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Vishay Semiconductors VS-GA200SA60UP IGBT MOD 600V 200A 500W SOT227
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VS-GA200SA60UP	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	VS-GA200SA60UP		1			1 $25.1258 10 $25.1258 100 $25.1258 1000 $25.1258 10000 $25.1258	Buy Now
Vishay Intertechnologies VS-GA200SA60UP Single Igbt, 600V, 200A; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.92V; Power Dissipation:500W; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes \|Vishay VS-GA200SA60UP
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Newark	VS-GA200SA60UP	Bulk			160	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies GA200SA60UP 100 A INSULATED GATE BIPOLAR TRANSISTOR (ULTRAFAST SPEED IGBT) Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
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ComSIT USA	GA200SA60UP		60			1 - 10 - 100 - 1000 - 10000 -	Get Quote

GA200SA60UP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GA200SA60UPBF		International Rectifier	TRANS IGBT MODULE N-CH 600V 200A 4SOT-227		Original	PDF

GA200SA60UP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ga200sa60up Abstract: N-CHANNEL INSULATED GATE TYPE Text: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200SA60UP 2002/95/EC OT-227 18-Jul-08 ga200sa60up N-CHANNEL INSULATED GATE TYPE	PDF
e789 Abstract: ic 3020 Text: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200SA60UP E78996 2002/95/EC OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 e789 ic 3020	PDF
GA200SA60UP Abstract: No abstract text available Text: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200SA60UP OT-227 18-Jul-08 GA200SA60UP	PDF
Untitled Abstract: No abstract text available Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200SA60UP E78996 2002/95/EC OT-227 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200SA60UP E78996 2002/95/EC OT-227 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200SA60UP E78996 2002/95/EC OT-227 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	VS-GA200SA60UP E78996 OT-227 OT-227electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200SA60UP OT-227 2002/95/EC 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200SA60UP E78996 2002/95/EC OT-227 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	VS-GA200SA60UP E78996 OT-227 30electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200SA60UP OT-227 12-Mar-07	PDF
Untitled Abstract: No abstract text available Text: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	I27236 GA200SA60UP 20kHz OT-227	PDF
ga200sa60up Abstract: No abstract text available Text: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	I27236 GA200SA60UP 20kHz 12-Mar-07 ga200sa60up	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF