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    GERMANIUM MESA TRANSISTOR PNP Search Results

    GERMANIUM MESA TRANSISTOR PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM MESA TRANSISTOR PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    germanium mesa transistor pnp

    Abstract: NTE126
    Text: NTE126 Germanium Mesa Transistor, PNP, for High–Speed Switching Applications Maximum Ratings: Collector–Emitter Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc


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    PDF NTE126 15Vdc 150mW 00MHz) 10mAdc, 100mAdc, 25mAdc) germanium mesa transistor pnp NTE126

    oscillator pnp 800MHZ

    Abstract: NTE160 "PNP Transistor" transistor germanium Germanium power
    Text: NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V


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    PDF NTE160 NTE160 900MHz. 100MHz 450kHz 800MHz oscillator pnp 800MHZ "PNP Transistor" transistor germanium Germanium power

    AF279

    Abstract: tfk transistor germanium-pnp-mesa-hf-transistor AF279 transistor tfk 140 Germanium mesa AF 279 042PF
    Text: Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: V orstufen bis 900 MHz Applications: Pre stages up to 900 MHz Besondere Merkmale: Features: • Passivierte O berfläche • • Leistungsverstärkung 16 dB • Power gain 16 dB


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    AF280

    Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF
    Text: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:


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    AF 109 R

    Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor
    Text: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB


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    PDF AF109R AF 109 R AF109R af109 germanium-pnp-mesa-hf-transistor

    AF239

    Abstract: germanium-pnp-mesa-hf-transistor Tfk 239 900 mhz oscillator AF 239
    Text: * AF 239 S 'W Nicht für Neuentwicklungen Not for new developments 4W Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixer and o scilla to r stages up to 900 MHz


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    AF239

    Abstract: germanium-pnp-mesa-hf-transistor AF 239
    Text: 'W Nicht für Neuentwicklungen Not for new developments AF 239 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixe r and o scilla to r stages up to 900 MHz


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    TFK U 111 B

    Abstract: 6 TFK 106 tfk 106 AF106 tfk 518 tfk u 111 TFK AF TFK 111 tfk 325 germanium-pnp-mesa-hf-transistor
    Text: Nicht für Neuentwicklungen Not for new developments AF 106 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 260 MHz Applications: Pre, m ixer and o scilla to r stages up to 260 MHz Besondere Merkmale:


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    PDF 01mA- TFK U 111 B 6 TFK 106 tfk 106 AF106 tfk 518 tfk u 111 TFK AF TFK 111 tfk 325 germanium-pnp-mesa-hf-transistor

    AFY42

    Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
    Text: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in


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    PDF AFY42 AFY42 60106-Y BIfi03 U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B

    AFY18

    Abstract: AFY18E AFY18D germanium mesa transistor pnp Germanium Transistor afy1
    Text: AFY18 PNP Mesa transistor for antenna amplifiers up to 250 MHz The AFY18 is a germanium PNP RF epitaxial mesa transistor in a case 5 C3 DIN 41 873 TO -39 . The collector is electrically connected to the case. The A F Y 18 is designed for antenna amplifiers up to 250 MHz.


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    PDF AFY18 AFY18 Q60106-Y18- AFY18E AFY18D germanium mesa transistor pnp Germanium Transistor afy1

    AFY11

    Abstract: germanium mesa transistor pnp Germanium Transistor Germanium mesa
    Text: AFY11 Not for new developm ent PNP Mesa transistor for RF-application The AFY11 is a germanium PNP-RF mesa transistor in a case 5 C 3 DIN 41 873 TO-39 . The collector is electrically connected to the case. AFY11 is designed for universal RF-applications up to about 300 MHz.


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    PDF AFY11 AFY11 Q60106 100MHz; germanium mesa transistor pnp Germanium Transistor Germanium mesa

    pm4020

    Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
    Text: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


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    PDF 23SbOS AF240 Q60106-X240 -13J5Ã TambS45Â -CC80 y12bl pm4020 AF279 p21b AF279S 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor

    transistor bc 541

    Abstract: TRANSISTOR BC 534 PNP transistor Siemens 14 S S 92 AF139 TRANSISTOR BC 534 Germanium power Germanium mesa
    Text: 55C D • û23St.D5 OOQ405Ö T PNP Germanium RF Transistor -SIEMENS A F 139 - AKTIENGESELLSCHAF 31-07 for input stages, m ixer and oscillator stages up to 860 MHz AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.


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    PDF OOQ405Ö Q60106-X139 135H-- AF139 transistor bc 541 TRANSISTOR BC 534 PNP transistor Siemens 14 S S 92 AF139 TRANSISTOR BC 534 Germanium power Germanium mesa

    AF 239 S

    Abstract: AF 239 af239 Germanium power S 239 L siemens
    Text: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


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    PDF 23SbQS Q62701-F51 oro-20 F--05 AF239S AF 239 S AF 239 af239 Germanium power S 239 L siemens

    transistor 1548 b

    Abstract: AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power
    Text: 2SC D m û23SbQS 0004075 4 IS IE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF T - 3 I - 07 for output, mixer, and oscillator stages up to 9 0 0 M H z AF 2 39 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


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    PDF 235b05 GGMG72 Q62701-F51 -13Silâ CE-10 aa35b05 af239s transistor 1548 b AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power

    AF239

    Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
    Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.


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    PDF A23Sb05 AF239 Q60106-X239 T1-0221) transistor h5c AF 239 0406H F239 Q60106-X239 WTV4 AAO-4A

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    AF139

    Abstract: Germanium Amplifier Germanium mesa Germanium power
    Text: G ERMANIUM MESA PNP AF139 UHF AMPLIFIER The AF 139 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It is particularly designed for use in prestages as well as in mixer and oscillator stages up to 860 MHz. ABSOLUTE MAXIMUM RATINGS ^C B O ^C E O


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    PDF AF139 AF139 Germanium Amplifier Germanium mesa Germanium power

    AF239S

    Abstract: Germanium mesa
    Text: 11419771 AF239S MESA PNP UHF PREAMPLIFIER The AF 239S is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It is particularly designed as preamplifier, mixer and oscillator up to 900 MHz. ABSOLUTE MAXIMUM RATINGS V C ES VcEO ^E B O 'c P.o, Collector-em itter voltage VBE = 0


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    PDF AF239S AF239S Germanium mesa

    transistor KSA

    Abstract: AF109R
    Text: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .


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    PDF Q60106-X109-R1 Q004QS? AF109R transistor KSA AF109R

    AFY12

    Abstract: OC 140 germanium transistor 103MHZ Germanium Transistor FLR12 611b transistor
    Text: AFY12 PNP Mesa transistor for RF-application up to 260 MHz The A F Y 12 is a germanium P N P RF mesa transistor for general high-frequency use in a case 18 A 4 D IN 41 876 TO-72 . The terminals are electrically insulated from the case. The A F Y 12 is designed for use in pre-stages, mixer stages and oscillator


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    PDF AFY12 Q60106 120mmho AFY12 OC 140 germanium transistor 103MHZ Germanium Transistor FLR12 611b transistor

    AF106

    Abstract: AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106
    Text: 5SC D • 023SbQS GGQHG47 S H S I E G ; PNP Germanium RF Transistor T '- lf- O l ' A F 106 SIEMENS A K T I E N G E S E L L S C H A F T 04047 D for input, mixer, and oscillator stages up to 260 MHz The AF 106 is a general-purpose germanium PNP high frequency mesa transistor in TO 72


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    PDF 023SbOS GGGHG47 AF106 AKTIEN6ESELLSCHAF25C AF106 AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106

    transistor a750

    Abstract: F240 transistor TIC 122 Transistor Germanium power tic 122
    Text: r. 2 S C D • f l S3 SbO S G0 G4 G7 b 1 H SIE6 PIMP Germanium RF Transistor - S I E M E N S AF240 AKTIENGESELLSCHAF fo r m ixe r and o sc illa to r sta g e s up to 9 0 0 M H z A F 24 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


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    PDF AF240 TambS45 0004Q7A transistor a750 F240 transistor TIC 122 Transistor Germanium power tic 122

    021B2

    Abstract: transistor cbj hmv12 pnp germanium transistor 15bis AFY16 BA RV mesa
    Text: Nicht für N eu entw icklun g PNP-Mesatransistor für HF-Anwendungen bis 900 MHz AFY16 A FY 16 ist ein PNP-Germanium-Transistor in Mesa-Techmk um Gehäuse 18 A 4 DIN 41 876 T O -72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor A FY 16 ist für


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    PDF Q60106-Y16 B63310-K1-A12 021B2 transistor cbj hmv12 pnp germanium transistor 15bis AFY16 BA RV mesa