Untitled
Abstract: No abstract text available
Text: GC1706D-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7pì C1/C2 Min. Capacitance Ratio5.9 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.1100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C
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GC1706D-
Voltage60
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Untitled
Abstract: No abstract text available
Text: GC1706B-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7pì C1/C2 Min. Capacitance Ratio5.9 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.1100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C
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GC1706B-
Voltage60
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Untitled
Abstract: No abstract text available
Text: GC1706-30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7p C1/C2 Min. Capacitance Ratio5.9 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.1.6k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C
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GC1706-30
Voltage60
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Untitled
Abstract: No abstract text available
Text: GC1706E-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7pì C1/C2 Min. Capacitance Ratio5.9 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.1100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B
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GC1706E-
Voltage60
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Untitled
Abstract: No abstract text available
Text: GC1706A-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7pì C1/C2 Min. Capacitance Ratio5.9 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.1100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B
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GC1706A-
Voltage60
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Untitled
Abstract: No abstract text available
Text: GC1706F-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7pì C1/C2 Min. Capacitance Ratio5.9 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.1100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I
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GC1706F-
Voltage60
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Untitled
Abstract: No abstract text available
Text: GC1706T-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7pì C1/C2 Min. Capacitance Ratio5.9 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.1100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I
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GC1706T-
Voltage60
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Untitled
Abstract: No abstract text available
Text: GC1706-35 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7p C1/C2 Min. Capacitance Ratio5.9 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.1.6k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B
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GC1706-35
Voltage60
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Untitled
Abstract: No abstract text available
Text: GC1706-36 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7p C1/C2 Min. Capacitance Ratio5.9 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.1.6k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleDO-20var
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GC1706-36
Voltage60
StyleDO-20var
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Untitled
Abstract: No abstract text available
Text: GC1706H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7pì C1/C2 Min. Capacitance Ratio5.9 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.1100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew
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GC1706H-
Voltage60
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Untitled
Abstract: No abstract text available
Text: GC1706EE-+2 Diodes Dual Varactor Diode with Common Anode Ct{Cj} Nom. F Junction Cap.1.4pì C1/C2 Min. Capacitance Ratio5.9 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.1100 P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-T Mounting StyleS
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GC1706EE-
Voltage60
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Untitled
Abstract: No abstract text available
Text: GC1700A – GC1720 TM CONTROL DEVICES 60 Volt Abrupt Junction Tuning Varactors RoHS Compliant DESCRI PT I ON K EY FEAT URES The GC1700 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 60 Volt silicon varactor.
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GC1700A
GC1720
GC1700
2002/95/EC.
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GC1713
Abstract: GC1700 GC1700A GC1701 GC1702 GC1703 GC1704 GC1705 GC1706 GC1720
Text: GC1700A – GC1720 TM CONTROL DEVICES 60 Volt Abrupt Junction Tuning Varactors RoHS Compliant DESCRIPTION KEY FEATURES The GC1700 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 60 Volt silicon varactor.
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GC1700A
GC1720
GC1700
2002/95/EC.
a-01-19
GC1713
GC1700A
GC1701
GC1702
GC1703
GC1704
GC1705
GC1706
GC1720
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varactor
Abstract: GC1700 GC1700A GC1701 GC1702 GC1703 GC1704 GC1705 GC1706 GC1707
Text: TOC Tuning Varactors 60 VOLT ABRUPT JUNCTION VARACTOR DIODES RATINGS DESCRIPTION The GC1700 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 60 Volt silicon varactor. Minimum Voltage breakdown: 60 V at 10µA max
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GC1700
varactor
GC1700A
GC1701
GC1702
GC1703
GC1704
GC1705
GC1706
GC1707
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BUH517
Abstract: GC1706
Text: SGS-THOMSON * 7# BUH517 mo CRT HORIZONTAL DEFLECTION HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR • HIGH BREAKDOWN VOLTAGE CAPABILITY . FULLY INSULATED PACKAGE FOR EASY MOUNTING ■ LOW SATURATION VOLTAGE . HIGH SWITCHING SPEED . COMPLETE CHARACTERIZATION OF
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BUH517
BUH517
GC1706
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GC1700
Abstract: GC1700A GC1701 GC1702 GC1703 GC1704 GC1705 GC1706 GC1713
Text: .LORAL niCROIilAVE-FSI SIE D • 5SÖQ13D 0000455 OSO 60-VOLT SILICON TUNING VARACTORS DESCRIPTION The GC1700 series tuning varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 60 volt tuning diodes. A unique silicon dioxide passivation process assures
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0Q00455
GC1700
SSaQ13n
GC1700A
GC1701
GC1702
GC1703
GC1704
GC1705
GC1706
GC1713
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GC1700
Abstract: GC1700A GC1701 GC1702 GC1703 GC1704 GC1705 GC1706 GC1707 Loral
Text: LORAL/FREÛUENCY/SEMICOND ND 96D 00 799 D 6O-VOLT ^ D • SSTTbEl 0000711 0 SILICON TUNING VARACTORS D E SC R IP T IO N The G C1700 series tuning varactors are silicon abrupt ¡unc tion devices. They offer the highest Q and lowest resistance available in 60 volt tuning diodes.
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D0007clcj
GC1700
GC1700A
GC1701
GC1702
GC1703
GC1704
GC1705
GC1706
GC1707
Loral
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CT908
Abstract: 709ha c1913 GC1713 ha1711 C1706 Ct609 c1507 f709H MV167
Text: electronics inc. ce o le e MICROWAVE VARACTOR DIODES ABRUPT - HYPERABRUPT GC S * r ie t G C 1 5 0 0 -G C 151 4 GC1 $00*GC 1609 GC1 702-GC171 7 H A 1 7 0 2 -H A 1 7 1 7 M V 1 t 5 S 'M V 1 870 (GIGA-CAP HA ELEC T R IC A L CHARACTERISTICS (T a = 25°C unless otherwise noted)
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702-GC171
CT908
709ha
c1913
GC1713
ha1711
C1706
Ct609
c1507
f709H
MV167
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Untitled
Abstract: No abstract text available
Text: TUNING VARACTORS 60-VOLT SILICON TUNING VARACTORS DESCRIPTION 100 The GC1700 series tuning varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 60 volt tuning diodes. A unique silicon dioxide passivation process assures
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60-VOLT
GC1700
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C1708
Abstract: gc1602 GC1713
Text: \Æ HYPERABRUPT - ABRUPT UHF-MICROWAVE TUNING DIODES electronics inc designed for electronic tuning and control applications in the UHF and lower microwave frequency ranges. S E R IE S M V205 M V206 L P 1 0 1 4 -1 0 3 8 E P I Of 4 *1038 • LOW IN D U CTA N C E
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GG0D445
C1708
gc1602
GC1713
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