3906 PNP TRANSISTOR
Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET
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AN-0002
3906 PNP TRANSISTOR
irlml6401tr
LMK316BJ475KL
MAX881
AN-0002
MAX881R
RFS1003
RFS1006
AN0002
"Dual PNP Transistor" temperature compensation
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MACH ZEHNDER driver
Abstract: "InP HBT"
Text: SDA-3000 GaAs Distributed Amplifier SDA-3000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 3.100mmx1.450mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET 3 InGaP HBT Si BiCMOS Si CMOS
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SDA-3000
100mmx1
450mmx0
102mm
24GHz
SDA-3000
DS090603
MACH ZEHNDER driver
"InP HBT"
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MGF1951A
Abstract: MGF1951A-01 MGF1951
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES
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MGF1951
MGF1951A
MGF1951A
13dBm
12GHz
MGF1951A-01
MGF1951A-01
MGF1951
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Untitled
Abstract: No abstract text available
Text: MMIC AP201 Product Features Application • 50 ~ 1000MHz • GaAs MESFET MMIC • 40dBm Output IP3 • 14dB Gain • 21dBm P1 dB • SOT-89 Package • High Linearity Drive Amplifier Description Package Type: SOT-89 AP201 is a gain block amplifier designed with GaAs MESFET MMIC in a low cost SOT-89 package.
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AP201
1000MHz
40dBm
21dBm
OT-89
OT-89
AP201
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sot89 mmic 25
Abstract: ap201 mmic amplifier sot-89 mmic sot-89 AP-201 MESFET GaAs MMIC Gain Block sot-89
Text: MMIC AP201 Product Features Application • 50 ~ 1000MHz • GaAs MESFET MMIC • 40dBm Output IP3 • 14dB Gain • 21dBm P1 dB • SOT-89 Package • High Linearity Drive Amplifier Description Package Type: SOT-89 AP201 is a gain block amplifier designed with GaAs MESFET MMIC in a low cost SOT-89 package.
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AP201
1000MHz
40dBm
21dBm
OT-89
OT-89
AP201
sot89 mmic 25
mmic amplifier sot-89
mmic sot-89
AP-201
MESFET
GaAs MMIC Gain Block sot-89
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GaAs MESFET amplifier
Abstract: SDA-5000 SDA5000 sda 5000 SDA-5000 GaAs Distributed Amplifier RFMD microwave amplifier RFMD microwave amplifier hbt 10GHZ GAAS
Text: SDA-5000 GaAs Distributed Amplifier SDA-5000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features Optimum Technology Matching Applied 3 GaAs HBT GaAs MESFET 4 OUT VG2 2 InGaP HBT IN 1 SiGe BiCMOS
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SDA-5000
45mmx0
102mm
35GHz
SDA-5000
18dBm
100mA
DS090603
GaAs MESFET amplifier
SDA5000
sda 5000
SDA-5000 GaAs Distributed Amplifier
RFMD microwave amplifier
RFMD microwave amplifier hbt
10GHZ GAAS
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k MESFET S parameter
Abstract: MGF1953A MGF1953A-01 mesfet fet
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1953A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1953A is a 100mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power
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MGF1953A
MGF1953A
100mW
20dBm
12GHz
MGF1953A-01
Ga107
k MESFET S parameter
MGF1953A-01
mesfet fet
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k MESFET S parameter
Abstract: MGF1952A-01 MGF1952A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1952A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1952A is a 50mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power
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MGF1952A
MGF1952A
17dBm
12GHz
MGF1952A-01
k MESFET S parameter
MGF1952A-01
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MGF1954A-01
Abstract: k MESFET S parameter MGF1954A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1954A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1954A is a 200mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power
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MGF1954A
MGF1954A
200mW
23dBm
12GHz
MGF1954A-01
MGF1954A-01
k MESFET S parameter
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Untitled
Abstract: No abstract text available
Text: Product Description SCA-1 Stanford Microdevices’ SCA-1 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. 0.3-3 GHz, Cascadable GaAs MMIC Amplifier This amplifier is internally matched with typical VSWR of
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100mW
20dBm
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GaAs MESFET amplifier
Abstract: MAX4473 AN1800 APP1800 bias of GaAs MESFET MESFET Application
Text: Maxim/Dallas > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS Keywords: MESFETs, Gallium-Arsenide, GaAs MESFETs, current sense amps, current sensing, mesfet, metal semiconductor field effect transistors Dec 04, 2002 APPLICATION NOTE 1800 Smart IC Maintains Uniform Bias Current For GaAs MESFETs
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com/an1800
MAX4473:
AN1800,
APP1800,
Appnote1800,
GaAs MESFET amplifier
MAX4473
AN1800
APP1800
bias of GaAs MESFET
MESFET Application
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AG101
Abstract: No abstract text available
Text: The Communications Edge TM Application Note Product Information AG101 Temperature Effects on Reliability The AG101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs
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AG101
beh1000
1-800-WJ1-4401
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wj 75
Abstract: AG101 power amplifier mmic
Text: The Communications Edge TM Application Note Product Information AM1 Temperature Effects on Reliability The AM1 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs
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1-800-WJ1-4401
wj 75
AG101
power amplifier mmic
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Untitled
Abstract: No abstract text available
Text: S10040220P12 S10040220P12 GaAs Push Pull Hybrid 40MHz to 1000MHz Package: SOT-115J The S10040220P12 is a Hybrid Push Pull amplifier module. The part employs GaAs pHEMT die and GaAs MESFET die, and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance with
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S10040220P12
40MHz
1000MHz
OT-115J
S10040220P12
1000MHz.
450mA
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Untitled
Abstract: No abstract text available
Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied GaAs HBT VCC GaAs MESFET N/C InGaP HBT
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SPA1118Z
850MHz
SPA1118Z
DS111217
ECB-101161
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RFCA8818
Abstract: RFMD 1500
Text: RFMD . RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier The RFMD® RFCA8818 is a low noise, linear high performance GaAs MESFET MMIC amplifier. The RFCA8818 contains two amplifiers for use in wideband push-pull CATV amplifiers requiring
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RFCA8818
40MHz
1008MHz
RFCA8818
RFMD 1500
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900MHZ
Abstract: IPC-SM-782 RF6100-1
Text: RF6100-1 3V 900MHZ LINEAR POWER AMPLIFIER MODULE Typical Applications • 3V CDMA/AMPS Cellular Handset • Spread-Spectrum System • 3V CDMA20001/X Cellular Handset Product Description Optimum Technology Matching Applied 9 Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS
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RF6100-1
900MHZ
CDMA20001/X
RF6100-1
203mm
330mm
025mm
IPC-SM-782
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RFAM2790
Abstract: No abstract text available
Text: RFMD. RFAM2790—Integrated EDGE QAM Amplifier The RFMD RFAM2790 is an integrated amplifier designed for CATV head-end EDGE QAM application or as a push-pull amplifier in a traditional optical node lineup. The product employs GaAs pHEMT and GaAS MESFET technologies
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RFAM2790--Integrated
RFAM2790
46dBmV
40MHz
1003MHz.
RFAM2790
256QAM,
46dBmV,
12VDC
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AH101
Abstract: wj 75 AG101 AH102 AH11 Characteristic of mesfet mmic ah1
Text: The Communications Edge TM Application Note Product Information AH101 Temperature Effects on Reliability AH102 Included by Similarity The AH101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs
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AH101
AH102
1-800-WJ1-4401
wj 75
AG101
AH11
Characteristic of mesfet
mmic ah1
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wj 75
Abstract: c 596 AG101 AH11 AH22 AH1-1
Text: The Communications Edge TM Application Note Product Information AH11 Temperature Effects on Reliability AH22 Included by Similarity The AH11 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs
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de1000
1-800-WJ1-4401
wj 75
c 596
AG101
AH11
AH22
AH1-1
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Ablebond 36-2
Abstract: Multicore Solders
Text: MTLS LTD ^ T - 3 /- A 5 " Three Five Product Information GaAs MESFET P35-1105 This New Generation MESFET has been designed for improved performance and is ideally suited for: Applications • Low noise amplifiers 12GHz • Tube drive amplifiers • Low noise oscillators
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P35-1105
12GHz
P35-1105-0
Ablebond 36-2
Multicore Solders
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9820T1 The RF Small Signal Line GaAs MESFET AGC A m plifier The MRF9820T1 is a high performance GaAs AGC amplifier suitable for use in low noise front end amplifier or downconverter applications. The device
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MRF9820T1
MRF9820T1
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Untitled
Abstract: No abstract text available
Text: •'.ONI HTLS LTD ES 3?hûS01 DOOÜGTl S 16ML PLESSEY T-3>- A5" Three Five Product Information GaAs Dual Gate MESFET P 35-1310 The versatile dual gate MESFET has been designed for improved performance and is ideally suited for: Applications • Automatic gain control
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L to Ku Band Low Noise GaAs MESFET
Abstract: No abstract text available
Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B N0ISE FIGURE-a s s o c ia t e d - g a in vs. FREQUENCY
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NE67400
NE67483B
NE674is
L to Ku Band Low Noise GaAs MESFET
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