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    GERMANIUM TRANSISTOR OC Search Results

    GERMANIUM TRANSISTOR OC Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM TRANSISTOR OC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFU610F

    Abstract: SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power
    Text: BFU610F NPN wideband silicon germanium RF transistor Rev. 01 — 17 June 2010 Objective data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU610F OT343F BFU610F SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power

    TA 8644

    Abstract: BFP690 SCT595 GMA marking
    Text: BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5  For medium power amplifiers  Maxim. available Gain Gma = 17 dB at 1.8 GHz 3  Gold metallization for high reliability 2  70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP690 VPW05980 SCT595 200mA Oct-30-2002 TA 8644 BFP690 SCT595 GMA marking

    germanium transistors PNP

    Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
    Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,


    Original     		PDF IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR

    Transistor C 1279

    Abstract: 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter
    Text: LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Product Description The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. Low phase noise oscillators up to 16 GHz VCO’s, DRO’s and YIG oscillators


    Original     		PDF LPT16ED LPT16ED 16GHz. OC-192 OC-768 38-DST-01 Transistor C 1279 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter

    2N158

    Abstract: germanium Power Transistor HD R 433 M MD-Z1 c 1031 hall effect transistor BCCMD Germanium power
    Text: ● MIL.S.19500/24D 18 March 1970 SUPERSEDING MI L-s.19500/24c 14 May 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER TYPE 2N 158 This specifimticm partmenls is mandatory nnd/lgcncics for use of the Department by .11 Ocof Dcfensc.


    Original     		PDF 19500/24D 19500/24c CCU51DERED 2N158 germanium Power Transistor HD R 433 M MD-Z1 c 1031 hall effect transistor BCCMD Germanium power

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ

    nec 2012

    Abstract: NESG270034 2012 NEC PU10577EJ01V0DS nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		PDF NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ nec 2012 NESG270034 2012 NEC PU10577EJ01V0DS nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ

    BFP640 noise figure

    Abstract: s parameters 4ghz
    Text: BFP640 E/L6327 and E/L7764 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 E/L6327 E/L7764 L6327 L7764 VPS05605 BFP640 Oct-30-2003 BFP640 noise figure s parameters 4ghz

    NEC ROHS COMPLIANT

    Abstract: NEC PART NUMBER MARKING NESG3032M14 NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz


    Original     		PDF NESG3033M14 NESG3032M14. NESG3033M14-A NEC ROHS COMPLIANT NEC PART NUMBER MARKING NESG3032M14 NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A

    MT6L76FS

    Abstract: No abstract text available
    Text: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10


    Original     		PDF MT6L76FS MT3S06FS MT3S106FS MT6L76FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S36FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 8


    Original     		PDF MT6L67FS MT3S36FS MT3S106FS

    NESG250134

    Abstract: NESG250134-AZ NESG250134-T1-AZ
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG250134 NESG250134-AZ NESG250134-T1 NESG250134 NESG250134-AZ NESG250134-T1-AZ

    Untitled

    Abstract: No abstract text available
    Text: MT6L75FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L75FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10


    Original     		PDF MT6L75FS MT3S07FS MT3S106FS

    MT6L73FS

    Abstract: No abstract text available
    Text: MT6L73FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L73FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S109FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10


    Original     		PDF MT6L73FS MT3S07FS MT3S109FS MT6L73FS

    nec 2501

    Abstract: 2501 NEC ic nec 2501 NESG260234
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ nec 2501 2501 NEC ic nec 2501

    NESG3032M14

    Abstract: NEC ROHS COMPLIANT HBT transistor s parameters measures nec rohs marking
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz


    Original     		PDF NESG3032M14 NESG3032M14-A NESG3032M14 NEC ROHS COMPLIANT HBT transistor s parameters measures nec rohs marking

    Untitled

    Abstract: No abstract text available
    Text: BFP620F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 • Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain TSFP-4


    Original     		PDF BFP620F

    BFP620F

    Abstract: No abstract text available
    Text: BFP620F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 • Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain TSFP-4


    Original     		PDF BFP620F BFP620F

    transistor K52

    Abstract: germanium transistor pnp GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard germanium pnp germanium transistor mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS power ac audio transistor small signal transistor
    Text: EDISW A N MAZDA X C IO I AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE GEN ERAL The X C IO I is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element of the transistor is hermetically sealed in a small can.


    OCR Scan     		PDF

    2N1011

    Abstract: marking 67A
    Text: MIL-S-ì9500/ó7A EL 10 October i 960 SUPERSEDING MIL-T-19500/67(SigC) 22 January 1959 MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM, 50-WATT TYPE 2N1011 1; 1 Scope,- This specification covers the detail requirements for germanium, PNP, power transistors for use in compatible equipment circuits. (See 3.4 and 6.2 herein.)


    OCR Scan     		PDF MIL-S-19500/67A MIL-T-19500/67 50-WATT 2N1011 -65to 5961-AO78 2N1011 marking 67A

    ci 740

    Abstract: ci740 germanium transistor pnp XBI03 germanium Power Transistor Lf transistor power germanium transistor pnp Germanium common collector PNP transistor lf
    Text: E D ISW A N MAZDA XBI03 L.F. T R A N S IS T O R Germanium PN P Junction Type _ T E N T A T IV E GENERAL The X B I0 3 is a germanium pnp junction type transistor suitable for use as an L.F. Amplifier The element of the transistor is hermetically sealed in a small can.


    OCR Scan     		PDF XBI03 ci 740 ci740 germanium transistor pnp germanium Power Transistor Lf transistor power germanium transistor pnp Germanium common collector PNP transistor lf

    2N1046

    Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
    Text: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an


    OCR Scan     		PDF 2N1046 DC-11 germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e

    transistor kc 2026

    Abstract: 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 2n173 2N2079A MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026
    Text: M IL -S-19500/340 17 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N2079A This specification Is mandatory for use by all D epart­ m ents and Agencies of the D epartm ent of Defense. 1 s SCOPE 1.1 Scope. T his specification covers the detailed req u irem en ts for a high-pow er, germanium,


    OCR Scan     		PDF MIL-S-19500/340 2N2079A Adc-19500/340 2N2079A 2N173 2N2079 2N277 2N2080, 2N2080A 2N278 transistor kc 2026 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026

    2N599 JAN

    Abstract: 2N599 N468 MIL-S-19491 Y2 TRANSISTOR CONFORMANCE pnp germanium transistor
    Text: M IL-S-19500/186C NAVY 22 June 1964 SUPERSEDING MIL-S-l9500/166B(NAvy) 20 September 1962 (See 6.2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, TYPE 2N599 1. SCOPE 1.1 D escription.- This Specification covers the detailed requirem ents for a PNP germanium transistor


    OCR Scan     		PDF MIL-S-19500/166C 19500/166B 2N599 MIL-S-19500, 2N599. M3L-S-19500/166C SH70ST 2N599 JAN 2N599 N468 MIL-S-19491 Y2 TRANSISTOR CONFORMANCE pnp germanium transistor