GAN 100 WATT Search Results

GAN 100 WATT Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

GAN 100 WATT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
Untitled Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
Untitled Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
CGHV96100F2 Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
Untitled Abstract: No abstract text available Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1	PDF
40VPulse Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse	PDF
CGHV96100F1 Abstract: taconic Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 taconic	PDF
GaN 100 watt Abstract: No abstract text available Text: TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 50 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 2 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC	Original	TGF2023-20 TGF2023-20 DC-18 0007-inch GaN 100 watt	PDF
GaN 100 watt Abstract: TGF2023-20 GaN matching 100 watt Text: TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 50 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 2 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC	Original	TGF2023-20 TGF2023-20 DC-18 0007-inch GaN 100 watt GaN matching 100 watt	PDF
TGF2023-20 Abstract: s32p Text: TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 50 dBm Nominal Psat 55% Maximum PAE 8.5 dB Nominal Power Gain Bias: Vd = 28 - 35 V, Idq = 2 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC	Original	TGF2023-20 TGF2023-20 DC-18 0007-inch 3A001 s32p	PDF
2735GN-100 Abstract: transistor 3,5Ghz, power 100w s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ power transistor gan s-band Text: 2735GN-100 Rev 1 2735GN – 100M 100 Watts - 60 Volts, 300 s, 10% 2700 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2735GN-100 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF	Original	2735GN-100 2735GN 55-QP transistor 3,5Ghz, power 100w s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ power transistor gan s-band	PDF
Untitled Abstract: No abstract text available Text: 2730GN-100L Rev 1 2730GN – 100L 100 Watts, 3 mS , 30%, +55 Volts 2700 - 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2730GN-100M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF	Original	2730GN-100L 2730GN 55-QP 2730GN-100M 55-QP	PDF
Untitled Abstract: No abstract text available Text: 2729GN-500V 500 Watts - 50 Volts, 100 us, 10% S-Band Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 2729GN-500V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 11.2 dB	Original	2729GN-500V 55-KR 2729GN-500V	PDF
Untitled Abstract: No abstract text available Text: TGS2355-SM 0.5-6 GHz 100 Watt GaN Switch Applications • • • • • • Commercial and Military Radar Communications Electronic Warfare Test Instruments General Purpose High Power Switching Product Features • • • • • • • • • Functional Block Diagram	Original	TGS2355-SM TGS2355-SM TQGaN25	PDF

Untitled Abstract: No abstract text available Text: 2729GN-400 Rev 1 2729GN-400 400 Watts - 65 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 2729GN-400 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 11dB gain, 400 Watts	Original	2729GN-400 2729GN-400 55-KR 55-KR	PDF
circuit diagram board Abstract: 55-QP Text: 2729GN-150 Rev 1 2729GN – 150 150 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-150 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF	Original	2729GN-150 2729GN 55-QP circuit diagram board	PDF
Untitled Abstract: No abstract text available Text: 2729GN-270 Rev 2 2729GN – 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF	Original	2729GN-270 2729GN 55-QP 55-QP	PDF
Untitled Abstract: No abstract text available Text: 2729GN-150 Rev 1 2729GN – 150 150 Watts - 60 Volts, 100 µs, 10% Radar 2700 - 2900 MHz CASE OUTLINE 55-QP Common Source GENERAL DESCRIPTION The 2729GN-150 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF	Original	2729GN-150 2729GN 55-QP 55-QP	PDF
j372 Abstract: radar circuit 2729GN J294 power transistor gan s-band 2729GN-270 J340 Text: 2729GN-270 Rev 2 2729GN – 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF	Original	2729GN-270 2729GN 55-QP j372 radar circuit 2729GN J294 power transistor gan s-band J340	PDF
nptb00004 Abstract: NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100 Text: NPTB00004 Datasheet Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz	Original	NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100	PDF
PIMD3 Abstract: No abstract text available Text: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz	Original	NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 PIMD3	PDF
PIMD3 Abstract: No abstract text available Text: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz	Original	NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 PIMD3	PDF
Untitled Abstract: No abstract text available Text: TGS2355 0.5-6 GHz High Power GaN Switch Applications • High Power Switching Product Features Functional Block Diagram Frequency Range: 0.5 - 6 GHz Insertion Loss: < 1.3 dB Power Handling: 100 W Isolation: 40 dB typical Control Voltages: 0 V/-40 V from either side of	Original	TGS2355 TGS2355	PDF
EPC2001 Abstract: EPC Gan transistor FX-93 FET MARKING QG Text: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure	Original	EPC2001 EPC2001 EPC Gan transistor FX-93 FET MARKING QG	PDF

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GAN 100 WATT Search Results

GAN 100 WATT Result Highlights (5)

GAN 100 WATT Datasheets Context Search

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CGHV96100F2

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40VPulse

CGHV96100F1

GaN 100 watt

GaN 100 watt

TGF2023-20

2735GN-100

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circuit diagram board

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j372

nptb00004

PIMD3

PIMD3

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EPC2001