Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UG1N120 Preliminary Insulated Gate Bipolar Transistor 5.3A, 1200V NPT SERIES N-CHANNEL IGBT DESCRIPTION The UTC UG1N120 is a NPT series N-Channel IGBT, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, etc.
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UG1N120
UG1N120
O-220
UG1N120L-TA3-T
UG1N120G-TA3-T
QW-R207-028
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UG5N120 Preliminary Insulated Gate Bipolar Transistor 21A, 1200V NPT N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES DESCRIPTION The UTC UG5N120 is a NPT N-Channel IGBT, it uses UTC’s advanced technology to provide the customers with a minimum
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UG5N120
UG5N120
O-220
UG5N120L-TA3-T
UG5N120G-TA3-T
QW-R207-029
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mosfet 10a 600v
Abstract: D-12 IRGBC20S rectifier IGBT IRGBC20S IGBT
Text: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S
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IRGBC20S
O-220AB
mosfet 10a 600v
D-12
IRGBC20S
rectifier IGBT
IRGBC20S IGBT
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D-12
Abstract: IRGBC20S IRGBC20S IGBT
Text: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S
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IRGBC20S
O-220AB
D-12
IRGBC20S
IRGBC20S IGBT
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D-12
Abstract: IRGBC20S
Text: Previous Datasheet Index Next Data Sheet IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications.
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IRGBC20S
O-220AB
D-12
IRGBC20S
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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uts 7805
Abstract: 7805 voltage regulator IC function
Text: 19-0001; Rev 2; 8/97 M ic roproc e ssor Volt a ge M onit or w it h Dua l Ove r/U nde rvolt a ge De t e c t ion The ICL7665 warns microprocessors µPs of overvoltage and undervoltage conditions. It draws a typical operating current of only 3µA. The trip points and hysteresis of the two voltage detectors are individually programmed via external resistors to any voltage greater
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ICL7665
ICL7665A
ICL7665AEPA
ICL7665ESA
ICL7665AESA
uts 7805
7805 voltage regulator IC function
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Untitled
Abstract: No abstract text available
Text: < HVIGBT MODULES > CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1500HC-66R IC•·········································································· 1500A
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CM1500HC-66R
HVM-1054-D)
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Untitled
Abstract: No abstract text available
Text: 19-0438; Rev 0; 9/95 NUAL KIT MA ATION EET H S A EVALU T WS DA FOLLO 5 V or Adjust a ble , Low -Volt a ge , St e p-U p DC-DC Cont rolle r _Applic a t ions High-Efficiency DC-DC Converters _Fe a t ure s ♦ 1.8V to 16.5V Input Range
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300kHz
MAX608C/D
101mm
004in.
1-0041A
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Untitled
Abstract: No abstract text available
Text: < HVIGBT MODULES > CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1500HC-66R IC•·········································································· 1500A
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CM1500HC-66R
HVM-1054-D
HVM-1054-D)
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781mA
Abstract: No abstract text available
Text: Voltage Regulators AN8017SA 1.8-volt 2-channel step-up DC-DC converter control IC • Overview Unit: mm 5.00±0.20 16 9 +0.10 0.15 –0.05 6.40±0.30 1.0 0° to 10° di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing
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AN8017SA
AN8017SA
16-pin
781mA
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Untitled
Abstract: No abstract text available
Text: Voltage Regulators AN8018SA 1.8-volt 2-channel step-up, step-down, or inverting DC-DC converter control IC Unit: mm • Overview The AN8018SA is a two-channel PWM DC-DC converter control IC that features low-voltage operation. This IC can obtain the step-up, step-down and inverting voltages with a small number of external components.
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AN8018SA
AN8018SA
16-pin
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Untitled
Abstract: No abstract text available
Text: 19-1225; Rev 3; 9/04 H igh-Volt a ge , Low -Pow e r Line a r Re gula t ors for N ot e book Com put e rs _Fe a t ure s The MAX1615/MAX1616 are micropower, SOT23-5 linear regulators that supply always-on, keep-alive power to CMOS RAM and microcontrollers µCs in systems
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MAX1615/MAX1616
OT23-5
MAX1615)
MAX1616)
OT-23
OT-23,
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ge traction motor
Abstract: No abstract text available
Text: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.0 November 2004 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN23659)
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DIM400XSM65-K000
DS5808-1
LN23659)
DIM400XSM65-K000
ge traction motor
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md918 Transistor
Abstract: germanium MM2264 2N3050 MC369G
Text: TH E SEM ICO N D U CTO R DATA BOOK SUPPLEMENT 1 This is the first supplement to the 2nd Edition of the Semiconductor Data Book originally publishedin August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers intro
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MC1550G
md918 Transistor
germanium
MM2264
2N3050
MC369G
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Marcon capacitor Co
Abstract: CACFM D1N54 2SC3279 equivalent 2SK1112 CACFM 1A220M Marcon 2SC3279 41178 8436
Text: Contents Features . 1 Applications. 1 Block d ia g ra m . 1 Pin A s s ig n m e n t. ; .
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RCH855
47//H)
2SK1112*
/50mA
2SK1112.
Marcon capacitor Co
CACFM
D1N54
2SC3279 equivalent
2SK1112
CACFM 1A220M
Marcon
2SC3279
41178
8436
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ge traction motor
Abstract: No abstract text available
Text: GP500LSS06S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R DS4324 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4324 - 4.3 The GP500LSS06S is a single switch 600V, robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT . Designed for low power loss, the module
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GP500LSS06S
DS4324
GP500LSS06S
ge traction motor
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGY30N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4
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MGY30N60D/D
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20N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGW 20N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7
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MGW20N60D/D
20N60D
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ge traction motor
Abstract: DS493
Text: @M ITEL GP800DHB12T Powerline N-Channel IGBT Module SEMICONDUCTOR A dvance Inform ation Supesedes August 1998, version DS4931-2.0 DS4931-3.5 February 1999 The GP800DHB12T is a dual switch 1200V, robust n channel enhan cem e nt m ode Insulated gate bipolar
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DS4931-2
GP800DHB12T
DS4931-3
GP800DHB12T
ge traction motor
DS493
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30N60
Abstract: 30N60 220 bt 109 transistor w30n60 Transistor motorola 418 gw 348
Text: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 30N 60 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced
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MGW30N60/D
30N60
30N60 220
bt 109 transistor
w30n60
Transistor motorola 418
gw 348
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iss-101 diode
Abstract: 873021A 873025 H1 SOT-89 amplifier S-875045BUP-ABA-T2 S-87X aaat
Text: Contents Features . 1 Applications . 1 Options 1 Pin Assignment . 1 . 1
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S-87X
iss-101 diode
873021A
873025
H1 SOT-89 amplifier
S-875045BUP-ABA-T2
aaat
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D 400 F 6 F BIPOLAR TRANSISTOR
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope,
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BUK856-400
T0220AB
D 400 F 6 F BIPOLAR TRANSISTOR
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