scan     		PDF GM71C4100B/BL 300mil 20pin 400mil GM71C4100 bl70 BLT70 BL-70 gm71c4100bj GM71C4104 bl80