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    GA MOSFET Search Results

    GA MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    GA MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		PDF 2N7635-GA 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA

    Untitled

    Abstract: No abstract text available
    Text: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		PDF 2N7636-GA 2N7636 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7636-GA

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		PDF 2N7639-GA 2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9 20E-03

    Untitled

    Abstract: No abstract text available
    Text: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		PDF 2N7638-GA 2N7638 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7638-GA

    2n2222 spice model

    Abstract: No abstract text available
    Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		PDF 2N7637-GA 2N7637 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7637-GA 2n2222 spice model

    Untitled

    Abstract: No abstract text available
    Text: 2N7640-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch


    Original     		PDF 2N7640-GA 2N7640 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 2N7640-GA

    Untitled

    Abstract: No abstract text available
    Text: BSS138W 50V N-Channel Enhancement Mode MOSFET - ESD Protected • Maximum Ratings and Thermal Characteristics TA=25OC unless otherwise noted PA RA M E TE R S ym b o l L i mi t Uni ts D r a i n- S o ur c e Vo lta g e V DS 50 V Ga te - S o ur c e Vo lta g e


    Original     		PDF BSS138W 2010-REV

    Untitled

    Abstract: No abstract text available
    Text: SN NN01Z Z10Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 0.24Ω at VGS = 10V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 2000V


    Original     		PDF NN01Z SNN01Z10 SNN01Z OT-223 SNN01 1Z10Q 24-NOV-11 KSD-T5A011-000

    SNN01Z10

    Abstract: No abstract text available
    Text: SN NN01Z Z10Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 0.24Ω at VGS = 10V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 2000V


    Original     		PDF NN01Z OT-223 SNN01Z SNN01Z10 SNN01 1Z10Q 24-NOV-11 KSD-T5A011-000

    ZXTN26020DMF

    Abstract: DFN1411-3 ZXTN26020DMFTA MARKING Z1
    Text: A Product Line of Diodes Incorporated ZXTN26020DMF H IGH GA IN , L OW V C E S A T N P N B I PO LAR TR ANSI S TOR Features Mechanical Data • • • • • • • • • • • High Gain Low Vcesat NPN transistor Very Low Rcesat High ICM capability


    Original     		PDF ZXTN26020DMF AEC-Q101 00V-MM, DFN1411-3 J-STD-020 MIL-STD-202, DS31953 ZXTN26020DMF DFN1411-3 ZXTN26020DMFTA MARKING Z1

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN26020DMF H IGH GA IN , L OW V C E S A T N P N B I PO LAR TR ANSI S TOR Features Mechanical Data • • • • • • • • • • • High Gain Low Vcesat NPN transistor Very Low Rcesat High ICM capability


    Original     		PDF ZXTN26020DMF AEC-Q101 00V-MM, DFN1411-3 J-STD-020 DS31953

    Untitled

    Abstract: No abstract text available
    Text: SN NN01Z Z60Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 135mΩ at a VGS = 10V V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 1000V


    Original     		PDF NN01Z OT-223 SNN01Z SNN01Z6 01Z60 24-SEP-12 KSD-T5A014-000

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT Æ utTon CÁTALO' N-CHANNEL ENHANCEMENT MOS FET 50 0V, 24A, 0.25Q SDF24N50 GAF FEATURES • • • • • • • • SCHEMATIC GH D ra in -s ou rc e Vo 1t . 1 D r ai n- Ga te Voltage G GATE DRAIN 3 SO U R C E STANDARD BEND CONFIGURATIONS (1) Ga te - So ur ce Voltage


    OCR Scan     		PDF SDF24N50 MIL-S-19500 di/dt-100A/

    SDF440

    Abstract: No abstract text available
    Text: Æ iitro n PRODUCT DEVICES.INC. ATÂl©' N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt. l Dra in-Ga te Vo 11age (RGS=1.0Mn) (1) Gate-Source Voltage Continuous Drain Current Continuous (Tc = 25°C) Drain Current Pulsed(3)


    OCR Scan     		PDF SDF440 MIL-S-19500 3001iS>

    Untitled

    Abstract: No abstract text available
    Text: Æ litro n PRODUCT DEVICES.INC. 330] ELECTRONICS WAY. WEST PALM BEACH. FLORIDA 33-107 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET 500V, 2.5A, 3. On ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Vo 1t .(1) Dra in-Ga te Vo 1tage


    OCR Scan     		PDF 5DF420 SDF420 SDF420

    Untitled

    Abstract: No abstract text available
    Text: Æwtran PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 200V, SYMBOL UNITS Drain-source Vo 1t .(1) Dra in -Ga te Vo 1tage (Rgs = 1•O M n ) Cl)


    OCR Scan     		PDF D0Q3T31

    mosfet fs series

    Abstract: No abstract text available
    Text: ILOW VOLTAGE POWER MOSFET FS SERIES 10V DRIVE Electrical characteristics (TYP.) Max, «fin ga Package Typo No. Voss (V) •k FS10U M -0 3 ★ FS1O V5-03 •k m m Vgss (V) fusioni W D TYP. MAX. V«S(M C iss M P-3 20 10 FS10KM -O 3 ±20 72 95 280 15 FS 3 0 A S-0 3


    OCR Scan     		PDF -220S O-220FN FS10U V5-03 FS10KM FS30U FS70U VS-03 S100K mosfet fs series

    ta9770

    Abstract: transistor buz71a BUZ71A TB334 cip soa rl
    Text: BUZ71A Semiconductor June 1999 Data Sheet 13A, 50 V, 0.120 Ohm, N-Channel Power MOSFET File Number 2419.2 Features • 13A, 50V T his is an N -C hannel e n h a n ce m e n t m ode silicon ga te pow er field effect tra n sisto r de sig n e d for ap plicatio ns such as


    OCR Scan     		PDF TA9770. BUZ71A O-220AB BUZ71A ta9770 transistor buz71a TB334 cip soa rl

    DS25-.A

    Abstract: GA mosfet
    Text: Ætotxan PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 040-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MÜS FET 200V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt.(l) VDSS Dra in-Ga te Vo 1tage VDGR (R gs = 1 -O M n ) (1)


    OCR Scan     		PDF 5DF220 SDF220 SDF220 JO/93 DS25-.A GA mosfet

    SD10425

    Abstract: diode GF
    Text: Æ w t x a n PRODUCT CATÂLO' DEVI C E S . I N C . N-CHANNEL ENHANCEMENT MOS FET 1000V, 2.0A, 6. On ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Drain-source Volt. l Dra in-Ga te Vo Itage (RGs=1.0Mn) (1) Gate-Source Voltage Cont inuous Drain Current Continuous


    OCR Scan     		PDF SD10425 MIL-S-19500 300nS, SD10425 diode GF

    D8P05

    Abstract: rfp8p05 625Q TA09832
    Text: inteikSI RFD8P05, RFD8P05SM, RFP8P05 D ata S heet J u ly 1999 BA, 50V, 0.300 Ohm, P-Channel Power MOSFETs File N u m b e r 23 84.2 Features • 8A, 5 0V T h e se products are P -C hannel pow e r M O S F E Ts m anufactured using th e M e ga F E T process. This process,


    OCR Scan     		PDF RFD8P05, RFD8P05SM, RFP8P05 TA09832. AN7254 AN7260. D8P05 rfp8p05 625Q TA09832

    Untitled

    Abstract: No abstract text available
    Text: ^ ¡ » l i t r o n d e v i c e s . , NC. _ PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET 2 0 0 V , 5 0 A, 0.05 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Dr ain-source Vo It . 1 Dra in-Ga te Vo 1 tage (RGS-l.OMn) UNITS SYMBOL (1) Gate-Source Voltage


    OCR Scan     		PDF SDF50NA20

    Untitled

    Abstract: No abstract text available
    Text: Æ w t x a n PRODUCT CATÂLO' DEVI C E S . I N C . N -CH AN N EL ENHANCEMENT MOS F E T 1000V, 2.0A, 6. On ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Drain-source Volt. l Dra in-Ga te Vo Itage (RGs=1.0Mn) (1) Gate-Source Voltage Cont inuous Drain Current Continuous


    OCR Scan     		PDF SD10425

    mj122

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T P 9N 25E TM O S E -FE T ™ P o w er Field E ffe c t Tran sisto r M otorola Preferred Device N-Channel Enhancement-Mode Silicon Ga te This advanced TM OS E -F E T is designed to w ithstand high


    OCR Scan     		PDF MTP9N25E mj122