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    GERMANIUM MIXER DIODES Search Results

    GERMANIUM MIXER DIODES Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM MIXER DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GaAs tunnel diode

    Abstract: Germanium Schottky diode tunnel diode GaAs SMGS11 germanium diode germanium diodes Microwave detector diodes SMS202
    Text: FOR IMMEDIATE RELEASE: January 11, 2010 CONTACT: Jim Godbout Aeroflex / Metelics VP Sales and Marketing 408-328-3321 James.godbout@aeroflex.com Teresa Farris Aeroflex / Metelics MARCOM Manager 719-594-8035 Teresa.farris@aeroflex.com PLASTIC SMT SCHOTTKY MIXER/DETECTOR DIODES


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    GaAs tunnel diode

    Abstract: Gallium Arsenide tunnel diode high power pin diode METELICS DETECTOR DIODE germanium diode Germanium Power Diodes tunnel diode GaAs msat-p25 Press Fit Diode Metelics
    Text: FOR IMMEDIATE RELEASE: December 1, 2009 CONTACT: Jim Godbout Aeroflex / Metelics VP Sales and Marketing 408-328-3321 James.godbout@aeroflex.com Teresa Farris Aeroflex / Metelics MARCOM Manager 719-594-8035 Teresa.farris@aeroflex.com NEW PLASTIC SURFACE MOUNT SWITCH AND ATTENUATOR DIODES


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    BGT24MTR12

    Abstract: 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9 VQFN32-9 VQFN32-9-PO 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC

    T0825

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9 VQFN32-9 VQFN32-9-PO T0825

    BGT24MTR11

    Abstract: B7HF200 sun resistor 400 mohm 24 GHz transceiver VQFN32-9 IFX VQFN32
    Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.3, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BGT24MTR11 VQFN32-9 BGT24MTR11 VQFN32-9-PO VQFN32-9 B7HF200 sun resistor 400 mohm 24 GHz transceiver IFX VQFN32

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.3, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BGT24MTR11 VQFN32-9 BGT24MTR11 VQFN32-9-PO VQFN32-9

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9-PO VQFN32-9 VQFN32-9

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.2, 2014-07-15 RF & Protection Devices Edition 2014-07-15 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9-PO VQFN32-9 VQFN32-9

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9-PO VQFN32-9 VQFN32-9

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BGT24MTR11 VQFN32-9) BGT24MTR11 VQFN32-9-PO VQFN32-9 VQFN32-9

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BGT24MTR11 VQFN32-9) BGT24MTR11 VQFN32-9-PO VQFN32-9 VQFN32-9

    transistor IR 9317

    Abstract: 84121 photo thyristor audio MAGNETIC HEAD MAGNETIC HEAD circuit audio oscillator tunnel diode 9315 DATASHEET TUNNEL DIODE MAGNETIC HEAD circuit oscillator tunnel diode datasheet
    Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material


    Original     		PDF 08-Jan-04 transistor IR 9317 84121 photo thyristor audio MAGNETIC HEAD MAGNETIC HEAD circuit audio oscillator tunnel diode 9315 DATASHEET TUNNEL DIODE MAGNETIC HEAD circuit oscillator tunnel diode datasheet

    U1001

    Abstract: pHEMT transistor MTBF 84-1LMI XU1001 U100-1 U-10-01 77598
    Text: 36.0-40.0 GHz GaAs MMIC Up-Converter U1001 July 2001 - Rev 7/27/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 4.0 dB Typical Small Signal Gain 35 dB Typical LO/RF Isolation Low DC Power Consumption Operates at +3.0 VDC 2.90 mm X 2.50 mm Die Size


    Original     		PDF U1001 MIL-STD-883 U1001 pHEMT transistor MTBF 84-1LMI XU1001 U100-1 U-10-01 77598

    transistor R1001

    Abstract: mixers circuit using 90 degree hybrid presidio components R1001 XR1001 84-1LMI XH1000 38REC
    Text: 36.0-40.0 GHz GaAs MMIC Receiver R1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Sub-Harmonic Receiver 5.0 dB Conversion Gain 4.0 dB Noise Figure 12.0 dB Image Rejection 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		PDF R1001 01-May-02 MIL-STD-883 transistor R1001 mixers circuit using 90 degree hybrid presidio components R1001 XR1001 84-1LMI XH1000 38REC

    transistor R1001

    Abstract: R1001 84-1LMI XR1001
    Text: 36.0-40.0 GHz GaAs MMIC Receiver R1001 August 2001 - Rev 8/01/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 5.0 dB Typical Small Signal Conversion Gain 4.0 dB Typical Noise Figure 12.0 dB Typical Image Rejection 2.90 mm X 2.50 mm Die Size 100% On-Wafer RF and DC Testing


    Original     		PDF R1001 MIL-STD-883 transistor R1001 R1001 84-1LMI XR1001

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


    OCR Scan     		PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    BAV46

    Abstract: bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAT10 BAW96 BAV71 BAT50R
    Text: Microwave solid state mixer diodes M axim um Operating Frequency GHz Type No. book 1 part 8 Typical Noise Figure (dB) Typical Impedance 8.5 750 O perating Temperature Z if Drawing i'e fe re n c e O u tlin e <oc> (Í2) GERMANIUM POINT CONTACT 40 AAY34 - 5 5 t o +100


    OCR Scan     		PDF AAY34 S0D-42 BAT10 SAT11 BAT39 CV7762) BAT39A OD-42 BAT50R SO-26 BAV46 bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAW96 BAV71

    germanium rectifier diode

    Abstract: Germanium rectifier CV710 germanium diode CV7109 microwave mixer diode CV7108 Germanium Amplifier noise diode Germanium Mixer Diodes
    Text: GERMANIUM MICROWAVE MIXER DIODE GEM3 GEM4 C oaxial point contact germ anium diodes intended fo r u se in pretuned c en tim e tric low n o is e m ix e r c ir c u its u p to l2 G c /s . The sp re a d of adm ittance fig u re s at 12G e/s is v e ry sm a ll. GEM3 and 4 a re the com m ercial


    OCR Scan     		PDF 12Gc/s CV7108 CV7109 SO-26 spot100 500Mc/s 10Mc/s 9375Mc/s germanium rectifier diode Germanium rectifier CV710 germanium diode microwave mixer diode Germanium Amplifier noise diode Germanium Mixer Diodes

    Microwave Mixer Diodes

    Abstract: dc/tx/1/2/1257/AAY56 AAY56 mullard germanium Germanium Mixer Diodes CV7772 germanium rectifier magnetron magnetron S BAND Mullard
    Text: GERMANIUM MICROWAVE MIXER DIODES AAY56 AAY56R T E N T A T IV E D A T A C oaxial point contact germ anium diodes intended fo r u se in p re -tu n e d c e n trim e tric low n o ise m ix e r c irc u its u p to 4 G H z . The sp re a d of adm it­ tan c e fig u re s at 4GHz is v e ry s m a ll. AAY56 andA A Y 56R are the co m m e rc ial


    OCR Scan     		PDF AAY56 AAY56R andAAY56Rare CV7771 CV7772 SO-26 AAY56 100MHz Microwave Mixer Diodes dc/tx/1/2/1257/AAY56 mullard germanium Germanium Mixer Diodes germanium rectifier magnetron magnetron S BAND Mullard

    NKT677

    Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
    Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers


    OCR Scan     		PDF AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128

    backward diode

    Abstract: tunnel diode General Electric "backward diode"
    Text: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a


    OCR Scan     		PDF CT3508-1 backward diode tunnel diode General Electric "backward diode"

    AAY50

    Abstract: AAY50R K1007 Germanium diode Mullard
    Text: M ICROW AVE M IXER DIODES AAY50 AAY50R TENTATIVE DATA Coaxial germanium point-contact diodes for u se in pre-tuned X-band low noise m ixer c irc u its. The AAY50 and AAY50R a re intended as low noise re tro fits at X-band frequencies for coaxial m ixer diodes, types SIM2/5,


    OCR Scan     		PDF AAY50 AAY50R AAY50R SO-26 247in AAY50-Page AAY50, K1007 Germanium diode Mullard

    Silicon Point Contact Diode

    Abstract: No abstract text available
    Text: TYPICAL D.C. CHARACTERISTICS 36 37 1 Low barrier PDB 1 1 Ze o Bias P D B - 1 i Sta ndard GaAs Setlottky r .♦V ✓ 3 ^ ✓ l / • 4 ik \ " Standard GaAs \ Schottky \ I Low barrier PDB 2 " / X Zero Bia s PDB I 10 -20- ; Voltage N Current /mA 8 / Figure 10. Comparison of the l-V characteristics o f a 'zero bias' PDB diode, a low barrier PDB diode and a standard


    OCR Scan     		PDF 375GHz DC1596) OC1301) -10dB -20dB 35GHz 150pA. Silicon Point Contact Diode

    diode 5082-2800

    Abstract: hp 5082-2800 diode Germanium Schottky diode handling of beam lead diodes 5082-2837
    Text: Whpl mi'tiM H E W LE T T PA C K A R D Beam Lead Schottky Diode Technical Data 5082-2837 Features • Fast Switching • High Breakdown • Beam Lead Equivalent of 5082-2800 • Platinum Tri-Metal System • Wide Temperature Range • SIOa Passivation Description


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