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    Flip Electronics FCA36N60NF

    MOSFET N-CH 600V 34.9A TO3PN
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    onsemi FCA36N60NF

    MOSFET N-CH 600V 34.9A TO3PN
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    Fairchild Semiconductor Corporation FCA36N60NF

    N-CHANNEL SUPREMOS FRFET MOSFET Power Field-Effect Transistor, 34.9A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA FCA36N60NF 450
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    FCA36N60NF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FCA36N60NF Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 34.9A TO3PN Original PDF

    FCA36N60NF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fairchild 4245

    Abstract: FCA36N60NF
    Text: SupreMOS FCA36N60NF N-Channel tm SupreMOS®, FRFET®,MOSFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS® MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCA36N60NF FCA36N60NF fairchild 4245

    Untitled

    Abstract: No abstract text available
    Text: FCA36N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 34.9 A, 95 mΩ Features Description • RDS on = 80 mΩ (Typ.)@ VGS = 10 V, ID = 18 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology


    Original     		PDF FCA36N60NF FCA36N60NF

    FCA36N60NF/pdf/MAX6029/FJN4303RBU-datasheet

    Abstract: FCA36N60NF/pdf/CX77112-14/fairchild 4245
    Text: FCA36N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 34.9 A, 95 mΩ Features Description • RDS on = 80 mΩ (Typ.) @ VGS = 10V, ID = 18 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology


    Original     		PDF FCA36N60NF FCA36N60NF/pdf/MAX6029/FJN4303RBU-datasheet FCA36N60NF/pdf/CX77112-14/fairchild 4245

    Untitled

    Abstract: No abstract text available
    Text: SupreMOS FCA36N60NF TM tm N-Channel MOSFET, FRFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCA36N60NF FCA36N60NF

    Untitled

    Abstract: No abstract text available
    Text: FCA36N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 34.9 A, 95 mΩ Features Description • RDS on = 80 mΩ (Typ.) @ VGS = 10V, ID = 18 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology


    Original     		PDF FCA36N60NF