Untitled
Abstract: No abstract text available
Text: 2013-08-01 GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.1 IRL 80 A Features: Besondere Merkmale: • GaAs infrared emitting diode • Clear plastic package with lateral emmision • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche
|
Original
|
D-93055
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSIP760. Vishay Telefunken GaAs/GaAlAs IR Emitting Diodes in ø 5 mm Package Description The TSIP76.–series are infrared emitting diodes in GaAlAs on GaAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs
|
Original
|
TSIP760.
TSIP76.
D-74025
20-May-99
|
PDF
|
OHRD1938
Abstract: BPX osram GEOY6021 Q62703-Q395 Q62703-Q67 LD261-1
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81 Miniatur-Gehäuse GaAs infrared emitting diode
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 405 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit SFH 305 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability
|
Original
|
GEOY6137
|
PDF
|
BPX osram
Abstract: GEOY6021 OHRD1938 Q62703-Q395 Q62703-Q67
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81 Miniatur-Gehäuse GaAs infrared emitting diode
|
Original
|
|
PDF
|
Q65110A3337
Abstract: BPX osram GEOY6021 OHRD1938 Q62703-Q395
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81 Miniatur-Gehäuse GaAs infrared emitting diode
|
Original
|
|
PDF
|
3LD261
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 81 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability
|
Original
|
Q62703-Q395
Q62703-Q67
GEOY6021
3LD261
|
PDF
|
GEOY6137
Abstract: OHRD1938 Q62702-P835 OHR01042
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 405 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit SFH 305 Miniatur-Gehäuse GaAs infrared emitting diode
|
Original
|
|
PDF
|
GEO06021
Abstract: OHRD1938 Q62703-Q395 Q62703-Q67
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 81 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability
|
Original
|
OHR01878
GEO06021
GEO06021
OHRD1938
Q62703-Q395
Q62703-Q67
|
PDF
|
GEO06137
Abstract: OHRD1938 Q62702-P835
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 405 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit SFH 305 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability
|
Original
|
OHR01886
GEO06137
GEO06137
OHRD1938
Q62702-P835
|
PDF
|
TSAL7600
Abstract: No abstract text available
Text: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs
|
Original
|
TSAL7600
TSAL7600
D-74025
20-May-99
|
PDF
|
IEC 62471 osram
Abstract: IEC-61760-1 LPT 80a
Text: 2013-01-31 GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0 IRL 80 A Features: Besondere Merkmale: • GaAs infrared emitting diode • Clear plastic package with lateral emmision • • • • • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche
|
Original
|
D-93055
IEC 62471 osram
IEC-61760-1
LPT 80a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs
|
Original
|
TSAL7600
TSAL7600
D-74025
20-May-99
|
PDF
|
TSIP7600
Abstract: TSIP7601 TSIP Temic
Text: TELEFUNKEN Semiconductors TSIP 760. GaAs/GaAlAs IR Emitting Diodes in ø 5 mm Package Description The TSIP 76.–series are infrared emitting diodes in GaAlAs on GaAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs
|
Original
|
D-74025
TSIP7600
TSIP7601
TSIP Temic
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 262 … LD 264 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 80-Serie • Miniatur-Gehäuse Features • GaAs infrared emitting diode
|
Original
|
80-Serie
GEOY6367
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSAL7600 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs
|
Original
|
TSAL7600
TSAL7600
D-74025
20-May-99
|
PDF
|
TSAL7600
Abstract: No abstract text available
Text: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs
|
Original
|
TSAL7600
TSAL7600
D-74025
20-May-99
|
PDF
|
TSAL7300
Abstract: No abstract text available
Text: TSAL7300 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages. In comparison with the standard GaAs on GaAs
|
Original
|
TSAL7300
TSAL7300
D-74025
20-May-99
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSMF2000 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø SMD Package Description TSMF2000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 %
|
Original
|
TSMF2000
TSMF2000
D-74025
09-Sept-99
|
PDF
|
TSAL5100 Vishay
Abstract: TSAL5100
Text: TSAL5100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs
|
Original
|
TSAL5100
TSAL5100
D-74025
20-May-99
TSAL5100 Vishay
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSMF1000 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø SMD Package Description TSMF1000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 %
|
Original
|
TSMF1000
TSMF1000
D-74025
17-Feb-00
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSAL5100 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs
|
Original
|
TSAL5100
TSAL5100
D-74025
20-May-99
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSML1000 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø SMD Package Description TSML1000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 %
|
Original
|
TSML1000
TSML1000
D-74025
17-Jan-00
|
PDF
|
TSIP520
Abstract: TSIP5200 TSIP520I
Text: TSIP520. Temic Semiconductors GaAs/GaAlAs IR Emitting Diodes in 0 5mm Package Description TSIP52.-series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol
|
OCR Scan
|
TSIP520.
TSIP52.
16-Oct-%
16-Oct-96
TSIP520
TSIP520
TSIP5200
TSIP520I
|
PDF
|