JESD-22
Abstract: A108 APM9984C APM9984CCG B102 GEM2928
Text: APM9984CCG N-Channel Enhancement Mode MOSFET Features • Pin Description D2 D2 D1 D1 20V/6A, RDS ON =16mΩ(typ.) @ VGS=4.5V G2 S2 G1 S1 RDS(ON)=19mΩ(typ.) @ VGS=2.5V • • • • Super High Dense Cell Design Top View of JSOT-8 Reliable and Rugged ESD Rating : 2KV HBM
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APM9984CCG
JESD-22,
JESD-22
A108
APM9984C
APM9984CCG
B102
GEM2928
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APM9926C
Abstract: M9926 GEM2928 A108 B102 JESD-22 APM9926CCG APM9926CC
Text: APM9926CCG Dual N-Channel Enhancement Mode MOSFET Features • Pin Description D2 D2 D1 D1 20V/5A , RDS ON =25mΩ(typ.) @ VGS=4.5V RDS(ON)=34mΩ(typ.) @ VGS=2.5V • • • G2 S2 G1 S1 Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available
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APM9926CCG
APM9926C
APM9926C
M9926C
JESD-22,
M9926
GEM2928
A108
B102
JESD-22
APM9926CCG
APM9926CC
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APM2901CG
Abstract: GEM2928 APM2901 diode MARKING CODE CG M2901
Text: APM2901CG P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-10A, D RDS ON = 9mΩ(typ.) @ VGS= -4.5V D D D G S S RDS(ON)= 12.5mΩ(typ.) @ VGS= -2.5V S RDS(ON)= 18mΩ(typ.) @ VGS= -1.8V • • • Super High Dense Cell Design Top View of JSOT-8
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APM2901CG
-20V/-10A,
APM2901CG
GEM2928
APM2901
diode MARKING CODE CG
M2901
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SSFN2316E
Abstract: GEM2928 "battery protection" GEM2928-8L
Text: SSFN2316E GENERAL FEATURES ● VDS = 20V,ID = 6.5A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic diagram ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product is acquired
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SSFN2316E
Rating2000V
GEM2928-8L
N2316E
GEM2928-8L
25unless
SSFN2316E
GEM2928
"battery protection"
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