Nec K 872
Abstract: NE85001 NE8500100 NE8500100-RG NE8500100-WB NE8500199
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
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NE85001
NE8500199
NE8500100
NE8500100
Nec K 872
NE8500100-RG
NE8500100-WB
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7400A
Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions
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NE85002
Abstract: NE8500200 NE8500200-RG NE8500200-WB NE8500295 NE8500295-4 NE8500295-6 NE8500295-8
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.
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NE85002
NE8500295
NE8500200
NE8500200
NE8500200-RG
NE8500200-WB
NE8500295-4
NE8500295-6
NE8500295-8
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smd C1D
Abstract: marking code C1d SMD l0131 datasheet ic 4060 Q62702-L0132 BGV503 BGV903 marking c2d GPS09230 negative voltage regulator ic
Text: GaAs Support IC BGV503 / BGV903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV503, BGV903 – for cellular phones • BGV503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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BGV503
BGV903
BGV503,
BGV503:
BGV903:
BGV503)
BGV903)
P-TSSOP-10-2
smd C1D
marking code C1d SMD
l0131
datasheet ic 4060
Q62702-L0132
BGV903
marking c2d
GPS09230
negative voltage regulator ic
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marking code C1d SMD
Abstract: smd C1D lowpassfilter marking bgv MARKING CODE SMD IC 503
Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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503/BGV
P-TSSOP-10-1
GPS09184
marking code C1d SMD
smd C1D
lowpassfilter
marking bgv
MARKING CODE SMD IC 503
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marking code C1d SMD
Abstract: smd C1D Q62702-L0131 Q62702-L0132 marking bgv P-TSSOP-10-1 5v regulator c2pr
Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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503/BGV
P-TSSOP-10-1
GPS09184
marking code C1d SMD
smd C1D
Q62702-L0131
Q62702-L0132
marking bgv
P-TSSOP-10-1
5v regulator
c2pr
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Untitled
Abstract: No abstract text available
Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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503/BGV
P-TSSOP-10-2
GPS09230
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NE70083
Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007
Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,
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AN-PF-1007
NE430,
NE345L,
NE372
24-Hour
NE70083
NE372800
AN83901
NE71083
Matching Transformer - line matching transformed
AN-PF-1007
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NE70083
Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,
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AN-PF-1007
NE430,
NE345L,
NE372
NE70083
planar transformer theory
small signal GaAs FET
x-band microwave fet
NE71083
DLI-1988-1
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8712 RESISTOR
Abstract: NES1823M-180
Text: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 180 W of output power CW with high linear gain, high
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NES1823M-180
NES1823M-180
IMT2000
8712 RESISTOR
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NES1823S-90
Abstract: No abstract text available
Text: DATA SHEET GaAs FET NES1823S-90 90 W L, S-BAND SINGLE-END POWER GaAs FET DESCRIPTION The NES1823S-90 is a 90 W single-end type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 90 W of output power CW with high linear gain, high efficiency
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NES1823S-90
NES1823S-90
IMT2000
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J3780
Abstract: IMT-2000 NES1823M-240 J4083
Text: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT-2000 base station systems. It is capable of delivering 240 W of output power CW with high linear gain, high
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NES1823M-240
NES1823M-240
IMT-2000
J3780
J4083
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IMT-2000
Abstract: NES1823S-45
Text: DATA SHEET GaAs FET NES1823S-45 45 W L, S-BAND SINGLE-END POWER GaAs FET DESCRIPTION The NES1823S-45 is a 45 W single-end type GaAs FET designed for high power transmitter applications for WCDMA IMT-2000 base station systems. It operates at 12 V and is capable of delivering 45 W of output power (CW)
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NES1823S-45
NES1823S-45
IMT-2000)
IMT-2000
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NES1823M-240
Abstract: j3780
Text: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 240 W of output power CW with high
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NES1823M-240
NES1823M-240
IMT2000
j3780
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
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NE85001
NE8500199
NE8500100
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nec d 1590
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped elem ent matching network.
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NE85002
NE8500295
NE8500200
CODE-95
nec d 1590
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V4450A 4.4-5 .OGHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V4450A is an internally impedance-matched U n it: millimeters inches) GaAs power FET especially designed for use in 4.4~5.0GHz
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MGFC36V4450A
MGFC36V4450A
45dBc
M5M27C102P,
RV-15
16-BIT)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.
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NE85002
NE8500295
NE8500200
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177 7.1—7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M GFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7 .1 —7.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC40V7177
GFC40V7177
27C102P,
RV-15
16-BIT)
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GaAs SPDT IC FET
Abstract: SW-239TR MESFET Application
Text: Key Application Features of MMIC GaAs and Pin Diode* Switches Applications Features of PIN Diode and GaAs FET Switches In SOIC type plastic packages the GaAs FET switches can handle up M /A -COM manufactures both PIN diodes and GaAs FET sem icon able that operate to 3 GH z as analog attenuators, digital attenuators
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ATC100A
AT-210/AT-220
GaAs SPDT IC FET
SW-239TR
MESFET Application
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gaas fet marking AR
Abstract: No abstract text available
Text: Infineon tei hnoiosi*» GaAs Support 1C BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips - BGV 503, BGV 903 - for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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503/BGV
111111i
gaas fet marking AR
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12QHz
Abstract: FSX027X GaAs FET HEMT Chips fujitsu gaas fet
Text: FSX027X - GaAs FET & HEMT Chips FEATURES • Medium Power Output: P-|dB=24.5dBm Typ. @8.0GHz • High Power Gain: GidB=10dB(Typ.)@ 8.0GHz • Proven Reliability DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium
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FSX027X
FSX027X
12GHz.
FCSI0598M200
12QHz
GaAs FET HEMT Chips
fujitsu gaas fet
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.
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NE960R5
NE961R500
NE960R500
NE960R575
NE962R575
P14387E
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.
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NE960R2
NE961R200
NE960R200
NE960R275
P13775E
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