AC188
Abstract: AD156 AUY10 OC23 AC188-01 2N4106 AD157 ac128 2S8473 ADY20
Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 < NthAmerSemi Germanium See Index Space Power SemieonTech Solid Stine Solid Stine Solid Stine Solid Stine NthAmerSemi ~g~~~ ~ermanlum Germanium NthAmerSemi NthAmerSemi Germanium Germanium NthAmerSemi
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ADY10
2N2786
2N1940
2S8180
2S8466
2S863
2S8467
ADY12
AC188
AD156
AUY10
OC23
AC188-01
2N4106
AD157
ac128
2S8473
ADY20
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ADZ12
Abstract: DTG-1200 DTG-2400 germanium DTG2400 adz11 dtg1200 2N513A 2N2075A 2N2075
Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 30 40 See Index See Index See Index Germanium Germanium SemieonTeeh Germanium See Index See Index See Index 15 15 15 15 15 15 15 15 15 15 ~~~~~~ ~eelndex ~~ 2N314S 2N2079 2N2079A 2N2S12 2Nl0318
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2Nl147A
2NS778
2N1358A
DTG2100
COT9408
DTG1040
2NS788
2N2075
2N2075A
2N314S
ADZ12
DTG-1200
DTG-2400
germanium
DTG2400
adz11
dtg1200
2N513A
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2N1039
Abstract: No abstract text available
Text: 2N1039 Ge PNP Power BJT 6.75 Transistors Bipolar Germanium PNP Power Transistors. Page 1 of 1 Enter Your Part # Home Part Number: 2N1039 Online Store 2N1039 Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N1039
2N1039
com/2n1039
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2N1136b
Abstract: No abstract text available
Text: 2N1136B Ge PNP Power BJT 16.98 Transistors Bipolar Germanium PNP Power Transist. Page 1 of 1 Enter Your Part # Home Part Number: 2N1136B Online Store 2N1136B Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N1136B
2N1136B
com/2n1136b
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2N1183B
Abstract: No abstract text available
Text: 2N1183B Ge PNP Power BJT 19.98 Transistors Bipolar Germanium PNP Power Transist. Page 1 of 1 Enter Your Part # Home Part Number: 2N1183B Online Store 2N1183B Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N1183B
2N1183B
com/2n1183b
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NTE110A
Abstract: 107 10V germanium NTE110 "Germanium Diode" Germanium power
Text: NTE110A Germanium Diode General Purpose Features: D Low Forward Voltage Drop D Low Power Consumption D Very Low Noise Level Absolute Maximum Ratings: TA = +25°C unless otherwise specified Peak Reverse Voltage, PRV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
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NTE110A
150mA
NTE110A
107 10V
germanium
NTE110
"Germanium Diode"
Germanium power
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2N297A
Abstract: GERMANIUM PNP LOW POWER TRANSISTORS
Text: 2N297A Ge PNP Power BJT 10.00 Transistors Bipolar Germanium PNP. 1 of 2 Home Part Number: 2N297A Online Store 2N297A Diodes G e PNP Po w er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits
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2N297A
com/2n297a
2N297A
GERMANIUM PNP LOW POWER TRANSISTORS
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2N539A
Abstract: No abstract text available
Text: 2N539A Ge PNP Power BJT 18.00 Transistors Bipolar Germanium PNP. 1 of 1 Home Part Number: 2N539A Online Store 2N539A Diodes G e PNP Po w er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits
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2N539A
com/2n539a
2N539A
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power BJT PNP
Abstract: 2N2567
Text: 2N2567 Ge PNP Power BJT 6.88 Transistors Bipolar Germanium PNP . 1 of 2 Home Part Number: 2N2567 Online Store 2N2567 Diodes G e PNP Po w er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits
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2N2567
com/2n2567
2N2567
power BJT PNP
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2n4280
Abstract: N4560
Text: 2N4280 Ge PNP Power BJT 37.98 Transistors Bipolar Germanium PNP. 1 of 1 Home Part Number: 2N4280 Online Store 2N4280 Diodes G e PNP Po w er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits
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2N4280
com/2n4280
2N4280
N4560
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OA47
Abstract: diode oa47
Text: JSIIEU ^zmi-donaueto'i ^roauati, Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. OA47 Gold Bonded Germanium Diode FEATURES Low forward voltage drop —low power consumption Thirty years of proven reliability
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300mA
100mA
OA47
diode oa47
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bjt specifications
Abstract: 2N652A power BJT PNP
Text: 2N652A Ge PNP Lo-Pwr BJT 4.10 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Part Number: 2N652A Online Store 2N652A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N652A
2N652A
com/2n652a
bjt specifications
power BJT PNP
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2N1303
Abstract: No abstract text available
Text: 2N1303 Ge PNP Lo-Pwr BJT 3.90 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N1303 Online Store 2N1303 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N1303
2N1303
com/2n1303
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Germanium Power Diodes
Abstract: BD3 tunnel diode Germanium Power Devices
Text: Germanium Power Devices Corp. r— rr— r - - -— :- Specifications BACK DIODES BDl, 2, 3, 4, 5, 6 & 7 are germanium back diodes which make use of the quantum mechanical tunneling phenomenon, thereby attaining a very low forward voltage
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350mv)
Germanium Power Diodes
BD3 tunnel diode
Germanium Power Devices
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Cv7003
Abstract: Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91
Text: Newmarket Semiconductors Diodes/Germanium Alloy Power Transistors P N P Germanium Alloy Power Transistors Outline drawing No. M Ap p lies. To-3 . R E FE R E N C E T A B L E Maxim um ratings. C h aracte ristics T . mb = 25° C, Cad* BVc eo BVCbo BVebo *cm
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2772SC
7726A
27727X.
34768X
GET103
31419X
BS9300-C084)
31428H
GET116
31420B
Cv7003
Newmarket Transistors
cv7042
OC71
cv7004
CV 7085
OC72
OA47 germanium
oc77
OA91
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UD1001
Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
UD1001
FT4017
transistor A431
MA3232
CA3036
UC850
DM01B
DM02B
UC340
L0NA
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transistor k1502
Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
transistor k1502
dr 25 germanium diode
DIODE 10N 40D
2N3379
CA3036
K1502
K1501
2N5513
darlington 12V 6.2A
P1029
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Germanium Power Devices
Abstract: Germanium Power Diodes 430mv germanium Germanium power Germanium Power Devices Corp
Text: GERMANIUM POWER DEVICES b3E J> m 3*147375 □□DGS'ìS ^42 • G P ß ermanium Power Devices Corp. Ge Schottky Rectifier T03 pkg 60mii pin High Reverse Energy/Ultra-Low VF GD60S20 May 1993
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GD60S20
310mv
260mv
230mv
360mv
300mv
27500ma
350ma
300ma
2000pf
Germanium Power Devices
Germanium Power Diodes
430mv
germanium
Germanium power
Germanium Power Devices Corp
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cross reference zener diodes
Abstract: germanium diodes
Text: Table of Contents Page Index / Cross Reference 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Current Limiting Diodes 135 Rectifiers 157 Bridge Rectifiers
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cross reference zener diodes
Abstract: power transistors cross reference GERMANIUM SMALL SIGNAL TRANSISTORS
Text: Table off Contents Page Index / Cross Reference 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Current Limiting Diodes 135 Rectifiers 157 Bridge Rectifiers
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Germanium Power Devices
Abstract: germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power GAV100 GAV30 Germanium
Text: GPD GAV30 GAV40 GAV100 Ge Avalanche Photodiodes OTDR Infrared Sensing Telecommunications Optical Communications Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation GAV30 GAV40 GAV100 GAV30 GAV40 GAV100 Quantum Efficiency peak 72 (80)
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GAV30
GAV40
GAV100
GAV30
GAV100
MIL-I-45208.
Germanium Power Devices
germanium power devices corporation
Germanium Power Diodes
Photodiodes Germanium PIN
Germanium power
Germanium
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cross reference zener diodes
Abstract: No abstract text available
Text: Table off Contents N Index / Cross Reference Page 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Transient Voltage Suppressors TVS 130 Current Limiting Diodes
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germanium power devices corporation
Abstract: Germanium Power Devices Germanium Power Diodes GAV30 GAV300 GAV60 MIL-45208 GAV100 TO46 germanium photodiode PIN
Text: GAV30 GAV60 GAV100 GAV300 OPTOELECTRONIC PRODUCTS Ge Avalanche Photodiodes •OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation • 3147375 DODDbSl ST 1 ■
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GAV30
GAV60
GAV100
GAV300
GAV60
germanium power devices corporation
Germanium Power Devices
Germanium Power Diodes
GAV300
MIL-45208
TO46
germanium photodiode PIN
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Untitled
Abstract: No abstract text available
Text: Table of Contents Page Index / Cross Reference 1 Small Signal Transistors 53 Power Transistors 81 Junction FETs 97 Silicon Diodes 101 Germanium Diodes 105 Zener Diodes 107 Transient Voltage Suppressors TVS 119 Current Limiting Diodes 125 Rectifiers 147 Chip Form For Hybrid Applications
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