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    GERMANIUM POWER DEVICES CORP Search Results

    GERMANIUM POWER DEVICES CORP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    GERMANIUM POWER DEVICES CORP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N3716

    Abstract: diode germanium tu 38 f 1N3717 1N3714 1N3712 IN3712 diode germanium tu 38 e 1n3719 1N3715 1N3713
    Text: Germanium Power Devices Corp. 1N3712-20 1H3713-21 4 Tunnel Diodes Specifications IN3712 through 1N3720 and 1N3713 through 1N3721 are Germanium Tunnel Diodes offering peak currents of 1.0, 2.2, 4.7,10, and 22 ma. These devices, which make use of the quantum mechanical tunneling phenom­


    OCR Scan     		1N3712-20 1H3713-21 IN3712 1N3720 1N3713 1N3721 1N37131N3721 1N3721 3S47375 000073S 1N3716 diode germanium tu 38 f 1N3717 1N3714 1N3712 diode germanium tu 38 e 1n3719 1N3715 PDF

    Germanium Power Diodes

    Abstract: BD3 tunnel diode Germanium Power Devices
    Text: Germanium Power Devices Corp. r— rr— r - - -— :- Specifications BACK DIODES BDl, 2, 3, 4, 5, 6 & 7 are germanium back diodes which make use of the quantum mechanical tunneling phenomenon, thereby attaining a very low forward voltage


    OCR Scan     		350mv) Germanium Power Diodes BD3 tunnel diode Germanium Power Devices PDF

    Germanium Power Devices

    Abstract: Germanium Power Diodes 430mv germanium Germanium power Germanium Power Devices Corp
    Text: GERMANIUM POWER DEVICES b3E J> m 3*147375 □□DGS'ìS ^42 • G P ß ermanium Power Devices Corp. Ge Schottky Rectifier T03 pkg 60mii pin High Reverse Energy/Ultra-Low VF GD60S20 May 1993


    OCR Scan     		GD60S20 310mv 260mv 230mv 360mv 300mv 27500ma 350ma 300ma 2000pf Germanium Power Devices Germanium Power Diodes 430mv germanium Germanium power Germanium Power Devices Corp PDF

    germanium transistors NPN

    Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
    Text: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A


    OCR Scan     		2N2668 MT-27 2N2669 2N2670 2N1042 MT-28 2N1043 germanium transistors NPN TO13 MT28 Germanium power 2N1044 2N1045 2N2556 2N2557 PDF

    Germanium Power Devices

    Abstract: germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power GAV100 GAV30 Germanium
    Text: GPD GAV30 GAV40 GAV100 Ge Avalanche Photodiodes OTDR Infrared Sensing Telecommunications Optical Communications Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation GAV30 GAV40 GAV100 GAV30 GAV40 GAV100 Quantum Efficiency peak 72 (80)


    OCR Scan     		GAV30 GAV40 GAV100 GAV30 GAV100 MIL-I-45208. Germanium Power Devices germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power Germanium PDF

    applications of ujt with circuits

    Abstract: UJT 2N491 applications of ujt UJT specification ujt firing circuits of scr ujt transistor 2N489 UJT 2N492 Germanium Power Devices TRANSISTOR 2N492
    Text: Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR Specifications S IÚCON TYPES I Silicon Unijunction T ra n ­ sistors are three-term inal devices having a stable “ N ” type negative resistance characteristic over a wide tem perature range. A stable peak point


    OCR Scan     		3T47375 506-475-5982---fax applications of ujt with circuits UJT 2N491 applications of ujt UJT specification ujt firing circuits of scr ujt transistor 2N489 UJT 2N492 Germanium Power Devices TRANSISTOR 2N492 PDF

    germanium power devices corporation

    Abstract: Germanium Power Devices Germanium Power Diodes GAV30 GAV300 GAV60 MIL-45208 GAV100 TO46 germanium photodiode PIN
    Text: GAV30 GAV60 GAV100 GAV300 OPTOELECTRONIC PRODUCTS Ge Avalanche Photodiodes •OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation • 3147375 DODDbSl ST 1 ■


    OCR Scan     		GAV30 GAV60 GAV100 GAV300 GAV60 germanium power devices corporation Germanium Power Devices Germanium Power Diodes GAV300 MIL-45208 TO46 germanium photodiode PIN PDF

    400Amp

    Abstract: G400S10M G400S15M Germanium power
    Text: GERMANIUM POWER DEVICES 31E D ERMANIUM • 0000550 3 ■ G P D 'T-Z'b-W POWER DEVICES CORP. Ge Schottky Hi-Current Module High Reverse Energy/Ultra Low Vp Preliminary Specs G400S15M 400amp 15 volts G400S10M (400amp 10 volts) Maximum Ratings: IF (av) Max. average forward current;. , , per device _400 amps


    OCR Scan     		G400S15M 400amp G400S10M G400S10M G400S15M Germanium power PDF

    Germanium Power Diodes

    Abstract: germanium rectifier diode 1000 WATT smps G600R15 Germanium Power Devices germanium germanium diodes forward drop 12 v smps 5 amps 300 WATT smps Germanium Schottky diode
    Text: GERMANIUM POUER DEVICES b3E D • 3TM737S 00005'n 5TB ■ £PD w m Ulermanium Power Devices Corp. G 6 0 0 R 1 5 Ge High Current Fast Recovery Rectifier Ultra-Low Vp & Thermal Impedance MAXIMUM RATINGS: 600A IF avg Average forward current rectangular waveform


    OCR Scan     		G600R15 455mv 400mv Germanium Power Diodes germanium rectifier diode 1000 WATT smps G600R15 Germanium Power Devices germanium germanium diodes forward drop 12 v smps 5 amps 300 WATT smps Germanium Schottky diode PDF

    2N489

    Abstract: 2N494 2N489A 2N34 TRANSISTOR 2N492 2N491A Germanium power
    Text: Germanium Power Devices Corp Specifications SILICON UNIJUNCTION TRANSISTOR SIÚCON TYPES 2N489.A.B I Silicon Unijunction T ra n ­ sistors are three-term inal devices having a stable “ X ” type negative resistance characteristic over a wide tem perature range. A stable peak point


    OCR Scan     		PDF

    Germanium Power Diodes

    Abstract: T-75 A HIGH VOLTAGE DIODES Germanium power 490mV Germanium Power Devices G40S20 430mv germanium
    Text: G Germanium Power Devices Corporation * Ge Schottky Rectifier D05 High Reverse Energy/Ultra-Low Vp G40S20 PRELIMINARY SPECIFICATIONS MAXIMUM RATINGS: IF avg Average forward current rectangular waveform 40 A IFM Peak rectified forward current 50%duty cycle


    OCR Scan     		G40S20 300usec 400mv 340mv 310mv 450mv 390mv 360mv 490mv 430mv Germanium Power Diodes T-75 A HIGH VOLTAGE DIODES Germanium power Germanium Power Devices G40S20 germanium PDF

    germanium power devices corporation

    Abstract: GM8HS InGaas PIN photodiode, 1550 NEP Germanium power diode germanium catalog GM7VHR gep800 ingaas apd photodetector GM2HS GM10HS
    Text: Small & Large Area pn, pin Two-Color Detector OPTOELECTRONIC PRODUCTS Ge Photodetectors • Large and Small Area • Wide Performance Range • TE Coolers and Dewars Available Germanium Power Devices Corporation GPDOS00004 G Introduction/Glossary of Terms


    OCR Scan     		GPDOS00004 MIL-45208 MIL-S-19500 MIL-S-19500. MIL-STD-883, germanium power devices corporation GM8HS InGaas PIN photodiode, 1550 NEP Germanium power diode germanium catalog GM7VHR gep800 ingaas apd photodetector GM2HS GM10HS PDF

    germanium power devices corporation

    Abstract: G15S20 3T47375 Germanium Power Devices 400AMPS Germanium power
    Text: 3T47375 G0G0731 b=î4 l ü l Germanium Power Devices Corporation G -« *. High Reverse Énergy/Ultra-Low Vp G 15S 20 PRELIMINARY SPECIFICATIONS M k t,. ^ "*Ls°U J î 5 S ^ ! i _ | MAXIMUM RATINGS: IF avg


    OCR Scan     		3T47375 G0G0731 300psec 305mv 350mv 390mv 440mv 240mv 290mv germanium power devices corporation G15S20 3T47375 Germanium Power Devices 400AMPS Germanium power PDF

    1671B

    Abstract: 2N1671 scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C
    Text: Germanium Power Devices Corp. SILICON UNIJUNCTION TRANSISTOR The| GPJ3 Unijunction Transistor is a three terminal device having a stable “N ” type negative resistance charac­ teristic over a wide temperature range. A stable peak point voltage, a low peak point


    OCR Scan     		2N1671 2N1671-2N1671A) 2N1671B) 314737S 1671B scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C PDF

    2m137

    Abstract: 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A
    Text: IN TEX/ SEMITRONICS CORP E 7E D • 4fibei a 4fa GGOQETe T -Z 7 -O I 1 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ; Trinsittdt: Polarity ■mm.-: im* i Maximum Miximum V Typical Giln HFE Power (W) VCB


    OCR Scan     		ci24t N1086 J2N1087 2N169 S50I6Ã 2m137 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A PDF

    2N1671B

    Abstract: 2N1671 2N1671A 160 germanium transistor 2N1671-2N1671A 2N1671C Germanium Power Devices 029T UJ-01 2NI67
    Text: Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR The| G PD • Unijunction T ran sistor is a three term inal device having a stable “N ” type negative resistance ch arac­ teristic over a wide tem perature range. A stable peak point voltage, a low peak point


    OCR Scan     		2N1671 2N1671A 2N1671-2N1671A) 2N1671B) 3CI47375 G000742 2N1671B 160 germanium transistor 2N1671-2N1671A 2N1671C Germanium Power Devices 029T UJ-01 2NI67 PDF

    2N19A

    Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924
    Text: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^


    OCR Scan     		2K43A 2N44A 2Nto37 2N18M 2N109? 2N169 2N3427 2N662 2N1008 2N1008B 2N19A 2N1310 2n1408 2N1305 2N1100 2N404 transistor npn germanium 2N1378 2N1924 PDF

    Germanium Power Devices

    Abstract: G30S20 germanium Germanium power
    Text: G E R M A N I U M PO WER D E V I C E S b3E D • 3=147375 O G O G S ^ ? 71S ■ 6 P » ES ermanium Power Devices Corp. Ge Schottky Rectifier D04 pkg High Reverse Energy/Ultra-Low Vp Type # G30S20 May 1993 MAXIMUM RATINGS: IF avg IFM IFSM VRWM R0jc Tj IRRM


    OCR Scan     		G30S20 300psec 310mv 350mv 1500pf 70nsec Germanium Power Devices G30S20 germanium Germanium power PDF

    GM10HS

    Abstract: GM10HSCS GM6VHR GM7HS GM8HS GEP600 GEP800 GPD GM10BNC GEP700 GM2HS
    Text: Small & Large Area pn, pin detectors Two-color detectors GPD OPTOELECTRONICS CORP. Germanium Photodetectors • Large and Small Area • Wide Performance Range • TE Coolers and Dewars Available • Filtered Windows for High Power Available • Standard and Custom Packages/Submounts


    Original     		MIL-I-45208. GR-468-CORE) MIL-STD-883 GM10HS GM10HSCS GM6VHR GM7HS GM8HS GEP600 GEP800 GPD GM10BNC GEP700 GM2HS PDF

    Untitled

    Abstract: No abstract text available
    Text: Small & Large Area pn, pin Two-Color Detector OPTOELECTRONIC PRODUCTS Ge Photodetectors • Large and Small Area • Wide Performance Range • TE Coolers and Dewars Available GPD Optoelectronics Corp. GPDO S00007 Introduction/Glossary of Jerms G Introduction


    OCR Scan     		S00007 MIL-l-45208. GR-468-CORE, MIL-STD-883 PDF

    2n2153

    Abstract: 2N2152 2N1522 TO41 germanium power transistors TO36 germanium PNP 2N1167 2N2287 2N1163
    Text: GERMANIUM POWER TRANSISTORS CURRENT G A IN Type Number Case Type YCBO V V e to V V,.o V V c t, V Vca V h FE Min. YcE Max. V Ic A SA TVRA TION VOL TA GES Yc£Ij Y 11f . . / c @ Ib V V A A 0,-C "C /W 25 AMP GERMANIUM PNP Cont.) 2NI162A 2N1163 2N1163A 2N1164


    OCR Scan     		2N1162A 2N1163 2N1163A 2N1164 2N1164A 2N1165 2N1165A 2N1166 2N11T-36 8-32NC-2A 2n2153 2N2152 2N1522 TO41 germanium power transistors TO36 germanium PNP 2N1167 2N2287 PDF

    2N3614

    Abstract: 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900
    Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Y CBO V 2N1137B 2N1138 2N1138A 2N1138B TO-3 TO-3 TO-3 TO-3 100 60 90 100 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1021 2N1021A 2N1022


    OCR Scan     		2N1137B 2N1138 2N1138A 2N1138B 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N3614 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BGT24MR2 VQFN32-9 BGT24MR2 VQFN32-9-PO VQFN32-9 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1989963 CENTRAL SEMICONDUCTOR TE 92D 0 0 414 ]>E|nflnt3 DGDDMm eswfie&fi I. D 'f- 0 -o 7 5 " e@Ep. Central 1N771, A 1N772, A ssmiœndustor Corp. Central Semiconductor Corp. Central Semiconductor Corp. 1N 77 3, A . 1N77^t* A 1N775 GERMANIUM DIODE JEDEC D0-7 CASE


    OCR Scan     		1N771, 1N772, 1N775 1N771 1N771 10mW/10Â 1N771A 1N772 1N772A 1N773 PDF