Untitled
Abstract: No abstract text available
Text: APM9984CCG N-Channel Enhancement Mode MOSFET Pin Description Features • 8 20V/6A , RDS ON =18mΩ(typ.) @ VGS=4.5V RDS(ON)=22mΩ(typ.) @ VGS=2.5V • • • 6 5 1 Super High Dense Cell Design 2 3 Reliable and Rugged 4 Lead Free Available (RoHS Compliant)
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APM9984CCG
APM9984C
OT-23-6
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JESD-22
Abstract: A108 APM9984C APM9984CCG B102 GEM2928
Text: APM9984CCG N-Channel Enhancement Mode MOSFET Features • Pin Description D2 D2 D1 D1 20V/6A, RDS ON =16mΩ(typ.) @ VGS=4.5V G2 S2 G1 S1 RDS(ON)=19mΩ(typ.) @ VGS=2.5V • • • • Super High Dense Cell Design Top View of JSOT-8 Reliable and Rugged ESD Rating : 2KV HBM
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APM9984CCG
JESD-22,
JESD-22
A108
APM9984C
APM9984CCG
B102
GEM2928
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APM9984C
Abstract: APM9984CCG STD-020C
Text: APM9984CCG N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =16mΩ(typ.) @ VGS=4.5V RDS(ON)=19mΩ(typ.) @ VGS=2.5V • • • • Super High Dense Cell Design Top View of JSOT-8 Reliable and Rugged ESD Rating : 2KV HBM (8)
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APM9984CCG
APM9984C
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
MIL-STD-883D-1011
MIL-STD-883D-3015
100mA
APM9984C
APM9984CCG
STD-020C
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