germanium photodiode PIN
Abstract: foto transistor SFH231 photodiode germanium diode germanium germanium diode germanium diodes IR DETECTOR photodiode 1550 NEP 1800nm
Text: SFH 231 SFH 231 fmo06424 Germanium-PIN-Fotodiode Germanium PIN Photodiode Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 600 nm bis 1800 nm ● Kurze Schaltzeit typ. 9 ns
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fmo06424
Bestelln13
germanium photodiode PIN
foto transistor
SFH231
photodiode germanium
diode germanium
germanium diode
germanium diodes
IR DETECTOR
photodiode 1550 NEP
1800nm
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GM10HS
Abstract: GM7HS GM8HS GM5HS GM7VHR gm8VHR GM6VHS GM5VHR GM6VHR GM7HS datasheet
Text: Germanium Photodetector Large Area Ge. Photodiodes Home Products Response Table Special Options: ● ● ● Thermal-Electric Coolers Active Mounts /Ceramic Substrates Neutral Density Filters ● ● ● Custom Devices and Packaging Two-Colors Amplified Devices
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180htm
GM10HS
20photodiode
20spec2
GM10HS
GM7HS
GM8HS
GM5HS
GM7VHR
gm8VHR
GM6VHS
GM5VHR
GM6VHR
GM7HS datasheet
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GM7VHR
Abstract: No abstract text available
Text: Germanium Photodetector Large Area Ge. Photodiodes Special Options: ● Thermal-Electric Coolers ● Custom Devices and Packaging ● Active Mounts /Ceramic Substrates ● Two-Colors ● Neutral Density Filters ● Amplified Devices Electrical Characteristics @ 25°C
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GM10HS
20photodiode
20spec2
GM7VHR
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IGA-010
Abstract: G-010 S-010 S-025 S-050 S-050UV IGA-030 IGA-010 detector g030 TO5 packages
Text: Detector Components EOS offers a line of Silicon, Germanium, Indium Gallium Arsenide, and Indium Gallium Arsenide Antimonide photodiodes for use in the 0.3 µm to 2.4 µm spectrum. Material Si Ge InGaAs InGaAsSb Diodes operating at room temperature or TE cooled
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100Hz
S-010
S-010/TE2
IGA-030
2010/TE2
T0-18
IGA-030/TE2
IGA-020
G-020
IGA-010
G-010
S-010
S-025
S-050
S-050UV
IGA-030
IGA-010 detector
g030
TO5 packages
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photodiode array 1550 nm
Abstract: Photodiode Array 32 element
Text: ^^ E G zG JU D SO N Parallel Output Germanium Arrays 0.8 to 1.8 jam Description Applications Standard packaging and element configurations result in low cost and quick delivery for J16P Series highquality Germanium photodiode arrays. The 16-element and 32-element linear
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16-element
32-element
1550-nm
J16P-40P-S01
16E-SC
J16P-40P-500Ux1M
32E-SC
3030fc
photodiode array 1550 nm
Photodiode Array 32 element
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L1116
Abstract: RCA photomultiplier Bi4Ge3012 photodiode germanium scintillator photodiode Avalanche photodiode APD 137CS RCA Solid State amplifier C30994E photodiode Avalanche photodiode
Text: E ELECTRO OPTICS IDE D H 3A741S4 ODDDD4fl T • GEEO C30994E Solid State Gamma-Ray Detector 7 -7 ^ 7 Developmental Type Silicon Avalanche Photodiodes Coupled to Bismuth Germanium Oxide Bi4Ge3012 Scintillators RCA Developmental type C3Q994E con sists of tw o Bismuth Germanium Oxide
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C30994E
Bi4Ge3012)
C3Q994E
Wh514)
L1116
RCA photomultiplier
Bi4Ge3012
photodiode germanium
scintillator
photodiode Avalanche photodiode APD
137CS
RCA Solid State amplifier
photodiode Avalanche photodiode
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J16-5SP-R02M-SC
Abstract: J16-8SP-R05M GE PHOTODIODE J16-18A-R01M-SC J16P1R10M J16-5SP-R03M-HS J16-5SP-R03M-SC judson germanium photodiode J16-8SP-R05M-SC J16-18A-R01M
Text: E G 8c G JUDSON BTE J> J 16 Series 3CI30bD5 D0DDS13 JUD 4 T - H t - H l Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.
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3CI30bD5
D0DDS13
J16TE2
1550nm.
3G30L
000021L.
J16-5SP-R02M-SC
J16-8SP-R05M
GE PHOTODIODE
J16-18A-R01M-SC
J16P1R10M
J16-5SP-R03M-HS
J16-5SP-R03M-SC
judson germanium photodiode
J16-8SP-R05M-SC
J16-18A-R01M
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low dark current APD
Abstract: photodiode germanium photodiode 011 APD 10ghz
Text: GERMANIUM AVALANCHE PHOTODIODE FPD13P12JX DESCRIPTION The FPD13P12JX is a germanium avalanche photodiode APD w ith a m ultim ode fiber pigtail designed fo r use in a local area network and sub scriber loop applications. The APD chip has a photosensitive area diameter
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FPD13P12JX
FPD13P12JX
100/im
low dark current APD
photodiode germanium
photodiode 011
APD 10ghz
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PDF
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J16D
Abstract: J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM
Text: E G I 8c G JUDSON 3TE D • 30BGb05 000DE13 4 *JUD ^ T -V /-V / J IO Series Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.
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30BGb05
000DE13
J16TE2
11-mission.
3030L
000D21L,
J16D
J161
germanium diode equivalent
GE PHOTODIODE
J16-18A-R01M-HS
J16-5SP-R03M-HS
103 SRM
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FPD13R12JY
Abstract: No abstract text available
Text: GERMANIUM AVALANCHE PHOTODIODE FPD13R12JY DESCRIPTION The FPD13R12JY is a germanium avalanche photodiode APD w ith a m ultim ode fiber pigrail designed fo r use in a local area network and sub scriber loop applications. It is also applicable in a high-bit-rate optical
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FPD13R12JY
FPD13R12JY
100jum
37MT75b
37MT7Sb
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040THICK
Abstract: No abstract text available
Text: n Silicon/Germanium "Sandwich" Detectors 0.4 to 1.8 jim Figure 8-1 Typical Responsivity for J16Si Series Description The J16Si Series two-color detector consists of a high-performance Silicon detector mounted in a "sandwich" configuration over a Germanium detec
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J16Si
800nm
1300nm
300Hz
-5A4-R02M
-8A4-R02M
-8A4-R05M
040THICK
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germanium photodiode
Abstract: photodiode germanium Ford Aerospace a 6151 germanium diode L4521 Germanium mesa
Text: 3667320 FORD FORD AEROSP- , AEROSP. 97D AERONUTRONIC AERONUTRONIC T? 00452 DE J 3 t b 7 3 2 0 00DG452 1 GERMANIUM PHOTODIODE ^ ^ ^ ^ | F o r d Aerospace & ^^vt^pCom m unicationsGorporation L iË C T R O -O P T IC A L$DEVJC E S L4S21 DESCRIPTION The L4521 germanium photodiode is designed for use as a laser detecting device
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L4521
L4521
germanium photodiode
photodiode germanium
Ford Aerospace
a 6151
germanium diode
Germanium mesa
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germanium photodiode PIN
Abstract: SIEMENS Germanium
Text: SIEMENS Germanium-PIN-Fotodiode Germanium PIN Photodiode SFH 231 r , C a t h o d e SFH 4 8 0 p o s it io n (2.7) (SFH 2 1 6 , SFH 2 31 , 5FH 4 0 0 ) 00.45 Radiant Sen sit ive a re a \ N'<>> / * y/ I.“ 03 u5 _ 5.3, ’ 5.0 I 14.5 12.5 7-4 6.6 Approx. w e ig h t
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germanium photodiode PIN
Abstract: pin photodiode 1550 sensitivity photodiode PIN 1300 sensitivity pin Photodiode 1300 nm Germanium power t2856
Text: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Tab at Package Bottom Operating and Storage Temperature Range T0P, Tstg .-40" to +80“C Reverse Voltage (VR) .15V
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germanium power devices corporation
Abstract: Germanium Power Devices Germanium Power Diodes GAV30 GAV300 GAV60 MIL-45208 GAV100 TO46 germanium photodiode PIN
Text: GAV30 GAV60 GAV100 GAV300 OPTOELECTRONIC PRODUCTS Ge Avalanche Photodiodes •OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation • 3147375 DODDbSl ST 1 ■
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GAV30
GAV60
GAV100
GAV300
GAV60
germanium power devices corporation
Germanium Power Devices
Germanium Power Diodes
GAV300
MIL-45208
TO46
germanium photodiode PIN
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings • Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, Ts tg -4 0 “ to +80°C Reverse Voltage (VR) . 10 V
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0007fci40
--SFH233
aZ3b32b
0007fc
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APY12
Abstract: APY 12 Siemens photodiode visible light Germanium power K/HOP-1045
Text: SFH 231 SIEMENS GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom • Usage: Visible Light and Near Infrared Range * High Spectral Sensitivity ■ High Reliability * Very Short Switching Time
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1300nm,
100nA)
APY12
APY 12
Siemens photodiode visible light
Germanium power
K/HOP-1045
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16C70
Abstract: J16D thermistor inas detector inas judson PA-100 Germanium itt
Text: J16TE Thermoelectrically Cooled Germanium Detectors judson tach-nalogiea J16TE2 Series 2-Stage Thermoelectrically Cooled Ge General J16TE Series detectors are Judson's high-quality Ge photodiodes mounted on thermoelectric coolers for reduced dark current, improved sensitivity and superior
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J16TE
J16TE
J16TE2
4C-70
16C-70
32C-70
4C-60
16C-60
16C70
J16D
thermistor inas
detector inas
judson PA-100
Germanium itt
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PDF
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J16A-18A-R100U
Abstract: J16A
Text: J16A Ge Avalanche Photodiodes APDs (0.8 to 1.5 pm) judson _•!. Description Multiplication Characteristics The J16A series Germanium Ava lanche Photodiodes are designed for high-speed applications at 800 and 1300 nm. Judson APDs offer low dark currents
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OCR Scan
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1300nm
J16A-FC1-R50U
100pm
J16A-18A-R100U
J16A
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FPD13R51KS
Abstract: No abstract text available
Text: DESCRIPTION The FPD13R51KS is a Germanium Avalanche Photodiode APD with a multimode fiber pigtail designed for use in optical transmission systems operating at high-bit-rates and over long distances. The 50Mm photosensitive diameter is optimized to achieve both higher
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FPD13R51KS
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Photodiode Array 32 element
Abstract: No abstract text available
Text: E G & G JUDSON 3TE ^ N O C I U Q r D • 30BDb0S 00D0222 S ■ JU1 - -r-wss Parallel Output Germanium Arrays Series Description Applications Standard packaging and element
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30BDb0S
00D0222
16-element
32-element
16element
500Ux1M
500UX1
Photodiode Array 32 element
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PDF
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Untitled
Abstract: No abstract text available
Text: bDE D • flEBSbOS D04b727 DIT « S I E G SIEMENS AKT IENGESELLSCHAF SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, T3Te Reverse Voltage (VR) Power Dissipation (PTO t )
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D04b727
1100ction
A23SbDS
0G4b72Ã
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quadrant detector
Abstract: detector active area size nep J16QUAD-8D6-R05M-HS
Text: J16PS Room Temperature Germanium Position Sensors j udson Figure 35-2 Example of Position Linearity • J16PS P osition S ensors A Ge position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y beam position
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J16PS
quadrant detector
detector active area size nep
J16QUAD-8D6-R05M-HS
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germanium power devices corporation
Abstract: GM8HS InGaas PIN photodiode, 1550 NEP Germanium power diode germanium catalog GM7VHR gep800 ingaas apd photodetector GM2HS GM10HS
Text: Small & Large Area pn, pin Two-Color Detector OPTOELECTRONIC PRODUCTS Ge Photodetectors • Large and Small Area • Wide Performance Range • TE Coolers and Dewars Available Germanium Power Devices Corporation GPDOS00004 G Introduction/Glossary of Terms
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GPDOS00004
MIL-45208
MIL-S-19500
MIL-S-19500.
MIL-STD-883,
germanium power devices corporation
GM8HS
InGaas PIN photodiode, 1550 NEP
Germanium power
diode germanium catalog
GM7VHR
gep800
ingaas apd photodetector
GM2HS
GM10HS
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PDF
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