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    GI1001 Search Results

    GI1001 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GI1001 General Semiconductor GLASS PASSIVATED FAST EFFICIENT RECTIFIER Original PDF
    GI1001 General Semiconductor GLASS PASSIVATED FAST EFFICIENT RECTIFIER Original PDF
    GI1001 Unknown Silicon Diode Original PDF
    GI1001 Vishay DIODE ULTRA FAST RECOVERY RECTIFIER 50V 1A 2 pin DO-204AP Original PDF
    GI1001 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    GI1001 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    GI1001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DO-204AP

    Abstract: GI1001 GI1002 GI1003 GI1004
    Text: GI1001 / 1002 / 1003 / 1004 VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability


    Original     		PDF GI1001 DO-204AP MIL-STD-750, GI1001 GI1002 GI1003 08-Apr-05 GI1002 GI1003 GI1004

    GI1001

    Abstract: GI1004 DO-204AP GI1002 GI1003
    Text: GI1001 THRU GI1004 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere D * FEATURES P A T E N T E DO-204AP 0.034 0.86 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. 1.0 (25.4)


    Original     		PDF GI1001 GI1004 DO-204AP MIL-S-19500 50mVp-p GI1004 DO-204AP GI1002 GI1003

    GI1004

    Abstract: DO-204AP GI1001 GI1002 GI1003
    Text: GI1001 THRU GI1004 Glass Passivated Ultrafast Rectifier Reverse Voltage 50 to 200 V Forward Current 1.0 A DO-204AP Features 0.034 0.86 0.028 (0.71) DIA. • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency


    Original     		PDF GI1001 GI1004 DO-204AP MIL-S-19500 DO-204AP 50mVp-p GI1004 GI1002 GI1003

    GI1004

    Abstract: DO-204AP GI1001 GI1002 GI1003
    Text: GI1001 THRU GI1004 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere D * FEATURES P A T E N T E DO-204AP 0.034 0.86 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. 1.0 (25.4)


    Original     		PDF GI1001 GI1004 DO-204AP MIL-S-19500 50mVp-p GI1004 DO-204AP GI1002 GI1003

    Untitled

    Abstract: No abstract text available
    Text: GI1001 / 1002 / 1003 / 1004 VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability


    Original     		PDF GI1001 DO-204AP MIL-STD-750, GI1002 GI1003 GI1004

    GI1004

    Abstract: DO-204AP GI1001 GI1002 GI1003
    Text: GI1001 to GI1004 VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability


    Original     		PDF GI1001 GI1004 DO-204AP MIL-STD-750, GI1001 GI1002 GI1003 GI1004 DO-204AP GI1002 GI1003

    GI1001

    Abstract: GI1002 GI1003 GI1004 DO-204AP
    Text: GI1001 / 1002 / 1003 / 1004 VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability


    Original     		PDF GI1001 DO-204AP MIL-STD-750, GI1001 GI1002 GI1003 18-Jul-08 GI1002 GI1003 GI1004

    GI1004

    Abstract: MIL-S-19500 DO-204AP GI1001 GI1002 GI1003
    Text: GI1001 thru GI1004 Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Reverse Voltage 50 to 200V Forward Current 1.0A DO-204AP Features 0.034 0.86 0.028 (0.71) DIA. • • • • • High temperature metallurgically bonded construction


    Original     		PDF GI1001 GI1004 DO-204AP MIL-S-19500 50MVp-p 25-Feb-02 GI1004 MIL-S-19500 DO-204AP GI1002 GI1003

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


    Original     		PDF

    BYD74G

    Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
    Text: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any


    Original     		PDF 5KA10 5KA10A 5KA11 5KA11A 5KA12 5KA12A 5KA13 5KA13A 5KA15 5KA15A BYD74G FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z

    FUR460

    Abstract: GUR460 UF4007 SMD Spice UF5408 MUR Motorola fast diode UF5400 "spice model" uf5408 SMD diode SMA UF4007 GENERAL SEMICONDUCTOR SMD DIODES mur 460 data
    Text: N E GUR440 & GUR460 MUR440 & MUR460 Ultrafast Axial-Leaded Rectifiers W P R O New Four Ampere Axial Introduction GUR460 Features Cross Reference GUR460 Applications Ultrafast Recovery FER Selector Chart Spice Model Parameters D U To view the datasheets please click here ➔


    Original     		PDF GUR440 GUR460 MUR440 MUR460 GUR460 GUR440, GUR460, MUR440 MUR460. FUR460 UF4007 SMD Spice UF5408 MUR Motorola fast diode UF5400 "spice model" uf5408 SMD diode SMA UF4007 GENERAL SEMICONDUCTOR SMD DIODES mur 460 data

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    MUR120 SMD

    Abstract: diode DGP30 VH500 SMA UF4007 SMD DIODE UF4007 b330la UGF10FCT ss2ph10 UGF5 uf5408 SMD diode
    Text: 半導体: 整流素子 • 小信号ダイオード • ツェナーダイオードとサージ吸収素子 • MOSFETs • 高周波トランジスタ • オプトエレクトロニクス • ICs 受動素子: 抵抗器 • 磁性体 • キャパシタ • ひずみゲージ変換器および応力解析システム


    Original     		PDF UL94V-0) ITO-220AB O-220 MUR120 SMD diode DGP30 VH500 SMA UF4007 SMD DIODE UF4007 b330la UGF10FCT ss2ph10 UGF5 uf5408 SMD diode

    8YV27-200

    Abstract: VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B
    Text: LOW CURRENT AXIAL FAST EFFICIENT RECTIFIERS FE1A thru FE1D GI1001 thru GI1004 FE2A thru FE2D BYV27-50 thru BYV27-200 G/1tOI thru G11104 DO-2MAP D0-204AP DO-240AP D0-204AP D0204AP G4 G4 G4 G4 G4 1 1 2 2 2.5 3.0 3.5 5.0 6.0 6.0 VR-50 V FE1A GH 001 FE2A BYV27-50


    OCR Scan     		PDF VR-50 VR-100 VR-150 VR-300 VR-500 VR-600 VR-1000 GI1001 GI1004 8YV27-200 VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B

    GI1004

    Abstract: No abstract text available
    Text: GI1001 THRU GI1004 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere _ FEATURES_ PO-.2Q4AP 1.0 ¿5.4, MIN h u4 «-T 1.0 (25.4 MIN 1 Dimensions in inches and (millimeters) • Brazed lead assembly is covered by Patent No. 3,930,30


    OCR Scan     		PDF GI1001 GI1004 MIL-S-19500 D0-204AP GI1004

    EGP300

    Abstract: FEPI6GT ug2d equivalent FEP16FT equivalent fepi6 FEP30FP DO-214M FEP6DT equivalent FES16CT FES16DT
    Text: FA S T E F F IC IE N T R E C T IF IE R S 10 A CASE TYPE 0.50 0.60 D0-Z13AA MINI'MELF UG06 1.0 00- 204AL DO-i?04AP 00-2 04AL «► I D0-204AP | I1 II % I V rrm (VOLTS) 50 fcGLMA UG06A# F6P1GA UF4001# FE1A UG1A# GI1001 100 COI M B UG06B# ESP18B UF4002# FE1B


    OCR Scan     		PDF D0-Z13AA 204AL D0-204AP UF4005# UF4006# UF4007# BYV26D BYV26E EGL34C EGL34D EGP300 FEPI6GT ug2d equivalent FEP16FT equivalent fepi6 FEP30FP DO-214M FEP6DT equivalent FES16CT FES16DT

    byv260

    Abstract: W10G MBRB1060 SBLB2030CT SBLB2040CT ug2d 1N8478 KBU8M 514
    Text: NUMERICAL INDEX 1.5KA6.8 thru 1.5KA43A.614 BYM12-50 thru BYM12-400 .77 FES8AT thru FES8JT . 149 1.5KE6.8 thru 1.5KE440CA.564 BYM13-20 thru BYM13-60 .355 BYV260 and BYV26E. 75


    OCR Scan     		PDF 5KA43A. 5KE440CA. 1N3611GPthru 1N3614GP. 1N3957GP 1N4001 1N4007 1N4001GP 1N4007GP. 1N4245 byv260 W10G MBRB1060 SBLB2030CT SBLB2040CT ug2d 1N8478 KBU8M 514

    5SBA20

    Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
    Text: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.


    OCR Scan     		PDF 5KA43A 5KE440CA 1N746 1N759 1N957 1N979 ZTK33C Z4KE100 ZGL41 ZGL41-200A 5SBA20 ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249

    g1758

    Abstract: BYV27-200 byw32-200 G30D GP25M
    Text: v G eneral S e m ic o n d u c t o r DEVICE NUMERICAL INDEX PAGE DEVICE PAGE DEVICE PAGE 1.5KA6.8 thru 1.5KA43, A . 52 BA157GP thru B A 1 5 9 G P . 18 EGL34A thru EGL34G . 28 1.5KE6.8 thru 1.5KE440, A, CA . 53


    OCR Scan     		PDF 5KA43, 5KE440, 1N3611GP 1N3957GP 1N4001 1N4007, 1N4148, 1N4150 1N4151, 1N4245 g1758 BYV27-200 byw32-200 G30D GP25M

    Untitled

    Abstract: No abstract text available
    Text: Gl 1001 THRU GI1004 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere _ FEATURES_ DO-2Q4AP <<? T 0.034 0.86 0.0 2 8 (0.71) 1.0 DIA. (25 .4) ♦ ♦ ♦ ♦ ♦ MIN. HV \J A


    OCR Scan     		PDF GI1004 GI1001