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    3030FC Search Results

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    3030FC Price and Stock

    Micro Commercial Components MBR3030FCT-BP

    DIODE ARR SCHOT 30V 30A ITO220AB
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    DigiKey MBR3030FCT-BP Bulk
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    PanJit Group SB3030FCT_T0_00001

    SCHOTTKY BARRIER RECTIFIER
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    DigiKey SB3030FCT_T0_00001 Tube 58,000
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    Ozdisan Elektronik SB3030FCT_T0_00001
    • 1 $0.92138
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    PanJit Semiconductor SB3030FCT_T0_00001

    Schottky Diodes & Rectifiers 30V,Schottky,ITO-220AB,30A
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    Mouser Electronics SB3030FCT_T0_00001
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    NAC SB3030FCT_T0_00001 58,000
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    Eaton Cutler-Hammer R4H3030FCCSN

    H-Frame, Cc Fusible Rotary Sw/Neutral; No. Of Poles:3 Pole; Contact Voltage Ac Max:600V; Contact Current Ac Max:30A; Product Range:- Rohs Compliant: No |Eaton Cutler Hammer R4H3030FCCSN
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    Newark R4H3030FCCSN Bulk 9 1
    • 1 $553.98
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    Eaton Cutler-Hammer R4H3030FCC

    H-Frame, Cc Fusible Rotary Disc, 3P, 600V, 30A; No. Of Poles:3 Pole; Contact Voltage Ac Max:600V; Contact Current Ac Max:30A; Ip/Nema Rating:-; Switch Disconnector Terminal Style:Screw; Switch Disconnector Mountng Type:Panel Mount Rohs Compliant: No |Eaton Cutler Hammer R4H3030FCC
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    Newark R4H3030FCC Bulk 2 1
    • 1 $510.57
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    • 100 $460.37
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    3030FC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SBL3020FCT SBL3045FCT 30A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability


    Original
    PDF SBL3020FCT SBL3045FCT ITO-220 ITO-220, MIL-STD-202,

    SB3060fct

    Abstract: 1000C ITO220AB 30100FCT
    Text: SB3020FCT thru SB30150FCT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 TO 150 VOLTS CURRENT - 30 AMPERES ITO-220AB FEATURES MECHANICAL DATA Plastic Package has Underwriters Laboratory Flammability Classification 94-0 utilizing Flame Retardant Epoxy Molding Compound


    Original
    PDF SB3020FCT SB30150FCT ITO-220AB MIL-S-19500/228 260oC/10seconds ITO220AB SB3060fct 1000C 30100FCT

    Untitled

    Abstract: No abstract text available
    Text: SB3020FCT SB30100FCT 30A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability


    Original
    PDF SB3020FCT SB30100FCT ITO-220 ITO-220, MIL-STD-202,

    VTL13D7-20

    Abstract: VTL-1307 VTL13D7 VTL1306-20 VTL13D1 VTL13D1-20 VTL13D3 VTL13D3-20 VTL13D5-20 pj 81 diode
    Text: Transmissive Optoswitch VTL13D1 - 07 Slotted Sw itch — .395 High PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches com bines an infrared emitting diode IRED with an N PN phototransistor in a one piece, sealed, IR transmitting plastic case.


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    PDF VTL13D1 VTL11 VTL13D VTL13D7-20 3030fci EJ0D15E7 VTL-1307 VTL13D7 VTL1306-20 VTL13D1-20 VTL13D3 VTL13D3-20 VTL13D5-20 pj 81 diode

    PE-0-51

    Abstract: pe182 PE-1-81 pbse PE-1-72 J14TE3 lead selenide TO-37 Scans-002681 J14TE1
    Text: J '^ .E C r G JU D S O N Description Lead Selenide Detectors 2.0 to 6.0 jam • J14TO Series The J 14 Series detectors are Lead Selenide PbSe photoconductive (PC) detectors designed for operation in the 2-6 |xm wavelength region. The wave­ length of peak response depends on the


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    PDF PE-2-73 PE-2-81 PE-2-82 PE-2-83 PE-3-31 PE-3-32 PE-3-33 260Hi 550-IÂ PE-0-51 pe182 PE-1-81 pbse PE-1-72 J14TE3 lead selenide TO-37 Scans-002681 J14TE1

    tic 1060

    Abstract: rca 923 C30895 5252 F led rca 514 5252 F 5252 S RCA 411
    Text: E G & G/CANADA/OPTOELEK BDBDbl D O O O O i n ID <123 H C A N A T-W-Si Photodiode R G i l Optics C30895 D A TA S H E ET Silicon Avalanche Photodiode Optim ized fo r High Responsivity and V e ry Lo w Noise at 1060 Nanom eters • Noise Equivalent Power NEP a t 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.


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    PDF C30895 Range--46Â C30895 ED-0028/10/88 tic 1060 rca 923 5252 F led rca 514 5252 F 5252 S RCA 411

    Untitled

    Abstract: No abstract text available
    Text: VTD206K Alternate Source/ Second Source Photodiodes SFH206K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch(mm) CASE 61 PRODUCT DESCRIPTION TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) Large area planarsilicon photodiode in a waterclear, cast epoxy sidelooker,


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    PDF VTD206K SFH206K 3030fci01

    VTL5C1

    Abstract: VTL5C3 5c4/2 vtl5 VTL5C4
    Text: V T L 5 C 3/2 , 5 C 4 /2 Dual Element LED Axial Vactrols PACKAGE DIMENSIONS inch mm .5 0 ( 1 2 . 7 ) . 3 2 0 ( 8 .1 3 ) - S ' ~l" X ^ -N O M ( 5 .0 8 ) - .3 7 0 ( 9 . 4 0 ) (0 .5 1 ) UL Listad File # 7 3 8 8 7 PLASTIC POTTING CONTOUR NOT CONTROLLED PHOTOCELL (L D R Ï


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    PDF 3030fc VTL5C1 VTL5C3 5c4/2 vtl5 VTL5C4

    SG2007A

    Abstract: SG2004A 3G30b 904nm SG2006A M9002 SG2002A SG2007 SG2010A SG2012A
    Text: E G & G/CANADA/OPTOELEK IO D • Æ M Electro ■ m m V ^ IO D t ic s 3 G 3 0 b l 0 0 0 0 0 0 7 0 2 TT ■iCAJ^IA-p.‘/ SG2000A Series GaAs Pulsed Lasers DATA SHEET 904 nm Gallium Arsenide Injection Lasers for Pulsed Operation Small Emitting Areas Variants With Reverse-Case Polarity are Available


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    PDF 3G30bl0 QD0G070 SG2000A SG2012A 42S8R6 VS-117 SG2012A SG2007A SG2004A 3G30b 904nm SG2006A M9002 SG2002A SG2007 SG2010A

    1013B

    Abstract: VTB1012B
    Text: VTB Process Photodiodes V T B 1 0 1 2 B , 1013B PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 17 Small area planar silicon photodiode in a “flat" window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes


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    PDF VTB1012B, 1013B 4x1012 B030b0T 1013B VTB1012B

    HgCdTe

    Abstract: J15TE4 J15TE3 preamp MC31G HGCDTE detector judson PA-090 EG&G PA-080 judson PA-100
    Text: E G & G JUDSON 3T E J15TE Series T> m 3D30b0S 0000237 7 M JUD Long-Wave Mercury Cadmium Telluride Detectors 10.6 |Lim T-yj-v/ General • J15TE Series "Long-Wave" detectors are photoconductive HgCdTe elements on thermoelectric coolers for C 0 2 laser detection at 10.6|am.


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    PDF 3D30b0S J15TE 100Hz 20MHz) J15TE3 J15TE4 MC31G: MC31S: HgCdTe preamp MC31G HGCDTE detector judson PA-090 EG&G PA-080 judson PA-100

    VTR17D1

    Abstract: opto-switch VTR17E1 optoswitch
    Text: Reflective Optoswitch V TR 17D1, 17E1 Arrow Retro with Flying Leads PRODUCT DESCRIPTION This series of reflective optical switches com­ bines an infrared em itting diode IRED w ith an NPN phototransistor (VTR17D1) or photodar­ lington (VTR17E1) in a one piece, sealed, IR


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    PDF VTR17D1, 3D30faCH VTR17D1 VTR17E1 VTR17E1. opto-switch optoswitch

    laser rca

    Abstract: 904nm
    Text: E 6 & G/CANADA/OPTOELEK ID D • H B ÆM Electro ■ m v V ^ IO p t ic s 3G3DblO QQQG07G 2TT ■ CANA'p.tf 1 - 0 5 ^ SG2000A Series GaAs Pulsed Lasers DATA SHEET 904 nm Gallium Arsenide Injection Lasers for Pulsed Operation Small Emitting Areas Variants With Reverse-Case Polarity are Available


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    PDF QQQG07G SG2000A SG2012A SG2001A SG2002A SG2003A SG2004A SG2005A SG2006A laser rca 904nm

    photodiode array 1550 nm

    Abstract: Photodiode Array 32 element
    Text: ^^ E G zG JU D SO N Parallel Output Germanium Arrays 0.8 to 1.8 jam Description Applications Standard packaging and element configurations result in low cost and quick delivery for J16P Series highquality Germanium photodiode arrays. The 16-element and 32-element linear


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    PDF 16-element 32-element 1550-nm J16P-40P-S01 16E-SC J16P-40P-500Ux1M 32E-SC 3030fc photodiode array 1550 nm Photodiode Array 32 element