Curtice
Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Text: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the
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AN1023
sam13-106.
Curtice
fet curtice nonlinear model
fet curtice
LAMBDA alpha 400
NE33200
FET model
NE71300
Alpha 1000 GaAsFET
pspice
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7400A
Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions
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Untitled
Abstract: No abstract text available
Text: GaAs Components Application Notes 8 Application Notes CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT . . . . . . . . . . . . . . . . .81 15 GHz GaAs-FET Buffered Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .85
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Fujitsu GaAs FET application note
Abstract: FLL1500IU-2C TC701 fujitsu GHz gaas fet RG capacitor uhf microwave fet fujitsu power amplifier GHz
Text: APPLICATION NOTE NUMBER 010 High-Power GaAs FET Device Bias Considerations The purpose of this application note is to give some general basic guidelines to bias high-power GaAs FET devices safely. However these guidelines are not a complete insurance against oscillations since
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MTT-28,
Fujitsu GaAs FET application note
FLL1500IU-2C
TC701
fujitsu GHz gaas fet
RG capacitor
uhf microwave fet
fujitsu power amplifier GHz
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NE70083
Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007
Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,
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AN-PF-1007
NE430,
NE345L,
NE372
24-Hour
NE70083
NE372800
AN83901
NE71083
Matching Transformer - line matching transformed
AN-PF-1007
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NE70083
Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,
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AN-PF-1007
NE430,
NE345L,
NE372
NE70083
planar transformer theory
small signal GaAs FET
x-band microwave fet
NE71083
DLI-1988-1
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DM74SL04
Abstract: IC DM74LS04 SW109 SW-109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419 SWD-119
Text: S2079 Application Note Drivers for GaAs FET Switches And Digital Attenuators Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs
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S2079
SW-109
SWD-119
SW-394
SW-399
OT-26
SW-205
SW-206
SW-215
SW-216
DM74SL04
IC DM74LS04
SW109
SW SPDT
fairchild m539
SW-3951
ttl and cmos digital ic
sw-419
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Fujitsu GaAs FET application note
Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was
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fcs64
magS22
angS22
Fujitsu GaAs FET application note
atc100a
FLL810
Hp 2564
FLL810IQ-3C
IMT-2000
S03A2750N1
RFP 1026 resistor
fujitsu x band amplifiers
"15 GHz" power amplifier 41dBm
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Untitled
Abstract: No abstract text available
Text: Application Note M539 Drivers for GaAs FET MMIC Switches and Digital Attenuators Rev. V4 Application Note Design Considerations M/A-COM Technology Solutions’ Microelectronics Division produces a silicon CMOS Application Specific Integrated Circuit ASIC that drives GaAs
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MADRCC0006)
MADRCC0007)
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2N3643
Abstract: opamp 747 AN80901 3.3k variable resistor AN8090 resistor 3.3k FET LNA 747 opamp eastern nec microwave
Text: California Eastern Laboratories APPLICATION NOTE AN80901 Two Stage GaAs FET LNA Bias Supply INTRODUCTION This regulator is recommended to bias a two stage, grounded source GaAs FET LNA with constant drain currents1. With minor modification, two additonal bias stages could be added to this circuit.
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AN80901
2N3643
2N3643
opamp 747
AN80901
3.3k variable resistor
AN8090
resistor 3.3k
FET LNA
747 opamp
eastern
nec microwave
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an power amplifier 108 mhz
Abstract: No abstract text available
Text: Miniline Enhanced VAx-Types Push Pull GaAs FET Amplifiers Application The VAx amplifiers with GaAs FET technology are designed to operate as the last active device in broadband RF networks. . APPLICATIONS • Last active device in an interactive broadband networks
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862MHz
40MHz
an power amplifier 108 mhz
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Untitled
Abstract: No abstract text available
Text: Miniline Enhanced VKx-Types GaAs FET High Output Amplifiers Application The VKx amplifiers with GaAs FET technology are designed to operate as the last active device in broadband RF networks. . APPLICATIONS • Last active device in an interactive broadband networks
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862MHz
40MHz
45004B)
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION OUTLINE DRAWING The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES APPLICATION
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MGF0905A
MGF0905A,
65GHz
26dBm
800mA
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES APPLICATION
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MGF0904A
MGF0904A,
65GHz
15dBm
200mA
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15180X
Abstract: 832GH DIN45004A1
Text: Miniline 1000 VKx-Types GaAs FET High Output Amplifiers Application The VKx-GH amplifiers with GaAs FET technology and very high output level are designed to operate as the last active device in broadband RF networks. . APPLICATIONS • Last active device in an interactive broadband networks
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838GH
838GH
862MHz
40MHz
45004B)
15180X
832GH
DIN45004A1
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GaAs SPDT IC FET
Abstract: SW-239TR MESFET Application
Text: Key Application Features of MMIC GaAs and Pin Diode* Switches Applications Features of PIN Diode and GaAs FET Switches In SOIC type plastic packages the GaAs FET switches can handle up M /A -COM manufactures both PIN diodes and GaAs FET sem icon able that operate to 3 GH z as analog attenuators, digital attenuators
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ATC100A
AT-210/AT-220
GaAs SPDT IC FET
SW-239TR
MESFET Application
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application notes
Abstract: No abstract text available
Text: APPLICATION NOTES APPLICATION NOTES I. PACKAGED FETs and MODULES A. Handling Precautions B. Circuit Installation C. Package Markings II. FET CHIPS A. Removal of GaAs FET and HEMT Chips From Shipping Containers B. Circuit Installation C. Equivalent Circuit
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CMY210
Abstract: CF750 upconverter cmy 210 L band upconverter
Text: GaAs Components Infineon ♦e c f i n c l o g i a ï Application Notes 8 Application Notes CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT.81 15 GHz GaAs-FET Buffered
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9085 d
Abstract: ic fet 547 fet 547 MA644 9415
Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION small size handheld radio. FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm APPLICATION PDC 0.8G Hz ABSOLUTE MAXIMUM RATINGS Tc Ratings
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FA01219A
ACP50
ACP100
Po--30
9085 d
ic fet 547
fet 547
MA644
9415
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High voltage GaAs FET
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC DESCRIPTION FA01220A is RF Hybrid IC designed for 1.5GHz band small size handheld radio. FEATURES • Low voltage 3.5V • High gain 20.5B • High efficiency 50% • High power 30.5dBm APPLICATION
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FA01220A
FA01220A
Po--30
1453M
High voltage GaAs FET
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MACOM MMIC RF AMP
Abstract: SW-338 SWD-109 SWD-119 DC bias of gaas FET
Text: Mfecm Application Note M an A M P com pany Drivers for GaAs FET MMIC Switches and Digital Attenuators M539 V 2.00 Application Note Design Considerations M/A-COM's Microelectronics Division produces a silicon CMOS Application Specific Integrated Circuit ASIC that
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SW-109)
SWD-119)
MACOM MMIC RF AMP
SW-338
SWD-109
SWD-119
DC bias of gaas FET
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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nec 1441
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT iuPG172GV PDC1.5GHZ-VARIABLE GAIN PA DRIVER AMPLIFIER DESCRIPTION ¿iPG172GV is a GaAs FET PA driver amplifier with variable gain function which was developed for PDC Personal Digital Cellular application.
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iuPG172GV
iPG172GV
IR35-00-3
WS60-00-1
nec 1441
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG152TA L-BAND SPDT SWITCH DESCRIPTION The ¿iPG152TA is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application.
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uPG152TA
iPG152TA
WS60-00-1
C10535E)
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