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    FSX027X Search Results

    FSX027X Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSX027X Fujitsu GaAs FET & HEMT Chip Original PDF
    FSX027X-E1 Fujitsu FET: P Channel: ID 0.15 A Original PDF

    FSX027X Datasheets Context Search

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    GaAs FET HEMT Chips

    Abstract: No abstract text available
    Text: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic


    Original     		PDF FSX027X FSX027X 12GHz. -65afety, FCSI0598M200 GaAs FET HEMT Chips

    Untitled

    Abstract: No abstract text available
    Text: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic


    Original     		PDF FSX027X FSX027X 12GHz.

    GaAs FET HEMT Chips

    Abstract: NF 841 FSX027X
    Text: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic


    Original     		PDF FSX027X FSX027X 12GHz. FCSI0598M200 GaAs FET HEMT Chips NF 841

    GaAs FET HEMT Chips

    Abstract: NF 841 12GHz FSX027X
    Text: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic


    Original     		PDF FSX027X FSX027X 12GHz. GaAs FET HEMT Chips NF 841 12GHz

    Untitled

    Abstract: No abstract text available
    Text: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic


    Original     		PDF FSX027X FSX027X 12GHz.

    12QHz

    Abstract: FSX027X GaAs FET HEMT Chips fujitsu gaas fet
    Text: FSX027X - GaAs FET & HEMT Chips FEATURES • Medium Power Output: P-|dB=24.5dBm Typ. @8.0GHz • High Power Gain: GidB=10dB(Typ.)@ 8.0GHz • Proven Reliability DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium


    OCR Scan     		PDF FSX027X FSX027X 12GHz. FCSI0598M200 12QHz GaAs FET HEMT Chips fujitsu gaas fet