TRANSISTOR R1002
Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing
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R1002
MIL-STD-883
TRANSISTOR R1002
R1002 TRANSISTOR
R1002
84-1LMI
XR1002
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B1002
Abstract: XP1001 OC 140 germanium transistor pHEMT transistor MTBF 84-1LMI XB1002 XU1001 b1002 100
Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 June 2002 - Rev 26-Jun-02 Features Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 25.0 dB Small Signal Gain 4.0 dB Noise Figure +14 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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B1002
26-Jun-02
MIL-STD-883
B1002
XP1001
OC 140 germanium transistor
pHEMT transistor MTBF
84-1LMI
XB1002
XU1001
b1002 100
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TRANSISTOR R1002
Abstract: R1002 R1002 TRANSISTOR TRANSISTORS R1002 256QAM 84-1LMI XH1000 XR1002
Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 May 2002 - Rev 01-May-02 Features Chip Device Layout y High Dynamic Range Receiver Integrated Gain Control +4.0 dBm Input Third Order Intercept IIP3 3.0 dB Noise Figure 18.0 dB Image Rejection 100% On-Wafer RF and DC Testing
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R1002
01-May-02
MIL-STD-883
TRANSISTOR R1002
R1002
R1002 TRANSISTOR
TRANSISTORS R1002
256QAM
84-1LMI
XH1000
XR1002
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B1000
Abstract: Mimix xb1000 XU1000 pHEMT transistor MTBF
Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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B1000
01-May-02
MIL-STD-883
B1000
Mimix xb1000
XU1000
pHEMT transistor MTBF
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Mimix phase shifter
Abstract: 84-1LMI D1000
Text: 17.0-27.0 GHz GaAs MMIC Vector Modulator D1000 June 2001 - Rev 6/06/01 Features Chip Device Layout 17.0-27.0 GHz Frequency Range 8.0 dB Typical Insertion Loss Continuous Phase Control Control Voltage from -1.5 to 0 VDC 2.33 mm X 2.50 mm Die Size 100% On-Wafer RF, DC and Insertion Loss Testing
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D1000
MIL-STD-883
Mimix phase shifter
84-1LMI
D1000
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transistor R1001
Abstract: R1001 84-1LMI XR1001
Text: 36.0-40.0 GHz GaAs MMIC Receiver R1001 August 2001 - Rev 8/01/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 5.0 dB Typical Small Signal Conversion Gain 4.0 dB Typical Noise Figure 12.0 dB Typical Image Rejection 2.90 mm X 2.50 mm Die Size 100% On-Wafer RF and DC Testing
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R1001
MIL-STD-883
transistor R1001
R1001
84-1LMI
XR1001
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B1002
Abstract: 84-1LMI XB1002 OC 140 germanium transistor b1002 100
Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 July 2001 - Rev 7/27/01 Features 36.0-43.0 GHz Frequency Range 25.0 dB Typical Small Signal Gain 4.0 dB Typical Noise Figure +14 dBm Typical Compression Point Operates at +3.0 to +5.5 VDC 2.90 mm X 1.50 mm Die Size
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B1002
MIL-STD-883
B1002
84-1LMI
XB1002
OC 140 germanium transistor
b1002 100
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pHEMT transistor MTBF
Abstract: BA0047
Text: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier 28LN2BA0047 May 2002 - Rev 01-May-02 Features Chip Device Layout ar General Description y Receiver Front End Excellent Input/Output Match Self-biased Architecture 15.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing
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28LN2BA0047
01-May-02
MIL-STD-883
22Mar2002
22Mar20
BA0047
22Mar200
28LN2BA004
pHEMT transistor MTBF
BA0047
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XB1001
Abstract: 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS
Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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B1001
01-May-02
MIL-STD-883
XB1001
84-1LMI
B1001
XP1000
XU1000
GERMANIUM SMALL SIGNAL TRANSISTORS
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P115W
Abstract: p115 p0049 34-1P
Text: 24.0-32.0 GHz GaAs MMIC Low Noise Amplifier 28LN3UA0049 May 2002 - Rev 01-May-02 Features Chip Device Layout ar General Description y Receiver Front End Self-biased Architecture 20.0 dB Small Signal Gain 2.7 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing
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28LN3UA0049
01-May-02
MIL-STD-883
P115W
p115
p0049
34-1P
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PCB Rogers RO4003
Abstract: No abstract text available
Text: 17.0-27.0 GHz GaAs MMIC Surface Mount Buffer Amplifier B1001P1 May 2002 - Rev 01-May-02 Features Packaged Chip Device y Surface Mount Leadless Package Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 19.0 dB Small Signal Gain 3.5 dB Noise Figure
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B1001P1
01-May-02
XB1001
PCB Rogers RO4003
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diode p1000
Abstract: P1000 P1000J 84-1LMI 55VID vg34c
Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 June 2001 - Rev 6/06/01 Features Chip Device Layout 17.0-24.0 GHz Frequency Range 18.0 dB Typical Small Signal Gain On-Chip Output Power Detector +37.0 dBm Typical Third Order Intercept Point IP3 Operates at +5.5 VDC
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P1000
MIL-STD-883
diode p1000
P1000
P1000J
84-1LMI
55VID
vg34c
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r1003 transistor
Abstract: TRANSISTOR R1003 r1003 XR1003 84-1LMI pHEMT transistor MTBF R100-3
Text: 20.0-32.0 GHz GaAs MMIC Receiver R1003 October 2001 - Rev 10/05/01 Features Chip Device Layout 20.0-32.0 GHz Frequency Range 17.0 dB Typical Conversion Gain 3.0 dB Typical Noise Figure 22.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883
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R1003
MIL-STD-883
r1003 transistor
TRANSISTOR R1003
r1003
XR1003
84-1LMI
pHEMT transistor MTBF
R100-3
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84-1LMI
Abstract: P1001
Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1001 June 2001 - Rev 6/06/01 Features Chip Device Layout P1001 ar y 26.0-40.0 GHz Frequency Range 12 dB Typical Small Signal Gain Excellent Input/Output Return Loss +36.0 dBm Typical Third Order Intercept Point IP3
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P1001
MIL-STD-883
84-1LMI
P1001
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transistor R1001
Abstract: mixers circuit using 90 degree hybrid presidio components R1001 XR1001 84-1LMI XH1000 38REC
Text: 36.0-40.0 GHz GaAs MMIC Receiver R1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Sub-Harmonic Receiver 5.0 dB Conversion Gain 4.0 dB Noise Figure 12.0 dB Image Rejection 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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R1001
01-May-02
MIL-STD-883
transistor R1001
mixers circuit using 90 degree hybrid
presidio components
R1001
XR1001
84-1LMI
XH1000
38REC
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R1000 resistor
Abstract: XR1000 R1000 XH1000 receiver mmic sl353 pHEMT transistor MTBF
Text: 17.0-27.0 GHz GaAs MMIC Receiver R1000 May 2002 - Rev 01-May-02 Chip Device Layout Features Fundamental Integrated Receiver 10.0 dB Conversion Gain 3.5 dB Noise Figure 15.0 dB Image Rejection 60.0 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883
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R1000
01-May-02
MIL-STD-883
R1000 resistor
XR1000
R1000
XH1000
receiver mmic
sl353
pHEMT transistor MTBF
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U1001
Abstract: pHEMT transistor MTBF 84-1LMI XU1001 U100-1 U-10-01 77598
Text: 36.0-40.0 GHz GaAs MMIC Up-Converter U1001 July 2001 - Rev 7/27/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 4.0 dB Typical Small Signal Gain 35 dB Typical LO/RF Isolation Low DC Power Consumption Operates at +3.0 VDC 2.90 mm X 2.50 mm Die Size
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U1001
MIL-STD-883
U1001
pHEMT transistor MTBF
84-1LMI
XU1001
U100-1
U-10-01
77598
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harmonic mixer
Abstract: 84-1LMI H1000
Text: 19.0-25.0 GHz GaAs MMIC Harmonic Mixer H1000 June 2001 - Rev 6/06/01 Features Chip Device Layout 19.0-25.0 GHz Frequency Range 8X, 10X or 12X Pump Operation 1.9-2.5 GHz Pump Frequency 0.5-1.0 GHz Recovered IF Frequency 30 to 50 dB Conversion Loss 2.33 mm X 2.00 mm Die Size
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H1000
MIL-STD-883
harmonic mixer
84-1LMI
H1000
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RD36K
Abstract: No abstract text available
Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1001 June 2002 - Rev 26-Jun-02 Features Chip Device Layout P1001 ar y High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 12 dB Small Signal Gain
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P1001
26-Jun-02
MIL-STD-883
RD36K
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BA0050
Abstract: No abstract text available
Text: 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier 28LN3BA0050 May 2002 - Rev 01-May-02 Features Chip Device Layout ar General Description y Receiver Front End Excellent Input/Output Match Self-biased Architecture 24.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing
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28LN3BA0050
01-May-02
MIL-STD-883
Mar2002
BA0050
BA0050
3BA0050
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XP1002
Abstract: 84-1LMI P1002 XB1002 XU1001 420 MMIC
Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1002 May 2002 - Rev 01-May-02 Features Chip Device Layout P1002 ar y High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 12 dB Small Signal Gain
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P1002
01-May-02
MIL-STD-883
XP1002
84-1LMI
P1002
XB1002
XU1001
420 MMIC
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diode p1000
Abstract: P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram
Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent for Modulations up to 64 QAM High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector
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P1000
01-May-02
MIL-STD-883
diode p1000
P1000 diode
OC 140 germanium transistor
sl353
P1000
84-1LMI
XP1000
XU1000
pHEMT transistor MTBF
gold detector circuit diagram
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P1002
Abstract: 84-1LMI Mimix Broadband
Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1002 June 2001 - Rev 6/06/01 Features Chip Device Layout P1002 ar y 26.0-40.0 GHz Frequency Range 12 dB Typical Small Signal Gain On-Chip Output Power Detector +36.0 dBm Typical Third Order Intercept Point IP3 Operates at +5.5 VDC
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P1002
MIL-STD-883
P1002
84-1LMI
Mimix Broadband
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A005
Abstract: No abstract text available
Text: 25.0-34.0 GHz GaAs MMIC Low Noise Amplifier 28LN2UA0054 May 2002 - Rev 01-May-02 Features Chip Device Layout y Receiver Front End Small Size 18.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883
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28LN2UA0054
01-May-02
MIL-STD-883
28LN2U
2Mar20
A005
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