Untitled
Abstract: No abstract text available
Text: HE404B/HEM404B BOWEI Broadband VCO BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency vs Tuning Voltage Frequency MHz 2200 Features ●Low phase noise ●Hyperabrupt varactor 1980 1760 1540 1320 broad tuning bandwith ●Perfect tuning linearity
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Untitled
Abstract: No abstract text available
Text: HE402B/HEM402B BOWEI Broadband VCO BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency MHz Frequency vs Tuning Voltage Features ●Low phase noise ●Hyperabrupt varactor octave bandwidth ●Perfect tuning linearity ●Reliable thin film hybrid construction
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GC15000
Abstract: TM 937 GC15001 GC15001-00 GC15002-00 GC15003-00 GC15004-00 GC15013 GC15002
Text: GC15001 – GC15013 TUNING DIODES Frequency Linear Tuning Varactors TM RoHS Compliant KEY FEATURES A Frequency Linear Tuning Varactor FLTVAR is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications.
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GC15001
GC15013
GC15xxxx
GC15000
TM 937
GC15001
GC15001-00
GC15002-00
GC15003-00
GC15004-00
GC15013
GC15002
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car central lock
Abstract: Car Central lock system circuit diagram of car central lock system TH71082
Text: TH71082 868/915MHz ASK Transmitter / LO Source Features ! Fully integrated, PLL-stabilized VCO ! Flexible frequency range from 800 MHz to 930 MHz ! ASK achieved by on/off keying of internal power amplifier ! FM possible with external varactor ! Wide power supply range from 2.2 V to 5.5 V
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TH71082
868/915MHz
QS9000,
ISO14001
TH71082
car central lock
Car Central lock system
circuit diagram of car central lock system
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MV1403
Abstract: 210PF
Text: MV1403 TUNING VARACTOR DESCRIPTION: The ASI MV1403 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 140 – 210pF • High Q: 200 Min. Millimeters MAXIMUM RATINGS 12 V V I 250 mA PDISS
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MV1403
MV1403
D0-204AA
210pF
Ct-2/Ct-10
210PF
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Untitled
Abstract: No abstract text available
Text: POWER GENERATION DIODES Selection guide POWER GENERATION DIODES Selection Guide PAGE STEP RECOVERY DIODES - STANDARD 12-42 - SURFACE MOUNT PLASTIC PACKAGES 12-43 SILICON MULTIPLIER VARACTORS 12-40 Vol. 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.com
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step recovery diode
Abstract: No abstract text available
Text: POWER GENERATION DIODES Step recovery diodes and multiplier varactor applications STEP RECOVERY DIODES AND MULTIPLIER VARACTOR APPLICATIONS A Step Recovery Diode SRD generates pulses that can be used to multiply frequencies, and to set up reference points, e.g. for synchronizing test instruments.
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Abstract: No abstract text available
Text: DATA SHEET SMV121x Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs High-volume commercial systems Features High capacitance ratio: C1V/C4V = 5 typical Packages rated MSL1, 260 °C per JEDEC J-STD-020 Description
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SMV121x
J-STD-020
2000tside
200057H
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mv1404
Abstract: No abstract text available
Text: MV1404 TUNING VARACTOR DESCRIPTION: The ASI MV1404 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 90 – 144pF • High Q: 200 Min. Millimeters MAXIMUM RATINGS 12 V V I 250 mA PDISS
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MV1404
MV1404
D0-204AA
144pF
Ct-2/Ct-10
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DH292
Abstract: No abstract text available
Text: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.
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DH294
DH200
DH270
DH110
DH293
DH252
DH256
DH292
DH267
M208b
DH292
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Si4114G-BM
Abstract: No abstract text available
Text: Si4114G RF S Y N T H E S I Z E R W I T H I N T E G R A T E D VCO S F O R D I R E C T C O N V E R S I O N GSM AND GPRS WIRELESS COMMUNICATIONS Features M -B G Integrated VCOs, loop filters, varactors, and resonators Minimal 2 external components required
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Si4114G
28-lead
Si4114G-BM
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Si4133-GT
Abstract: SI4133-D-GM Si4133-GM si4133-d-gt SI4112-D-GT SI4122DG Si4113 Si4122 Si4123 Si4133
Text: Si4133 Si4123/22/13/12 DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS FEATURES Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz IF synthesizer IF: 62.5 to 1000 MHz Integrated VCOs, loop filters, varactors, and resonators
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Si4133
Si4123/22/13/12
24-pin
28-lead
Si4133-GT
SI4133-D-GM
Si4133-GM
si4133-d-gt
SI4112-D-GT
SI4122DG
Si4113
Si4122
Si4123
Si4133
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ci 740
Abstract: 1C45 DH744
Text: SILICON TUNING VARACTORS This series o f high Q epi-junction m icrow ave tuning varactors 45 V incorporates a passivated mesa tech n olog y. It is well suited for fre q u e n cy tuning a pp lica tio ns up to X band. CHIP AND PACKAGED DIODES CHIP OIODES TUNING RATIO
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699h
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: EN 699H , SAHYO SVC321SPA N 0 .6 9 9 H Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features • The SVC321SPA is a varactor diode with a good linearity and high capacitance ratio that is capable of
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SVC321SPA
SVC321SPA
10juA
V153-0
699h
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Discrete Semiconductors
Abstract: passive rf products
Text: GaAs RF ICs and Modules Index 03Alpha ~ JC ONEX A NT GaAs RF ICs and Modules. 4 Amplifiers. 9 Discrete Semiconductors . 12 Varactor
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03Alpha
Discrete Semiconductors
passive rf products
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74008
Abstract: 74067 74004 74016 74220 c 74067 cI 74150 74470 ci 74390 74006
Text: •'<% SILICON TUNING VARACTORS / This series o f high tuning ratio e pi-ju nctio n m icro w a ve tuning varactors 90 V incorporates a passivated mesa te ch n o lo g y. It is well suited for fre q u e n cy tuning a p p lica tio n s up to L b an d . CHIP AND
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am varactor
Abstract: KV1583A KV1581 KV1581A-3
Text: AM Varactor Diodes Part no. KV1563M Capacitance pF VRmax (V) min 428.0 20 typ 100.0 20.0 428.0 KV1563BM 20 27.0 506.0 100.0 20.0 428.0 KV1564M KV1580 KV1580A-1 KV1580NT KV1581 KV1581A-2 KV1581A-3 KV1582M KV1583A KV1583BM 20 30 30 30 30 30 30 30 30 30 max
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KV1563M
KV1563BM
KV1564M
KV1580
KV1580A-1
KV1580NT
KV1581
OT-23L
O-92N
OT-23
am varactor
KV1583A
KV1581
KV1581A-3
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GVD30503-001
Abstract: No abstract text available
Text: Preliminary Data - January 1999 GVD30500 SERIES SPRAGUE-GOODMAN ELECTRONICS. INC. WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 25 V min Maximum reverse leakage current (at -20 V) at 25“C: 0.05 pA DC
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GVD30500
GVD30501-004
GVD30502-004
GVD30503-004
GVD30504-004
GVD30501-001
GVD30502-001
GVD30503-001
GVD30504-001
OT-23
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silicon epitaxial mesa diode
Abstract: GVD1404-001
Text: Preliminary Data - January 1999 GVD1400 SERIES SPRAfilli-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC
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GVD1400
GVD1401-004
GVD1404-004
GVD1401-001
GVD1404-001
OT-23
silicon epitaxial mesa diode
GVD1404-001
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Untitled
Abstract: No abstract text available
Text: Preliminary Data - January 1999 GVD30600 SERIES SPRAGIH-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS « Mesa Epitaxial Silicon Construction • Silicon Dioxide Passivated > Superior Wide Range Linear Characteristics
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GVD30600
GVD30601-004
GVD30602-004
GVD30603-004
GVD30601-001
GVD30602-001
GVD30603-001
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VF600
Abstract: Valpey-Fisher VF700 VF750C VF670
Text: VF600 Series DISCRETE VOLTAGE CONTROLLED CRYSTAL OSCILLATORS VCXO VF700 Series DISCRETE DIGITALLY COMPENSATED CRYSTAL OSCILLATORS (DCXO) In the circuitry of a Valpey-Fisher Voltage C ontrolled Crystal O scillator a varactor diode is used in parallel with a discrete
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VF600
20VDC
VF700
VF650
VF670
VFHS670
VF750A
VF750B
VF750C
VF760A
Valpey-Fisher
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Frequency Generator 1MHz
Abstract: step recovery diode New England Microwave NE12003
Text: 6563403 NEW ENGLAND MICROWAVE. . bh ' 66C 00087 DE | b S b 3 4 Q 3 0DD0DÛ7 I T ^ o n -iS 1 NÉW ÉNGLM1D MICROWWe CORPORATION 26 HAMPSHIRE DRIVE, HUDSON, NEW HAMPSHIRE 03051 603 883-2900 STEP RECOVERY AND MULTIPLIER DIODES NE12000 The NE12000 step recovery and multiplier diodes are epitaxial silicon varactors which achieve high
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5b3403
0D00DÃ
NE12000
NE12000
syn8-11
Frequency Generator 1MHz
step recovery diode
New England Microwave
NE12003
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varactor diode
Abstract: No abstract text available
Text: Hyperabrupt Varactor Diode Outline Drawing Features: • ■ ■ VHF to UHF Operation Linear Octave Tuning from 3 to 20 volts Surface Mountable SOT-23 Package Outline - Single diode SMV1200-04A - Two diodes back to back (SMV1200-04B) High Reliability ■
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OT-23
SMV1200-04A)
SMV1200-04B)
SMV1200-04
100mA
250mW
50MHz
varactor diode
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diode oat
Abstract: No abstract text available
Text: Hyperabrupt Varactor Diode Outline Drawing Features: • ■ ■ ■ ■ V H F and UHF Operation Low Series Resistance Surface mountable S O T-23 Package - Single diode SM V1204-60A - Two diodes back to back (S M V 1204-60B ) Linear Tuning from 0 to 6 volts. Ideal
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V1204-60A
1204-60B
J0062
100mA
50MHz
diode oat
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