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    GATE LOGICAL AND Search Results

    GATE LOGICAL AND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    54H11DM Rochester Electronics LLC AND Visit Rochester Electronics LLC Buy
    MC503FB2 Rochester Electronics LLC MC503 - AND-OR-INVERT Gate Visit Rochester Electronics LLC Buy
    74H08PC Rochester Electronics LLC 74H08 - AND Gate, TTL, PDIP14 Visit Rochester Electronics LLC Buy
    MC54H08L Rochester Electronics LLC 54H08 - TTL AND Gate Visit Rochester Electronics LLC Buy

    GATE LOGICAL AND Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MM74C30N

    Abstract: MM54C30J MM74C30 MM54C30 MM74C30J AN-90 C1995 J14A
    Text: MM54C30 MM74C30 8-Input NAND Gate General Description Features The logical gate employs complementary MOS CMOS to achieve wide power supply operating range low power consumption and high noise immunity Function and pin out compatibility with series 54 74 devices minimizes design


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    MM54C30 MM74C30 MM74C30N MM54C30J MM74C30J AN-90 C1995 J14A PDF

    XC6200

    Abstract: XC009 PN16 XC6209 XC6216 XC6264 C031 vhdl code up down counter
    Text:  XC6200 Field Programmable Gate Arrays Table Of Contents Features Description Architecture Logical and Physical Organization Additional Routing Resources Magic Wires Global Wires Function Unit Cell Logic Functions Routing Switches Clock Distribution Clear Distribution


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    XC6200 XC6200 XC6216 -2PC84C -40oC 100oC -55oC 125oC 84-Pin HT144 XC009 PN16 XC6209 XC6264 C031 vhdl code up down counter PDF

    XC6200

    Abstract: p61 s43 XC6264 w1p77 w56 transistor BUF C038 N48 pqfp Package Typ P194 B1 121 W97 diode ak38
    Text:  XC6200 Field Programmable Gate Arrays Table Of Contents Features Description Architecture Logical and Physical Organization Additional Routing Resources Magic Wires Global Wires Function Unit Cell Logic Functions Routing Switches Clock Distribution Clear Distribution


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    XC6200 XC6200 XC6216 -2PC84C 84-Pin HT144 144-Pin BG225 225-Pin HQ240 p61 s43 XC6264 w1p77 w56 transistor BUF C038 N48 pqfp Package Typ P194 B1 121 W97 diode ak38 PDF

    MM54C30J

    Abstract: No abstract text available
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 10/19/95 Last Update Date: 05/19/97 Last Major Revision Date: 04/02/97 MNMM54C30-X REV 1A0 8-INPUT NAND GATE General Description The logical gate employs complementary MOS CMOS to achieve wide power supply operating


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    MNMM54C30-X MM54C30 MM54C30J/883 MM54C30W/883 MIL-STD-883, MM54C30J PDF

    DM74S03

    Abstract: DM74S03MX M14A
    Text: Revised May 2000 DM74S03 Quad 2-Input NAND Gate with Open-Collector Outputs General Description Pull-Up Resistor Equations This device contains four independent gates each of which performs the logic NAND function. The open-collector outputs require external pull-up resistors for proper logical


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    DM74S03 DM74S03MX 14-Lead MS-120, 150THOUT DM74S03 DM74S03MX M14A PDF

    schema inverter

    Abstract: L6386 L6386 Phase Signal schema led table phase inverter schema induction heating schema AN1315 STGP3NB60HDFP STGP7NB60HDFP TS272
    Text: AN1315 APPLICATION NOTE L6386: 3-PHASE DEMO BOARD by G.P. Meloncelli Product Description The 3-Phase Demo Board is a reference kit for evaluation and design with the high voltage gate driver L6386. User must only provide the logical signals and the power supplies. The kit make easy to test the driver capability


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    AN1315 L6386: L6386. 00V-3 schema inverter L6386 L6386 Phase Signal schema led table phase inverter schema induction heating schema AN1315 STGP3NB60HDFP STGP7NB60HDFP TS272 PDF

    DM74LS26

    Abstract: DM74LS26M DM74LS26N M14A MS-001 N14A
    Text: Revised March 2000 DM74LS26 Quad 2-Input NAND Gate with High Voltage Open-Collector Outputs General Description Pull-Up Resistor Equations This device contains four independent gates each of which performs the logic NAND function. The open-collector outputs require external pull-up resistors for proper logical


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    DM74LS26 DM74LS26 DM74LS26M DM74LS26N M14A MS-001 N14A PDF

    DM74ALS

    Abstract: DM74ALS03B DM74ALS03BM DM74ALS03BN M14A N14A dm74als03bm fairchild
    Text: DM74ALS03B Quad 2-Input NAND Gate with Open Collector Outputs N3 IIL = total maximum input low current for all inputs tied to pull-up resistor General Description This device contains four independent gates, each of which performs the logic NAND function. The open-collector outputs require external pull-up resistors for proper logical operation.


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    DM74ALS03B DM74ALS DM74ALS03B DM74ALS03BM DM74ALS03BN M14A N14A dm74als03bm fairchild PDF

    TC534200F

    Abstract: UTC A11 TC534200P
    Text: TOSHIBA TC534200P/F SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT/524,288 WORD x 8 BIT CMOS MASK ROM Description The TC534200P/F is a 4,194,304 bit read only memory organized as 262,144 words by 16 bits when BYTE is logical high and organized as 524,288 words by 8 bits when BY I t is logical low.


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    TC534200P/F BIT/524 TC534200P/F 600mil 40-pin 525mil TC534200P TC534200F UTC A11 PDF

    TC5316200bP

    Abstract: TC5316200BP/BF
    Text: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.


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    TC5316200BP/BF TC5316200BP/BF 600mil 42-pin 44-pin TC5316200BP TC5316200BF PDF

    TC5316210

    Abstract: Tc5316210cf
    Text: TC5316210CP/CF TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 1 M WORD BY 16 BITS/2 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC5316210CP/CF is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and as 2,097,152 words by 8 bits when BYTE is logical low.


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    TC5316210CP/CF TC5316210CP/CF 216-bit 42-pin 44-pin 765TYP TC5316210 Tc5316210cf PDF

    Untitled

    Abstract: No abstract text available
    Text: TC5332410BF/BFT TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT 32 MBIT 1 M WORD BY 32 BITS/2 SILICON GATE CMOS WORD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.


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    TC5332410BF/BFT TC5332410BF/BFT 432-bit 70-pin PDF

    TC534200CF

    Abstract: No abstract text available
    Text: TOSHIBA TC534200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 256 K WORD BY 16 BITS/512 K WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC534200CP/CF is a 4,194,304-bit Read Only Memory organized as 262,144 words by 16 bits when BYTE is logical high, and as 524,288 words by 8 bits when BYTE is logical low.


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    TC534200CP/CF/CFT BITS/512 TC534200CP/TC534200CF 304-bit TC534200CP/CF 40-pin 44-pin TC534200CF PDF

    TC5332200AF

    Abstract: TC53322
    Text: TO SH IB A TC5332200AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 2,097,152 WORD BY 16 BITS/4,194,304 WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC53322Ö0AF/AFT is a 33,554,432-bit Read Only Memory organized as 2,097,152 words by 16 bits when BYTE is logical high, and as 4,194,304 words by 8 bits when BYTE is logical low.


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    TC5332200AF/AFT TC53322 432-bit TC5332200AF/AFT 44-pin 765TYP TC5332200AF PDF

    TC5316200CP

    Abstract: TC5316200CF
    Text: T O S H IB A TC5316200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 1 M WORD BY 16 BITS/2 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC5316200CP/CF/CFT is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and as 2,097,152 words by 8 bits when BYTE is logical low.


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    TC5316200CP/CF/CFT TC5316200CP/CF/CFT 216-bit 42-pin 44-pin TC5316200CP TC5316200CF PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC5332410BF/BFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.


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    TC5332410BF/BFT TC5332410BF/BFT 432-bit 70-pin PDF

    TC5316200CP

    Abstract: tc5316200
    Text: TOSHIBA TC5316200CP/CF/CFT PRELIMINARY SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM Description The TC5316200CP/CF/CFT is a 16,777,216 bit read only memory organized as 1,048,576 w ords by 16 bits when BY I t is logical high, or as 2,097,152 w ords by 8 bits when BYTE is logical low.


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    TC5316200CP/CF/CFT TC5316200CP/CF/CFT 600mil 42-pin 44-pin 400mil TC5316200CP tc5316200 PDF

    MIL-STD-806

    Abstract: 4-1 MULTIPLEXER IC
    Text: 4-1 How to Read MIL Type Logic Symbols Table 4-1 shows the MIL type logic symbols used in high-speed CMOS IC. This logical chart Is based on MIL-STD-806. Clocked inverter and transmission gate employ specific symbols. Table 4-1 Circuit Function M IL Logic Symbols


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    MIL-STD-806. MIL-STD-806 4-1 MULTIPLEXER IC PDF

    MIL-STD-806

    Abstract: 4-1 MULTIPLEXER IC
    Text: 4-1 H o w to Read M IL Type Logic Sym bols Table 4-1 shows the MIL type logic symbols used in high-speed CMOS IC. This logical chart is based on MIL-STD-806. Clocked inverter and transmission gate employ specific symbols. Table 4-1 Circuit Function MIL Logic Symbols


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    MIL-STD-806. MIL-STD-806 4-1 MULTIPLEXER IC PDF

    TC531621

    Abstract: No abstract text available
    Text: TOSHIBA TC5316210CP/CF PRELIMINARY SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM Description TheTC 5316210C P/C F is a 16,777,216 bit read only m em ory organized as 1,048,576 w ords by 16 bits when BYTE is logical


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    TC5316210CP/CF 5316210C TC5316210CP/CF 5316210CP/CF 600mil 42-pin 44-pin TC531621OCP/CF TC531621 PDF

    MIL-STD-806B

    Abstract: MIL-STD-806
    Text: 6 . HOW TO READ MIL TYPE LOGIC SYMBOLS AND TRUTH TABLES 6 -1 H ow to read M I L type L o gic S y m b o ls Table 6-1 shows the MIL type logic symbols used in high-speed CMOS IC. This logical chart is based on MIL-STD-806B. and clocked inverter and transmission gate employ specific symbols.


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    MIL-STD-806B. MIL-STD-806B MIL-STD-806 PDF

    TC534200CF

    Abstract: No abstract text available
    Text: TOSHIBA TC534200CP/CF P R E LIM IN A R Y SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT/524,288 WORD x 8 BIT CMOS MASK ROM Description The TC534200CP/CF is a 4,194,304 bit read only memory organized as 262,144 w ords by 16 bits when BY 11 is logical high,


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    TC534200CP/CF BIT/524 TC534200CP/CF TC534200C 534200CP/CF 600mil 40-pin 525mil TC534200CP TC534200CF PDF

    DM7819

    Abstract: DM7819J DM7819N DM7819W DM8819J DM8819N DM8819W SN5409
    Text: D M 781 9/D M 8819 NS Level Translators/Buffers D M 7 8 1 9 /D M 8 8 1 9 quad 2 -in p u tT T L -M O S AND gate general description The DM7819 is the high output voltage version of the SN 5409. Its open-collector outputs may be "pulled-up" to +14 volts in the logical " 1 " state


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    DM7819/DM8819 DM7819 SN5409. DM7819J DM8819J DM7819N DM8819N DM7819W DM8819W DM8819J DM8819N SN5409 PDF

    TC538200AP

    Abstract: TC538200AF TC538200 TC538200A
    Text: TOSHIBA TC538200AP/AF SILICON STACKED GATE CMOS 524,288 WORD x 16 BIT/1,048,576 WORD x 8 BIT CMOS MASK ROM D escription The TC538200AP/AF or as 1,048,576 w ords by The TC538200AP/AF The TC538200AP/AF is a 8,388,608 bit read only m em ory organized as 524,288 w ords by 16 bits when BYTE is logical high,


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    TC538200AP/AF TC538200AP/AF 600mil 42-pin 44-pin TC538200AP TC538200AF TC538200AF TC538200 TC538200A PDF