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    CHA2157 Price and Stock

    United Monolithic Semiconductors CHA2157-99F

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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD CHA2157-99F 100
    • 1 -
    • 10 -
    • 100 $31.74
    • 1000 $31.74
    • 10000 $31.74
    		Buy Now

    CHA2157 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CHA2157 United Monolithic Semiconductors 55-60GHz Low Noise / Medium Power Amplifier Original PDF
    CHA2157 United Monolithic Semiconductors 55-60GHz Low Noise / Medium Power Amplifier Original PDF
    CHA2157 United Monolithic Semiconductors 55-60GHz Low Noise / Medium Power Amplifier Original PDF
    CHA2157-99F/00 United Monolithic Semiconductors 55 -60GHz low noise / medium power amplifier Original PDF
    CHA2157-99F/00 United Monolithic Semiconductors 55-60GHz Low Noise / Medium Power Amplifier Original PDF

    CHA2157 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    60Ghz transistor

    Abstract: 60Ghz CHA2157
    Text: CHA2157 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.


    Original     		PDF CHA2157 55-60GHz CHA2157 10ies DSCHA21579090 60Ghz transistor 60Ghz

    60Ghz

    Abstract: CHA2157
    Text: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.


    Original     		PDF CHA2157 55-60GHz CHA2157 DSCHA21577150 60Ghz

    60Ghz

    Abstract: CHA2157
    Text: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.


    Original     		PDF CHA2157 55-60GHz CHA2157 DSCHA21577150 60Ghz

    Untitled

    Abstract: No abstract text available
    Text: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.


    Original     		PDF CHA2157 55-60GHz CHA2157 DSCHA21577150

    CHA2066-99S

    Abstract: No abstract text available
    Text: UMS UNIQUE SPACE SOLUTION A complete selection of catalogue Class S products For many years, UMS has served the needs of the international space community by offering an extensive selection of space evaluated processes: • Low Noise PHEMT PH25, PH15 • Power MESFET (HP07)


    Original     		PDF PPH25X, PPH15, HB20S, HB20P) HB20M) MIL-PRF-38534. CND2047 CHS5100 CHP6013 CHX2089 CHA2066-99S

    PPH25X

    Abstract: No abstract text available
    Text: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: u n ite d m o n o lith ic sem ico n d u cto rs CHA2157 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to


    OCR Scan     		PDF CHA2157 55-60GHz CHA2157 DSCHA21579027