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    onsemi FCB36N60NTM

    MOSFET N-CH 600V 36A D2PAK
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    FCB36N60N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FCB36N60NTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 36A D2PAK Original PDF

    FCB36N60N Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FCB36N60N N-Channel SupreMOS MOSFET 600 V, 36 A, 90 mΩ Features Description • RDS on = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from


    Original     		PDF FCB36N60N FCB36N60N

    FCB36N60N

    Abstract: ISD36A MOSFET 600V 36A
    Text: SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCB36N60N FCB36N60N ISD36A MOSFET 600V 36A

    Untitled

    Abstract: No abstract text available
    Text: FCB36N60N N-Channel SupreMOS MOSFET 600 V, 36 A, 90 mΩ Features Description • RDS on = 81 mΩ (Typ.) @ VGS = 10 V, ID = 18 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCB36N60N