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    MGF1953A Search Results

    MGF1953A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGF1953A Mitsubishi Original PDF
    MGF1953A Mitsubishi Microwave Power MES FET Original PDF
    MGF1953A-01 Mitsubishi Original PDF

    MGF1953A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGF1953A

    Abstract: No abstract text available
    Text: October /2003 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1953A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF1953A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF1953A MGF1953A 20dBm 12GHz 3000pcs

    Untitled

    Abstract: No abstract text available
    Text: Aug. /2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1953A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF1953A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF1953A MGF1953A 20dBm 12GHz 100mA 3000pcs

    MGF1953A

    Abstract: No abstract text available
    Text: Aug. /2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1953A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF1953A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF1953A MGF1953A 20dBm 12GHz 100mA 3000pcs

    Untitled

    Abstract: No abstract text available
    Text: < Power GaAs FET > MGF1953A Leadless ceramic package DESCRIPTION The MGF1953A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB


    Original     		PDF MGF1953A MGF1953A 20dBm 12GHz 100mA 000pcs/reel

    k MESFET S parameter

    Abstract: MGF1953A MGF1953A-01 mesfet fet
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1953A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1953A is a 100mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power


    Original     		PDF MGF1953A MGF1953A 100mW 20dBm 12GHz MGF1953A-01 Ga107 k MESFET S parameter MGF1953A-01 mesfet fet

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original     		PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original     		PDF QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"