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    2N1022 Search Results

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    2N1022 Price and Stock

    Susumu Co Ltd RG2012N-1022-D-T5

    RES SMD 10.2K OHM 0.5% 1/8W 0805
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    Susumu Co Ltd RG2012N-1022-B-T5

    RES SMD 10.2K OHM 0.1% 1/8W 0805
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    Susumu Co Ltd RG2012N-1022-C-T5

    RES SMD 10.2KOHM 0.25% 1/8W 0805
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    Susumu Co Ltd RG2012N-1022-B-T1

    RES SMD 10.2K OHM 0.1% 1/8W 0805
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    Susumu Co Ltd RG2012N-1022-W-T1

    RES SMD 10.2KOHM 0.05% 1/8W 0805
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    Newark RG2012N-1022-W-T1 Reel 1,000
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    2N1022 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1022 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1022 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1022 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1022 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1022 Unknown GE Transistor Specifications Scan PDF
    2N1022 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1022 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1022 Unknown Vintage Transistor Datasheets Scan PDF
    2N1022 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N1022 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1022 Semitron Germanium Power Transistors Scan PDF
    2N1022 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N1022 Texas Instruments Semiconductor and Components Data Book 1967/8 Scan PDF
    2N1022A Defense Supply Center Columbus Military Spec Transistors, PNP Germanium, High Power Original PDF
    2N1022A Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1022A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1022A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1022A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1022A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1022A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2N1022 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1022 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)120º V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)700u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)5.0


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    2N1022 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1022A Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)120º V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)5.0


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    2N1022A Freq200k PDF

    N511A

    Abstract: 2N458 2N5156 2N1160 2N4243 2N1021A 2N458A Germanium power 2N1147
    Text: germanium power transistors 149 See Pg. 147 for outline dra!Ni~g_ ~ ._ .~~ . _ . I • PNP ALLOY TRANSISTORS S.O Amp I BREAKDOWN VOLTAGES I I I I TYPE NUMBER VCB 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N1021 2N1021A 2N1022 2N1022A


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    2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N1021 N511A 2N5156 2N1160 2N4243 2N1021A Germanium power 2N1147 PDF

    2N1021

    Abstract: 2N1021A 2N1022 2N1022A
    Text: ., <Jnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA germanium power transistors PNP TO-3 (cont'd) Type* 2N456A 2N456B 2N457A 2N457B 2N458A 2N458B 2N1021A 2N1022A 2N627 2N628 2N629 2N1549&#39; 2N1550&#39;


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    2N456A 2N456B 2N457A 2N457B 2N458A 2N458B 2N1021A 2N1022A 2N627 2N628 2N1021 2N1021A 2N1022 2N1022A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1022A+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V)120º V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)5.0


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    2N1022A Freq200k PDF

    ASZ16

    Abstract: asz1015 AL103 AD143 2N3611 PNP Germanium ASZ17 2SB407 2SB40 MP2062 ASZ15
    Text: POWER GERMANIUM TRANSISTORS Item Number >C Part Number Manufacturer Type Max V BR CEO (A) Of) PD Max hre *T ON) Min (HZ) Max km Max (A) (8) ICBO r (CE)Mt Max (Ohms) T Oper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 ASZ1015 AUY30 AUY28 AUY28


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    ASZ1015 AUY30 AUY28 2SB342 AL102 AL103 ASZ16 AD143 2N3611 PNP Germanium ASZ17 2SB407 2SB40 MP2062 ASZ15 PDF

    2N458B

    Abstract: 2N1022A 2N4588 transistor ba 752 2N1021A 2N456B 2H102 Transistor BC 227 Germanium Transistor Germanium power
    Text: TYPES 2N456B, 2N457B, 2N458B, 2N1021A AND 2N1022A P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS Military and Industrial Applications mechanical data The use of silver a llo y to assem ble the mounting b ase a n d the use of resistance w elding to seal the can ,


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    2N456B, 2N457B, 2N458B, 2N1021A 2N1022A 2N45M, 2N1021A, 2N1022A 2N458B 2N4588 transistor ba 752 2N456B 2H102 Transistor BC 227 Germanium Transistor Germanium power PDF

    2N3614

    Abstract: 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900
    Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Y CBO V 2N1137B 2N1138 2N1138A 2N1138B TO-3 TO-3 TO-3 TO-3 100 60 90 100 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1021 2N1021A 2N1022


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    2N1137B 2N1138 2N1138A 2N1138B 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N3614 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900 PDF

    2N458B

    Abstract: 2N1021 2N1021A 2N456B 2n457a 217B 2N1022A 2N456A MIL-S-19500 FOR POWER LINE TRANSISTOR 2N457B
    Text: M IL -S-19500,'217B 17 January 1972 SUPERSEDING M IL -S -19500 217A 29 S ep tem b er 1965 MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTORS, PN P , GERMANIUM, HIGH-POW ER T Y PE S 2N456B, 2N457B, 2N458B, 2N1021A, 2N1022A T h is sp e c ific a tio n is m a n d ato ry fo r u se by a ll D e p a rt­


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    MIL-S-19500, MIL-S-19500 2N456B, 2N457B, 2N458B, 2N1021A, 2N1022A 2N456B 2N457B 2N458B 2N1021 2N1021A 2n457a 217B 2N1022A 2N456A MIL-S-19500 FOR POWER LINE TRANSISTOR PDF

    2N1143

    Abstract: 2N1142 TI3030 TI3028 2N1141 TI3027 TI3031 2N458A germanium transistors PNP 2N455A
    Text: Germanium Transistors Type Case C o Maxim um R atings at 25°C amb. C haracteristics S P E C IA L 11 No. « a> o » O FE A TU R ES A - > ,- V CB V CE V EB V V V •c A Ptot W fc A h FE a Min. fT Max. V C E (S A T A -1 r 1-


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    2N524 2N525 2N526 2N527 2N1141 2N1142 2N1143 2N456A TI3030 TI3031 TI3028 TI3027 2N458A germanium transistors PNP 2N455A PDF

    2N1203

    Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
    Text: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation


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    2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N1203 pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N511 PDF

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 PDF

    2N1384

    Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
    Text: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP


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    2N974 2N1031A 2N1117 2N975 2N1032 2N1118 2N976 2N1034 2N1119 2N980 2N1384 2N993 2N1516 2N1151 2N1378 2N1036 2N1150 2N1037 2N1046 PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    germanium transistors NPN

    Abstract: 2n1549 2N627 2N456A 2n1162 2N1560 germanium 2N458A 2n1291 2N1295
    Text: germanium power transistors PNP TO-3 cont’d Type# = 3 to 25A Iife @ Ic / V c E NPN Comple­ VcEO(SUS) V ebo (Volts) (Volts) ment (Min-Max @ A/V) VcE(SAT) @ Ic/ I b Pd @ = 25°C Û JC (Watts) (°C/W) (V @ A/A) V be @ Ic/V cE (V @ A/V) (mA @ 1.5@5/1.5 1.5@5/1.5


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    2N456A 2N456B 2N457A 2N457B 2N458A 2N458B 2NX021A 2N1022A 2N1218 2N1292 germanium transistors NPN 2n1549 2N627 2n1162 2N1560 germanium 2n1291 2N1295 PDF

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    2N3614

    Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
    Text: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation


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    2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N3614 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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