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    GENERAL SEMICONDUCTOR MARKING 36A SMA Search Results

    GENERAL SEMICONDUCTOR MARKING 36A SMA Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING 36A SMA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDD26AN06A0

    Abstract: No abstract text available
    Text: FDD26AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 36A, 26mΩ Features Applications • rDS ON = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD26AN06A0 O-252AA

    Untitled

    Abstract: No abstract text available
    Text: FDD26AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 36A, 26mΩ Features Applications • rDS ON = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD26AN06A0 O-252AA

    FDD24AN06LA0

    Abstract: No abstract text available
    Text: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD24AN06LA0 O-252AA

    Untitled

    Abstract: No abstract text available
    Text: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD24AN06LA0 O-252AA

    Untitled

    Abstract: No abstract text available
    Text: FQA36P15 / FQA36P15_F109 P-Channel QFET MOSFET −150 V, -36 A, 90 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQA36P15

    M043 Diode

    Abstract: FDD26AN06A0 m043
    Text: FDD26AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 36A, 26mΩ Features Applications • rDS ON = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD26AN06A0 O-252AA M043 Diode m043

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    KP-69

    Abstract: mosfet 30V 18A TO 252 FDD24AN06LA0
    Text: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD24AN06LA0 O-252AA KP-69 mosfet 30V 18A TO 252

    N310AS

    Abstract: N310AP ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST
    Text: ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		PDF ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 1800pF N310AS N310AP ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST

    N310AS

    Abstract: ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST M028
    Text: ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		PDF ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 1800pF N310AS ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST M028

    6V8C 67

    Abstract: No abstract text available
    Text: P4SMA6.8A Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA V(BR) 6.8 to 220V Peak Pulse Power 400W Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)


    Original     		PDF DO-214AC 29-Aug-02 6V8C 67

    Untitled

    Abstract: No abstract text available
    Text: TPCA8A01-H ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type Ultra-High-Speed U-MOS Ⅲ TPCA8A01-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm


    Original     		PDF TPCA8A01-H

    FCP36N60N

    Abstract: fcp36N60 Mosfet application note fairchild FCp Series MOSFET 600V 36A
    Text: SupreMOSTM FCP36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCP36N60N FCP36N60N fcp36N60 Mosfet application note fairchild FCp Series MOSFET 600V 36A

    6v8a

    Abstract: diode 6v8a IEC1000-4-4 IEC801-2 IEC801-4 P4SMA10CA
    Text: P4SMA Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA d e e d en ang t x E eR g a t l Vo Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)


    Original     		PDF DO-214AC DO-214Az 50mVp-p 17-Feb-04 6v8a diode 6v8a IEC1000-4-4 IEC801-2 IEC801-4 P4SMA10CA

    Untitled

    Abstract: No abstract text available
    Text: P4SMA6.8A Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) V(BR) Unidirectional 6.8 to 540V V(BR) Bidirectional


    Original     		PDF DO-214AC 9-Apr-02

    Fairchild Semiconductor - Process

    Abstract: FCP36N60N mosfet 600v
    Text: SupreMOSTM FCP36N60N tm N-Channel MOSFET 600V, 36A, 90mΩ Features Description • RDS on = 81mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCP36N60N Fairchild Semiconductor - Process FCP36N60N mosfet 600v

    FCB36N60N

    Abstract: ISD36A MOSFET 600V 36A
    Text: SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCB36N60N FCB36N60N ISD36A MOSFET 600V 36A

    6v8a

    Abstract: diode marking on semiconductor transzorb IEC1000-4-4 3 Volt transzorb 420 6V8A diode 47c diode 6v8a TVS 33A type marking code 30C IEC801-2
    Text: P4SMA Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) V(BR) Unidirectional 6.8 to 540V V(BR) Bidirectional 6.8 to 220V


    Original     		PDF DO-214AC DO-214AC 50mVp-p 09-Oct-02 6v8a diode marking on semiconductor transzorb IEC1000-4-4 3 Volt transzorb 420 6V8A diode 47c diode 6v8a TVS 33A type marking code 30C IEC801-2

    Untitled

    Abstract: No abstract text available
    Text: P4SMA Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA d e e d en ang t x E eR g a t l Vo Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)


    Original     		PDF DO-214AC 08-Apr-05

    N-Channel 40V MOSFET 32a

    Abstract: FDB8878
    Text: FDB8878 N-Channel Logic Level PowerTrench MOSFET 30V, 48A, 14mΩ General Descriptions Features „ rDS ON = 14mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to „ rDS(ON) = 18mΩ, VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using


    Original     		PDF FDB8878 O-263AB N-Channel 40V MOSFET 32a FDB8878

    Untitled

    Abstract: No abstract text available
    Text: FDP8878 N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15mΩ Features General Descriptions ̈ rDS ON = 15mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to ̈ rDS(ON) = 19mΩ, VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using


    Original     		PDF FDP8878 O-220AB

    FDP8878

    Abstract: No abstract text available
    Text: FDP8878 N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15mΩ General Descriptions Features „ rDS ON = 15mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to „ rDS(ON) = 19mΩ, VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using


    Original     		PDF FDP8878 O-220AB FDP8878

    Untitled

    Abstract: No abstract text available
    Text: SupreMOS FCA36N60NF TM tm N-Channel MOSFET, FRFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCA36N60NF FCA36N60NF