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    Text: UNISONIC TECHNOLOGIES CO., LTD UG5N120 Preliminary Insulated Gate Bipolar Transistor 21A, 1200V NPT N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES  DESCRIPTION The UTC UG5N120 is a NPT N-Channel IGBT, it uses UTC’s advanced technology to provide the customers with a minimum


    Original     		UG5N120 UG5N120 O-220 UG5N120L-TA3-T UG5N120G-TA3-T QW-R207-029 PDF