GHZ DB TRANSISTOR Search Results

GHZ DB TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

GHZ DB TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
8909E Abstract: AT-42000 AT-42000-GP4 S21E Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz	Original	AT-42000 AT-42000 RN/50 5965-8909E 8909E AT-42000-GP4 S21E	PDF
AT42070 Abstract: AT-42070 S21E Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz	Original	AT-42070 AT-42070 AT42070 RN/50 5965-8912E 5966-4945E S21E	PDF
AT-42035 Abstract: micro-x 420 S21E Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz	Original	AT-42035 AT-42035 RN/50 5965-8911E 5988-4734EN micro-x 420 S21E	PDF
AT-42035 Abstract: S21E Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz	Original	AT-42035 AT-42035 RN/50 S21E	PDF
AT-42070 Abstract: S21E AT42070 Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz	Original	AT-42070 AT-42070 RN/50 S21E AT42070	PDF
LB 1639 Abstract: transistor TT 3043 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP	OCR Scan	NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B LB 1639 transistor TT 3043	PDF
Untitled Abstract: No abstract text available Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT	Original	AT-41486 5965-8928E 5968-2031E	PDF
AT-41486 Abstract: NF50 S21E AT41486 AT-41486-BLK AT-41486-TR1 Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT	Original	AT-41486 AT-41486 AT41486 RN/50 5965-8928E 5968-2031E NF50 S21E AT-41486-BLK AT-41486-TR1	PDF
AT-41485 Abstract: agilent at41485 S parameters of 5.8 GHz transistor AT41485 NF50 S21E 16MSG Ghz dB transistor Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz • High Gain-Bandwidth	Original	AT-41485 AT-41485 AT41485 RN/50 5965-8926E agilent at41485 S parameters of 5.8 GHz transistor NF50 S21E 16MSG Ghz dB transistor	PDF
41470 Abstract: UHF transistor GHz AT-41470 NF50 S21E Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth	Original	AT-41470 AT-41470 RN/50 5965-8927E 5966-4946E 41470 UHF transistor GHz NF50 S21E	PDF
transistor tj 2499 Abstract: No abstract text available Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41435 Features • Low Noise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth	Original	AT-41435 AT-41435 RN/50 5965-8925E transistor tj 2499	PDF
BJT BF 331 Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	NE680 NE680 24-Hour BJT BF 331 mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE68018	PDF
AT-41435 Abstract: AT41435 NF50 S21E Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41435 Features • Low Noise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth	Original	AT-41435 AT-41435 AT41435 5988-4733EN 5988-9279EN NF50 S21E	PDF
transistor BF 697 Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507 Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE	Original	NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507	PDF

AT-42000 Abstract: low noise amplifier ghz AT-42000-GP4 S21E 42000GP4 Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz	Original	AT-42000 AT-42000 RN/50 low noise amplifier ghz AT-42000-GP4 S21E 42000GP4	PDF
RN50 Abstract: S parameters of 5.8 GHz transistor Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41485 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz	OCR Scan	AT-41485 AT-41485 Rn/50 RN50 S parameters of 5.8 GHz transistor	PDF
Untitled Abstract: No abstract text available Text: m AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor HEWLETT PACKARD Features • • • • • 86 Plastic Package Low Noise Figure:1.4 dB typical at 1.0 GHz 1.7 dB typical at 2.0 GHz High AssociatedGain: 18.0 dB typical at 1.0 GHz 13.0 dB typical at 2.0 GHz	OCR Scan	AT-41486	PDF
AT-42085 Abstract: AT42085 P 55 NFO S21E Agilent IC Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42085 Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz • Low Noise Figure: 2.0 dB Typical NFO at 2.0 GHz	Original	AT-42085 AT-42085 AT42085 RN/50 5965-8913E P 55 NFO S21E Agilent IC	PDF
AT-41485 Abstract: NF50 S21E AT41485 Text: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41485 Features • Low Noise Figure: 1.4 dB Typical at 1.0␣ GHz 1.7 dB Typical at 2.0␣ GHz • High Associated Gain: 18.5 dB Typical at 1.0␣ GHz 13.5 dB Typical at 2.0␣ GHz • High Gain-Bandwidth	Original	AT-41485 AT-41485 5965-8926E RN/50 NF50 S21E AT41485	PDF
chip die npn transistor Abstract: issi 727 Text: f T 3 B HEWLETT ISSI PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz	OCR Scan	AT-41400 AT-41400 Rn/50 chip die npn transistor issi 727	PDF
transistor c 2499 Abstract: No abstract text available Text: m AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor H EW LETT PACKARD Features • • • • 35 micro-X Package Low Noise Figure: 1.7 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.0 dB typical at 2.0 GHz 10.0 dB typical at 4.0 GHz	OCR Scan	AT-41435 transistor c 2499	PDF
Untitled Abstract: No abstract text available Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz • High Gain at 1 dB Compression: 13.5 dB Typical G1 dB at 2.0 GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth	Original	AT-42086 gai52 5965-8914E	PDF
Untitled Abstract: No abstract text available Text: AVANTEK INC EOE D AVANTEK • lim u h AT-60510 Up to 6 GHz Low Noise . Silicon Bipolar Transistor • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.0 dB typical at 2.0 GHz 7.5 dB typical at 4.0 GHz	OCR Scan	AT-60510	PDF
mje 1303 Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	NE680 NE680 NE68039-T1 NE68039R-T1 mje 1303 transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000	PDF

GHZ DB TRANSISTOR Search Results

GHZ DB TRANSISTOR Result Highlights (5)

GHZ DB TRANSISTOR Datasheets Context Search

8909E

AT42070

AT-42035

AT-42035

AT-42070

LB 1639

Untitled

AT-41486

AT-41485

41470

transistor tj 2499

BJT BF 331

AT-41435

transistor BF 697

AT-42000

RN50

Untitled

AT-42085

AT-41485

chip die npn transistor

transistor c 2499

Untitled

Untitled

mje 1303