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    HGTH12N40C1 Price and Stock

    Renesas Electronics Corporation HGTH12N40C1D

    INSULATED GATE BIPOLAR TRANSISTOR, 12A I(C), 400V V(BR)CES, N-CHANNEL, TO-218AC - Bulk (Alt: HGTH12N40C1D)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HGTH12N40C1D Bulk 4 Weeks 1
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    • 10000 -
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    Harris Semiconductor HGTH12N40C1D

    HGTH12N40C1 - 12A, 400V, N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTH12N40C1D 1 1
    • 1 $2.51
    • 10 $2.51
    • 100 $2.36
    • 1000 $2.14
    • 10000 $2.14
    		Buy Now

    HGTH12N40C1 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HGTH12N40C1 Harris Semiconductor 10A and 12A, 400V and 500V N-Channel IGBT Original PDF
    HGTH12N40C1 Intersil 10A, 12A, 400V and 500V N-Channel IGBTs Original PDF
    HGTH12N40C1D Harris Semiconductor 12A, 400V and 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode Original PDF

    HGTH12N40C1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HGTH12N40C1D

    Abstract: HGTH12N40E1D HGTH12N50C1D HGTH12N50E1D G12N40E1D
    Text: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs COLLECTOR


    Original     		PDF HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC HGTH12N50E1D HGTH12N40C1D HGTH12N40E1D HGTH12N50C1D G12N40E1D

    g10n50c1

    Abstract: G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1
    Text: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs


    Original     		PDF HGTP10N40C1, HGTH12N40C1, O-218AC O-220AB HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40E1, g10n50c1 G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1

    HGTH12N40E1D

    Abstract: HGTH12N40C1D HGTH12N50C1D HGTH12N50E1D 50uh
    Text: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs


    Original     		PDF HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC HGTH12N50E1D voltage260) HGTH12N40E1D HGTH12N40C1D HGTH12N50C1D 50uh

    g10n50c1

    Abstract: G10N50E1 ge 40e1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N40E1
    Text: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs GATE COLLECTOR


    Original     		PDF HGTP10N40C1, HGTH12N40C1, O-218AC O-220AB HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40E1, g10n50c1 G10N50E1 ge 40e1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N40E1

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    pic 16 f 888

    Abstract: 12N50c
    Text: CU H A R R IS HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IG B T s with Anti-Parallel Ultrafast D iodes Aprii 1995 Features Package • 12A, 400V and 500V J E D E C TO-218AC • V C E O N : 2 -5 V M a x • T FALL: 1 m s , 0 .5 ^ 8


    OCR Scan     		PDF HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC AN7254 AN7260) 100AJ pic 16 f 888 12N50c

    12N50E

    Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
    Text: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.


    OCR Scan     		PDF 0N40C1, HGTH12N40C1, -218A -220A HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, 12N50E 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40

    kc 637

    Abstract: No abstract text available
    Text: HARRIS SEÎIICOND SECTOR m U U HARRIS S E M I C O N D U C T O R bßE » • M3D2271 D O S D n S HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features


    OCR Scan     		PDF M3D2271 HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, O-218AC M302271 HGTH12N40C1 HGmi2N40C1 HGTP10N40C1 kc 637

    pj 809

    Abstract: PJ 969 diode PJ 986 diode 047 pj 986 diode EM- 534 motor PJ 969 GE 639
    Text: fffi HARRIS C iI s E M , co N D u cToB HGTH12N40C1D, HGTH12N40E1D HGTH12N50C 1D , HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features • JEDEC TO-218AC TOP VIEW 12 Amp, 400 and 500 Volt • V ce ON ‘ 2.5V Max.


    OCR Scan     		PDF HGTH12N40C1D, HGTH12N40E1D HGTH12N50C HGTH12N50E1D O-218AC HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D pj 809 PJ 969 diode PJ 986 diode 047 pj 986 diode EM- 534 motor PJ 969 GE 639

    hgtm

    Abstract: HGTM12N40E1
    Text: HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 HARIRIS SEMICONDUCTOR 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features HGTH-TYPES JEDEC TO-21BAC TOP VIEW • 10A and 12A, 400V and 500V • V CE ON


    OCR Scan     		PDF HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, O-21BAC T0-220A O-204AA HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, hgtm HGTM12N40E1

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEIUCON» SECTOR bö E B M3D2S71 G0 S0 2? i » 72T HHAS HARRIS HGTH12N40C1D, HGTH12N40E1D s E M , c o N D u c T o R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features •


    OCR Scan     		PDF M3D2S71 HGTH12N40C1D, HGTH12N40E1D HGTH12N50C1D, HGTH12N50E1D O-218AC 40E1D/50E1D D/50C1D AN7254 AN7260)

    HGTH20N40E1D

    Abstract: TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide
    Text: HARRIS IGBT PRODUCT LINE Selection Guide IGBTs CO HARRIS IGBT PRODUCT LINE Continued 1. Icm = maximum continuous current rating at Tc = +90°C. 2. ICM = maximum pulsed current rating. 3. tp measured at Tc = +150°C. Selection Guide SHADING Indicates DEVELOPMENTAL PRODUCTS


    OCR Scan     		PDF O-220AB HGTP6N40E1D HGTP10N40F1D HGTP10N40E1D HGTP10N40C1D HGTH12N40E1D HGTH12N40C1D HGTH20N40E1D HGTH20N40C1D HGTP6N50E1D TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT