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    GeneSic Semiconductor Inc GA50JT17-247

    TRANS SJT 1700V 100A TO247
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    GA50JT17 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GA50JT17-247 GeneSiC Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS SJT 1.7KV 100A Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: GA50JT17-CAL Section VII: SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA50JT17-CAL.


    Original
    PDF GA50JT17-CAL sic/sjt/GA50JT17-CAL GA50JT17-CAL. 25-AUG-2014 GA50JT17 00E-47 26E-28 398E-9 026E-09 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA50JT17-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1700 V 25 mΩ 100 A 95 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch Exceptional Safe Operating Area


    Original
    PDF GA50JT17-CAL GA50JT17 00E-47 26E-28 398E-9 026E-09 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA50JT17-247 Section VII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA50JT17-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.2 $ * $Date: 29-JAN-2015 $ * * GeneSiC Semiconductor Inc.


    Original
    PDF GA50JT17-247 GA50JT17-247. 29-JAN-2015 GA50JT17 833E-48 073E-26 398E-9 026E-09 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA50JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    PDF GA50JT17-247 O-247 GA50JT17 833E-48 073E-26 398E-9 026E-09 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards


    Original
    PDF GA03IDDJT30-FR4 GA03IDDJT30-FR4 FOD3182