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    2N1183B Search Results

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    2N1183B Price and Stock

    Susumu Co Ltd RG2012N-1183-B-T1

    RES SMD 118K OHM 0.1% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-1183-B-T1 Reel 1,000
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    • 1000 $0.18617
    • 10000 $0.18617
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    Mouser Electronics RG2012N-1183-B-T1
    • 1 $0.64
    • 10 $0.452
    • 100 $0.306
    • 1000 $0.2
    • 10000 $0.184
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    Susumu Co Ltd RG2012N-1183-B-T5

    RES SMD 118K OHM 0.1% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-1183-B-T5 Reel 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.19051
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    Mouser Electronics RG2012N-1183-B-T5
    • 1 -
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    • 10000 $0.186
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    RCA 2N1183B

    Bipolar Junction Transistor, PNP Type, TO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N1183B 1
    • 1 $9.63
    • 10 $6.42
    • 100 $6.42
    • 1000 $6.42
    • 10000 $6.42
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    STE 2N1183B

    Bipolar Junction Transistor, PNP Type, TO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N1183B 39
    • 1 $9.63
    • 10 $4.815
    • 100 $4.815
    • 1000 $4.815
    • 10000 $4.815
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    GPD Optoelectronics Corp 2N1183BJAN

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N1183BJAN 150
    • 1 $58.8396
    • 10 $58.8396
    • 100 $47.0717
    • 1000 $45.6007
    • 10000 $45.6007
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    2N1183B Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N1183B Defense Supply Center Columbus PNP Germanium Transistors Scan PDF
    2N1183B Diode Transistor Germanium Power Transistors Scan PDF
    2N1183B Diode Transistor Transistor Selection Guide Scan PDF
    2N1183B Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1183B Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1183B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1183B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1183B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1183B Unknown Vintage Transistor Datasheets Scan PDF
    2N1183B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1183B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1183B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1183B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1183B Unknown GE Transistor Specifications Scan PDF
    2N1183B RCA RCA Transistor and Diode Data Scan PDF
    2N1183B Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF

    2N1183B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1183B

    Abstract: No abstract text available
    Text: 2N1183B Ge PNP Power BJT 19.98 Transistors Bipolar Germanium PNP Power Transist. Page 1 of 1 Enter Your Part # Home Part Number: 2N1183B Online Store 2N1183B Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    PDF 2N1183B 2N1183B com/2n1183b

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    Abstract: No abstract text available
    Text: 2N1183B Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1183B Freq500kÂ

    Untitled

    Abstract: No abstract text available
    Text: 2N1183B+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1183B Freq500kÂ

    2N1152

    Abstract: 2N1149 2N1150 2N1151 2N1265 2N1193 2N1212 RCA 2n1184a 2N1247 2N1264
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 . 30 2S01667 2S01904 2SC25620 IOC2562 IOC3299 SOT9011 SOT9011 SOT9011 ~~t:J62Y 35 40 2S01395 SML1612A SML1622A SML1632A SMl1642 SML1652 SML1662 SML7412 ~~tj:~~ 45 50 55 60 SML3402 SML3422 SML85502 SML85507


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    Bendix Transistors

    Abstract: 2N1149 RCA 2n1184a 2N1152 2N1151 2N1150 RCA 2N1174 transitron Emihus 2N1193
    Text: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu


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    PDF ST3042 ST3043 3N120 3N121 2N332 2N333 2N335 2N336 2N334 2SCl16 Bendix Transistors 2N1149 RCA 2n1184a 2N1152 2N1151 2N1150 RCA 2N1174 transitron Emihus 2N1193

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    2N2067

    Abstract: 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1183 2N1184A
    Text: germanium power transistors PNP TO-8 lc M A X — hFE @ Ic / V c E Type# 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B V c e o is u s ) (Volts) 20 30 40 20 30 40 V ebo (Volts) (Min-Max @ A/V) Vbe V c E lS A T J @ Ic / Ib (V (S> A/A) 20 20 20 20 20 20 @ Ic/VcE


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    PDF 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B 2N1183 Ind50-100/3/2 2N1541S 2N15425 2N2067 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1184A

    2N158A

    Abstract: germanium NPN 2N1761 2n1218 2N2067 germanium transistors NPN TO13 MT28 2N1042 2N1044
    Text: GERMANIUM POWER TRANSISTORS h rc I c/ Y Type Number Case Type Y ebo V J'c E O d w l y AíV ce Min-Max ® A /V @ V CE @ /c //fl (V® A/A) (V@A/V) (mA®V) Po® Tc =25°C &JC (watts) r e /W ) CC) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669 2N2670


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    PDF 2N2668 MT-27 2N2669 2N2670 2N1042 MT-28 2N1043 2N158A germanium NPN 2N1761 2n1218 2N2067 germanium transistors NPN TO13 MT28 2N1044

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    2N3215

    Abstract: MT28 TO13 2n3214 Germanium power
    Text: GERMANIUM POWER DEVICES b3E ]> • 3TM7375 000057Ö Öb3 ■ G P P GERMANIUM POWER TRANSISTORS Case Type Type Number V e to irui V hFE IC/VCE Min-Max & A/V) Vao v VC£iJal) (V@A/A) Vie @Ic/VcE (V@A/V) IcEV @ VcE (mA @ V) P d@ Tc = 25°C 9ir TJimaxi /r


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    PDF 3TM7375 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N3215 MT28 TO13 2n3214 Germanium power

    germanium transistors NPN

    Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
    Text: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A


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    PDF 2N2668 MT-27 2N2669 2N2670 2N1042 MT-28 2N1043 germanium transistors NPN TO13 MT28 Germanium power 2N1044 2N1045 2N2556 2N2557

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    rca transistor manual

    Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
    Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N2067

    Abstract: 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A 2N1042
    Text: DI O D E T R A N S I S T O R CO INC ~flM 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC DE Ja àMfl35E D Q D O i n 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581


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    PDF 2N2668 2N2669 2N2670 2N1042 2N1043 MT-27 MT-28 MT-28 2N2067 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    2n3215

    Abstract: TO13 MT28 diode e 2060 2n2284 2N1042 2N1043 2N1044 2N1045 2N2556
    Text: DI O D E T R A N S I S T O R CO INC ~flM DE Ja àMfl35E D Q D O i n 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581


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    PDF 2N2668 2N2669 2N2670 2N1042 2N1043 MT-27 MT-28 MT-28 2n3215 TO13 MT28 diode e 2060 2n2284 2N1044 2N1045 2N2556

    2N206

    Abstract: 2N2556 2N2282 TO13 germanium transistors NPN MT28 2N10 2N2067 2N1042 2N1043
    Text: GERMANIUM POWER TRANSISTORS h rc I c / Y ce Type Number Case Type J'c E O d w l Y ebo V y AíV K « Min-Max ® A /V @/c//fl (V® A/A) @ V CE (V@A/V) (mA@V) P d@ Tc =25°C &JC (watts) r e /W ) r e ) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669


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    PDF 2N2668 MT-27 2N2669 2N2670 2N1042 MT-28 2N1043 2N206 2N2556 2N2282 TO13 germanium transistors NPN MT28 2N10 2N2067