60Ghz
Abstract: CHA2157
Text: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
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CHA2157
55-60GHz
CHA2157
DSCHA21577150
60Ghz
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Untitled
Abstract: No abstract text available
Text: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
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CHA2157
55-60GHz
CHA2157
DSCHA21577150
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Untitled
Abstract: No abstract text available
Text: RMPA39000 37-40 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features The Fairchild Semiconductor RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3stage GaAs MMIC amplifier chip utilizing Fairchild Semiconductor's advanced 0.15 µm gate length Power PHEMT
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RMPA39000
RMPA39000
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15 GHz power amplifier Output Power 37dBm
Abstract: AN0017 CHA5052-QGG
Text: CHA5052-QGG RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5052-QGG is a three-stage monolithic high power amplifier. The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes
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CHA5052-QGG
7-16GHz
CHA5052-QGG
7-16GHz
37dBm
29dBm
700mA
28LQFN5x5
DSCHA5052QGG7033
15 GHz power amplifier Output Power 37dBm
AN0017
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Traveling Wave Amplifier
Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
Text: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT
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85GHz
575mA/mm,
753mW/mm
18GHz.
12dBm
AV02-1684EN
Traveling Wave Amplifier
95GH
Dielectric Constant Silicon Nitride
MMIC POWER AMPLIFIER hemt
APMC2001
FMM5820X
HMC-AUH312
TGA4803
TGA4906
InGaAs hemt biasing
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A5052A
Abstract: AN0017 CHA5052
Text: CHA5052aQGG RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5052aQGG is a monolithic high power amplifier. UMS A5052A YYWW three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes
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CHA5052aQGG
7-16GHz
CHA5052aQGG
A5052A
7-16GHz
37dBm
29dBm
700mA
28LQFN5x5
DSCHA5052aQGG8294
A5052A
AN0017
CHA5052
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AN0017
Abstract: CHA5056-QGG
Text: CHA5056-QGG RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5056-QGG is a monolithic high power amplifier. three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes
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CHA5056-QGG
17-27GHz
CHA5056-QGG
17-27GHz
38dBm
890mA
28LQFN5x5
DSCHA5056QGG7033
AN0017
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ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
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PCB Rogers RO4003 substrate
Abstract: AN0017 MO-220 RO4003 QFN 5x5 Rogers RO4003
Text: PA-P013663-QGG RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The PA-P013663-QGG is a monolithic high power amplifier. three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes
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PA-P013663-QGG
17-27GHz
PA-P013663-QGG
17-27GHz
38dBm
890mA
28LQFN5x5
DSPA-PO13663QGG6303
PCB Rogers RO4003 substrate
AN0017
MO-220
RO4003
QFN 5x5
Rogers RO4003
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PCB Rogers RO4003
Abstract: AN0017 RO4003 PCB Rogers RO4003 substrate
Text: PA-P013664-QGG RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC Description The PA-P013664-QGG is a three-stage monolithic high power amplifier. The circuit is manufactured with a power P-HEMT process, 0.15µm gate length, via holes through
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PA-P013664-QGG
7-16GHz
PA-P013664-QGG
7-16GHz
38dBm
29dBm
700mA
28LQFN5x5
DSPA-PO13664QGG6303
PCB Rogers RO4003
AN0017
RO4003
PCB Rogers RO4003 substrate
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3000 watt power amplifier circuit diagram
Abstract: 15 watt power supply circuit diagram power amplifier mmic
Text: RMPA29000 27-30 GHz 1 Watt Power Amplifier MMIC Description Features The Fairchild Semiconductor RMPA29000 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA29000 is a 3stage GaAs MMIC amplifier utilizing Fairchild Semiconductor's advanced 0.15µm gate length Power PHEMT
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RMPA29000
RMPA29000
3000 watt power amplifier circuit diagram
15 watt power supply circuit diagram
power amplifier mmic
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amplifier circuit diagram 1000 watt
Abstract: 1000 watt AMPLIFIER CIRCUIT DIAGRAM
Text: iTR39100 37-40 GHz 1 Watt Power Amplifier MMIC Description Features The iTR39100 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The iTR39100 is a 3stage GaAs MMIC amplifier utilizing an advanced 0.15 m gate length Power PHEMT process and
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iTR39100
iTR39100
1000mA
amplifier circuit diagram 1000 watt
1000 watt AMPLIFIER CIRCUIT DIAGRAM
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15 watt power supply circuit diagram
Abstract: No abstract text available
Text: iTR39200 37-40 GHz 1.6 Watt Power Amplifier MMIC Description Features The iTR39200 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The iTR39200 is a 3stage GaAs MMIC amplifier utilizing an advanced 0.15 m gate length Power PHEMT process and
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iTR39200
iTR39200
37GHz
38GHz
39GHz
40GHz
1600mA
15 watt power supply circuit diagram
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RMPA39000
Abstract: circuit diagram of 230 watt power supply 15 watt power supply circuit diagram
Text: iTR39000 37-40 GHz 0.8 Watt Power Amplifier MMIC Description Features The iTR39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The iTR39000 is a 3stage GaAs MMIC amplifier utilizing an advanced 0.15 m gate length Power PHEMT process and
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iTR39000
iTR39000
RMPA39000
700mA,
circuit diagram of 230 watt power supply
15 watt power supply circuit diagram
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15 watt power supply circuit diagram
Abstract: No abstract text available
Text: RMPA39200 37-40 GHz 1.6 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Fairchild Semiconductor RMPA39200 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA39200 is a 3stage GaAs MMIC amplifier utilizing Fairchild Semiconductor's advanced 0.15µm gate length Power PHEMT
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RMPA39200
RMPA39200
15 watt power supply circuit diagram
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HMC617
Abstract: 616LP3E HMC616LP3 HMC616LP3E HMC617LP3 HMC618LP3
Text: HMC616LP3 / 616LP3E v00.0508 LOW NOISE AMPLIFIERS - SMT 5 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Typical Applications Features The HMC616LP3 E is ideal for: Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 24 dB • BTS & Infrastructure
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HMC616LP3
616LP3E
HMC617
616LP3E
HMC616LP3E
HMC617LP3
HMC618LP3
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HMC617
Abstract: 616LP3E HMC616LP3 HMC616LP3E HMC617LP3 HMC618LP3 GaAs 0.15 pHEMT HMC616
Text: HMC616LP3 / 616LP3E v01.1008 LOW NOISE AMPLIFIERS - SMT 5 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Typical Applications Features The HMC616LP3 E is ideal for: Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 24 dB • BTS & Infrastructure
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HMC616LP3
616LP3E
HMC617
616LP3E
HMC616LP3E
HMC617LP3
HMC618LP3
GaAs 0.15 pHEMT
HMC616
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Untitled
Abstract: No abstract text available
Text: HMC616LP3 / 616LP3E v02.0610 Amplifiers - low Noise - smT 7 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Typical Applications Features The HmC616lp3 e is ideal for: low Noise figure: 0.5 dB • Cellular/3G and lTe/wimAX/4G High Gain: 24 dB • BTs & infrastructure
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HMC616LP3
616LP3E
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0.47 uf CAPACITOR
Abstract: HMC616LP3
Text: HMC616LP3 / 616LP3E v02.0610 Amplifiers - Low Noise - SMT 7 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Typical Applications Features The HMC616LP3 E is ideal for: Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 24 dB • BTS & Infrastructure
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HMC616LP3
616LP3E
0.47 uf CAPACITOR
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AS160-86
Abstract: MSOP-10
Text: Preliminary PHEMT GaAs IC Transmit/Dual Receive Switch With Diversity Antennas 0.5–2 GHz AS160-86 Features MSOP-10 • Five RF Ports PIN 10 ■ Transmit to Either of Two Antennas ■ Receive From Either of Two Antennas ■ Differential Biasing for High Linearity
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AS160-86
MSOP-10
AS160-86
3/99A
MSOP-10
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AS160-86
Abstract: MSOP-10
Text: Preliminary PHEMT GaAs IC Transmit/Dual Receive Switch With Diversity Antennas 0.5–2 GHz AS160-86 Features MSOP-10 • Five RF Ports PIN 10 ■ Transmit to Either of Two Antennas PIN 1 INDICATOR ■ Receive From Either of Two Antennas ■ Differential Biasing for High Linearity
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AS160-86
MSOP-10
AS160-86
3/99A
MSOP-10
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Untitled
Abstract: No abstract text available
Text: MICROWAVE CORPORATION HMC463 v00.0403 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC463 is ideal for: Gain: 14 dB • Telecom Infrastructure Noise Figure: 2.5 dB @ 10 GHz • Microwave Radio & VSAT
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HMC463
HMC463
025mm
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Untitled
Abstract: No abstract text available
Text: PHEMT GaAs 1C Transmit/Dual Receive Switch With Diversity Antennas 0.5-2 GHz ESAlpha AS160-86 F eat ur e s • Five RF Ports M S O P - 10 pini° —nnnnn' ■ Transmit to Either of Two Antennas 0.193 0.118 3.00 mm ± 0.006 (0.15 mm) ■ Receive From Either of Two Antennas
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AS160-86
AS160-86
3/99A
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GaAs 0.15 um pHEMT
Abstract: Ultra low noise amplifier GaAs 0.15 pHEMT
Text: Ultra Low Noise An Ci IX Y Scompari Ultra Low Noise pHEMTS • Low Noise Figure MwT-LNZOO MwT-LN600 • High A ssociated Gain 3 0 0 //. 6 6 0 0 / 1.5 • O peration u p to 30 GHz • 0.15 um GaAs p H e m t Process • Com m ercial Applications • M ilitary A pplications
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MwT-LN300
300/J.
MwT-LN600
MLA-0522A
MLA-01122B
MLA-061S3A
GaAs 0.15 um pHEMT
Ultra low noise amplifier
GaAs 0.15 pHEMT
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