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    GA200SA60 Search Results

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    GA200SA60 Price and Stock

    Vishay Semiconductors GA200SA60U

    IGBT MOD 600V 200A 500W SOT227B
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    Vishay Semiconductors GA200SA60S

    IGBT MOD 600V 200A 630W SOT227B
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    Vishay Semiconductors VS-GA200SA60UP

    IGBT MOD 600V 200A 500W SOT227
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    Quest Components VS-GA200SA60UP 1
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    Vishay Semiconductors VS-GA200SA60SP

    IGBT MODULE 600V 781W SOT227
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    Vishay Intertechnologies VS-GA200SA60UP

    Single Igbt, 600V, 200A; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.92V; Power Dissipation:500W; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Vishay VS-GA200SA60UP
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    Newark VS-GA200SA60UP Bulk 160
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    Find more GA200SA60 price and stock on Findchips.com

    GA200SA60 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GA200SA60S International Rectifier IGBTs - Modules, Discrete Semiconductor Products, IGBT STD 600V 100A SOT227 Original PDF
    GA200SA60S International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    GA200SA60SP International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    GA200SA60SPBF International Rectifier TRANS IGBT MODULE N-CH 600V 200A 4SOT-227 Original PDF
    GA200SA60U International Rectifier IGBTs - Modules, Discrete Semiconductor Products, IGBT UFAST 600V 100A SOT227 Original PDF
    GA200SA60U International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    GA200SA60UPBF International Rectifier TRANS IGBT MODULE N-CH 600V 200A 4SOT-227 Original PDF

    GA200SA60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GA200SA60SP

    Abstract: No abstract text available
    Text: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC


    Original     		PDF I27235 GA200SA60SP OT-227 OT-227 GA200SA60SP

    Untitled

    Abstract: No abstract text available
    Text: PD -50066A GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF -50066A GA200SA60U 20kHz 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available


    Original     		PDF VS-GA250SA60S VS-GA200SA60SP OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    ga200sa60up

    Abstract: N-CHANNEL INSULATED GATE TYPE
    Text: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP 2002/95/EC OT-227 18-Jul-08 ga200sa60up N-CHANNEL INSULATED GATE TYPE

    GA200SA60SP

    Abstract: No abstract text available
    Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		PDF GA200SA60SP OT-227 2002/95/EC 18-Jul-08 GA200SA60SP

    e789

    Abstract: ic 3020
    Text: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 e789 ic 3020

    GA200SA60UP

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP OT-227 18-Jul-08 GA200SA60UP

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 11-Mar-11

    GA200SA60SP

    Abstract: No abstract text available
    Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		PDF GA200SA60SP OT-227 2002/95/EC 18-Jul-08 GA200SA60SP

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF VS-GA200SA60UP E78996 OT-227 OT-227electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP OT-227 2002/95/EC 18-Jul-08

    CGC SWITCH

    Abstract: transistor 342 pf GA200SA60SP
    Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		PDF GA200SA60SP OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 CGC SWITCH transistor 342 pf GA200SA60SP

    smps tig welding

    Abstract: transistor 342 G GA200SA60SP
    Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		PDF GA200SA60SP OT-227 2002/95/EC 18-Jul-08 smps tig welding transistor 342 G GA200SA60SP

    Untitled

    Abstract: No abstract text available
    Text: VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF VS-GA200SA60UP E78996 OT-227 30electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    i.g.bt

    Abstract: IGBT GS ga200sa60 SOT227Package
    Text: GA200SA60S SOT-227 Package Details Dimensions are shown in millimeters inches 3 8 .3 0 ( 1.5 08 ) 3 7 .8 0 ( 1.4 88 ) 4 .4 0 (.17 3 ) 4 .2 0 (.16 5 ) C HAM FER 2 .0 0 ( .0 7 9 ) X 45 7 L E A D A S S IG M E N T S E -A 4 E S C 4 1 3 G E IG B T 2 5 .7 0 ( 1.0 12 )


    Original     		PDF GA200SA60S OT-227 i.g.bt IGBT GS ga200sa60 SOT227Package

    SOT-227 heatsink

    Abstract: GA200SA60S
    Text: PD- 5.070 PRELIMINARY GA200SA60S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC


    Original     		PDF GA200SA60S OT-227 SOT-227 heatsink GA200SA60S

    GA200SA60U

    Abstract: k241
    Text: PD -50066A GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF -50066A GA200SA60U 20kHz 12-Mar-07 GA200SA60U k241

    GA200SA60U

    Abstract: No abstract text available
    Text: PD -50066A GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF -50066A GA200SA60U 20kHz r252-7105 GA200SA60U

    Untitled

    Abstract: No abstract text available
    Text: International lö R R ectifi 0r PD -5.066 P R E LIM IN A R Y GA200SA60U Ultra-Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR F eatu res • U ltraFast: O p tim ize d for m inim um saturation voltage V ces = 600V a nd operating freq u en cies up to 4 0 k H z in hard


    OCR Scan     		PDF GA200SA60U

    Untitled

    Abstract: No abstract text available
    Text: PD- 5.070 International IOR Rectifier GA200SA60S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features c • Standard: Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC


    OCR Scan     		PDF GA200SA60S 200SA

    Untitled

    Abstract: No abstract text available
    Text: I , PD- 5.070 In te rn a tio n a l lO R Rectifier PRELIMINARY GA200SA60S Standard Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • S ta n d a rd : O ptim ize d for m inim um saturation vo lta g e and low operating fre q u e n cie s up to 1kH z • Lowest conduction losses available


    OCR Scan     		PDF GA200SA60S

    TRANSISTOR ASY 0.25 W

    Abstract: c103 a ge
    Text: PD - 5.066 International I R Rectifier GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-Fast Speed IGBT Features • U ltra F a st: O p tim ize d fo r m in im um satu ra tion vo lta g e a n d op e ra tin g fre q u e n cie s up to 4 0 kH z in hard sw itch ing , > 2 0 0 kH z in re so n a n t m ode


    OCR Scan     		PDF GA200SA60U C-102 C-103 TRANSISTOR ASY 0.25 W c103 a ge