60Ghz
Abstract: CHA2157
Text: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
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Original
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PDF
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CHA2157
55-60GHz
CHA2157
DSCHA21577150
60Ghz
|
60Ghz
Abstract: CHA2157
Text: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
|
Original
|
PDF
|
CHA2157
55-60GHz
CHA2157
DSCHA21577150
60Ghz
|
Untitled
Abstract: No abstract text available
Text: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
|
Original
|
PDF
|
CHA2157
55-60GHz
CHA2157
DSCHA21577150
|