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    GE 40E1 Search Results

    GE 40E1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADUM140E1BRZ-RL7 Analog Devices IC, Robust Quad ISO, 4:0 ch Visit Analog Devices Buy
    ADUM140E1BRWZ Analog Devices IC, Robust Quad ISO, 4:0 ch Visit Analog Devices Buy
    ADUM140E1WBRWZ-RL Analog Devices IC, Robust Quad ISO, 4:0 ch Visit Analog Devices Buy
    ADUM340E1WBRWZ-RL Analog Devices Auto IC, QUAD-CHANNEL DIGITAL Visit Analog Devices Buy
    ADUM240E1BRWZ Analog Devices IC,Robust Quad ISO,4:0 ch Visit Analog Devices Buy

    GE 40E1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Bridgelux ES Rectangle Array Series Product Data Sheet DS24 BXRA-xxx0800, BXRA-xxx1200, BXRA-xxx2000 BXRA-40E0950, BXRA-40E1350, BXRA-40E2200 BXRA-xxC1100, BXRA-xxC1600, BXRA-xxC2600 Introduction The Bridgelux family of LED Array products delivers high performance, compact and cost-effective solidstate lighting solutions to serve the general lighting market. These products combine the higher efficacy,


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    PDF BXRA-xxx0800, BXRA-xxx1200, BXRA-xxx2000 BXRA-40E0950, BXRA-40E1350, BXRA-40E2200 BXRA-xxC1100, BXRA-xxC1600, BXRA-xxC2600

    Untitled

    Abstract: No abstract text available
    Text: NON-ISOLATED DC/DC CONVERTERS 4.5 Vdc – 14.4 Vdc Input, 0.6 Vdc – 2.0 Vdc /40 A Outputs Bel Power Inc., a subsidiary of Bel Fuse Inc. Aug. 01, 2013 SLAN-40E1Ax RoHS Compliant Rev.D Features • Non-Isolated  Cost efficient open frame design  Power Good signal


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    PDF SLAN-40E1Ax IPC-9592 2002/95/EC 2002/95/EC,

    M4200

    Abstract: EL731
    Text: POWR-GARD PRODUCTS CATALOG ® POWR-GARD PRODUCTS CATALOG Indicating Fuses • Blocks & Holders • Relays & Controls • MOVs • Medium Voltage Fuses Littelfuse POWR-GARD — Protecting People and Equipment ® ® As the global leader in circuit protection, Littelfuse has extensive


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    PDF PF101N M4200 EL731

    D40E5

    Abstract: D40D14 tab ic D40D5 D4102 D40D1 D40D2 D40D3 D40D4 D40D7
    Text: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2


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    PDF 100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 D40E5 D40D14 tab ic D40D5 D4102 D40D7

    G20N50c

    Abstract: 20N50C1D GE 639 1D50C "parallel diode" 20N50E 443 20N 20n50c
    Text: i \M J H A R R I S semiconductor H G TH 20N 40C 1D , H G TH 20N 40E1D , H G TH 20N 50C 1D , H G TH 20N 50E 1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aphi 1995 Features Package • 20A, 400V and 500V • ^ C E O N JEDEC TO-218AC


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    PDF 40E1D O-218AC HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D AN7254 AN7260) G20N50c 20N50C1D GE 639 1D50C "parallel diode" 20N50E 443 20N 20n50c

    20N50E1

    Abstract: 20N50C g15n50c1 20N50C1 15N50C 15N50C1 15n50e1 20n40c G20N50C1 G15N50E1
    Text: m U A Q D ie lÜ HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Packages Features H G TH -TY P E S JE D E C TO -218A C • 15A and 20A, 400V and 500V EMrTTER • V CE ON 2 -5 V COLLECTOR • Tp 1jjs, 0.5(is


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    PDF HGTP15N40C1, HGTH20N40C1, -218A -220A HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40E1, 20N50E1 20N50C g15n50c1 20N50C1 15N50C 15N50C1 15n50e1 20n40c G20N50C1 G15N50E1

    12N50E

    Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
    Text: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.


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    PDF 0N40C1, HGTH12N40C1, -218A -220A HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, 12N50E 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40

    hgtm

    Abstract: HGTM12N40E1
    Text: HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 HARIRIS SEMICONDUCTOR 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features HGTH-TYPES JEDEC TO-21BAC TOP VIEW • 10A and 12A, 400V and 500V • V CE ON


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    PDF HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, O-21BAC T0-220A O-204AA HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, hgtm HGTM12N40E1

    kc 637

    Abstract: No abstract text available
    Text: HARRIS SEÎIICOND SECTOR m U U HARRIS S E M I C O N D U C T O R bßE » • M3D2271 D O S D n S HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features


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    PDF M3D2271 HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, O-218AC M302271 HGTH12N40C1 HGmi2N40C1 HGTP10N40C1 kc 637

    EM- 534 motor

    Abstract: 6N50E 840CV GE 639 g6n50e
    Text: m HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S H A FR FU S ia j sem iconductor 6A, 400V and 500V N-Channel IGBTs April 1995 Features Packages H G T D 6N 40 E 1, H G TD 6N50E1 • 6A, 400V and 500V J E D E C T O -251A A ’ ^CE ON ’ 2-5V Max. EMITTER


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    PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6N50E1 -251A 40E1S -252A EM- 534 motor 6N50E 840CV GE 639 g6n50e

    HGTM20N50

    Abstract: HGTM20N
    Text: 3 HARRIS S E M I C O N D U C T O R HGTH20N40C1, 40E1, 50C1, 50E1 HGTM20N40C1, 40E1, 50C1, 50E1 HGTP15N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs December 1993 Packages Features • HGTH-TYPES JEDEC TO-218AC TOP VIEW 15A and 20A, 400V and 500V


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    PDF HGTH20N40C1, HGTM20N40C1, HGTP15N40C1, O-218AC O-220AB O-204AA HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTM20N50 HGTM20N

    pic 16 f 888

    Abstract: 12N50c
    Text: CU H A R R IS HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IG B T s with Anti-Parallel Ultrafast D iodes Aprii 1995 Features Package • 12A, 400V and 500V J E D E C TO-218AC • V C E O N : 2 -5 V M a x • T FALL: 1 m s , 0 .5 ^ 8


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    PDF HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC AN7254 AN7260) 100AJ pic 16 f 888 12N50c

    10n50c1d

    Abstract: 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1
    Text: m l-L A J R F R IS tip s E M , c o N D u c T o R HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package • 10A, 400V and 500V JEDEC TO-22QAB • ^CE ON ' 2.5V Max.


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    PDF HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D O-22QAB HGTP10N50E1D AN7254 10n50c1d 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEIUCOND SECTOR bôE ]> 4 3 G2 E 7 1 WÊ 0 Q S G 2 DS HHAS HGTH20N40C1, 40E1, 50C1, 50E1 HGTM20N40C1, 40E1, 50C1, 50E1 HGTP15N40C1, 40E1, 50C1, 50E1 HARRIS SEMICONDUCTOR 15A, 20A, 400V and 500V N-Channel IGBTs December 1993 Packages Features HGTH-TYPES JEDEC TO-218AC


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    PDF HGTH20N40C1, HGTM20N40C1, HGTP15N40C1, O-218AC O-220AB O-204AA M302271 HGTH20N40C1 HGTM20N40C1 HGTP15N40C1

    Diode LT 443

    Abstract: diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D
    Text: rjn HARRIS VMJ s e m i c o n d u c t o r HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features JE D E C TD-220AB • 10 Amp, 400 and 500 Volt T O P VIEW • V c e o n 2.5V Max.


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    PDF HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D TD-220AB TP10N AN7254 AN7260) Diode LT 443 diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D

    Untitled

    Abstract: No abstract text available
    Text: HARRI S SEHICOND SECTOR ill H A R R IS \M J s e m i c o n d u c t o r bôE D • M3D2S71 HAS 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Features Package • 20 Amp, 400 and 500 Volt JEDEC TO-218 AC TOP VIEW • Vce on 2.5V Max.


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    PDF M3D2S71 O-218 HGTH20N40C1D, HGTH20N40E1D HGTH20N50C1D, HGTH20N50E1D AN7254 AN7260) 100AJ

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


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    PDF

    20n60b3d

    Abstract: 20N60B3 12n50e 12N60D1D 20N50C1D 12n60d1c 6N50E1D 12N50E1D gtp10n tp10n40c
    Text: HARRIS IGBT PRODUCT LINE Selection Guide co co IGBTs co HARRIS IGBT PRODUCT LINE Continued Selection Guide NO TE S: 3 -4 1 • 'c 9 0 = m axim um continuous current rating at T c = +90°C. 2. ! q M = m axim um pulsed current rating. 3. t F m easured a t Tc = +150°C.


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    PDF -220A 60B3D 20n60b3d 20N60B3 12n50e 12N60D1D 20N50C1D 12n60d1c 6N50E1D 12N50E1D gtp10n tp10n40c

    jfet e300

    Abstract: servo 9g P249F pmi op249
    Text: ► ANALOG DEVICES Dual, Precision JFET High Speed Operational Amplifier OP-249 FEATURES Fast Slew R a te .22V/|is Typ Settling Time 0 .0 1 % .1 .2u sM ax


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    PDF OP-249 10OOV/mV AD712, LT1057, OP-215, TL072, MC34082 89E-3 175E-3 jfet e300 servo 9g P249F pmi op249

    pj 809

    Abstract: PJ 969 diode PJ 986 diode 047 pj 986 diode EM- 534 motor PJ 969 GE 639
    Text: fffi HARRIS C iI s E M , co N D u cToB HGTH12N40C1D, HGTH12N40E1D HGTH12N50C 1D , HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features • JEDEC TO-218AC TOP VIEW 12 Amp, 400 and 500 Volt • V ce ON ‘ 2.5V Max.


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    PDF HGTH12N40C1D, HGTH12N40E1D HGTH12N50C HGTH12N50E1D O-218AC HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D pj 809 PJ 969 diode PJ 986 diode 047 pj 986 diode EM- 534 motor PJ 969 GE 639

    10N40E

    Abstract: 10n40e1d HGTP10N40E1D HGTP10N40C1D HGTP10N50C1D HGTP10N50E1D ls25 diode diode OA-75
    Text: bSE HARRIS SEtllCOND SECTOR H A R R I S S E M I C O N D U C T O R 1> Bfl M 3G 22 71 005D2b4 850 H H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features


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    PDF M3D2271 00502L HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D HGTP10N40E1D, HGTP10N50E1D 10N40E 10n40e1d HGTP10N40C1D HGTP10N50C1D ls25 diode diode OA-75

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEIUCON» SECTOR bö E B M3D2S71 G0 S0 2? i » 72T HHAS HARRIS HGTH12N40C1D, HGTH12N40E1D s E M , c o N D u c T o R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features •


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    PDF M3D2S71 HGTH12N40C1D, HGTH12N40E1D HGTH12N50C1D, HGTH12N50E1D O-218AC 40E1D/50E1D D/50C1D AN7254 AN7260)

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


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    PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40