Untitled
Abstract: No abstract text available
Text: SN NN01Z Z10Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 0.24Ω at VGS = 10V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 2000V
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Original
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PDF
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NN01Z
SNN01Z10
SNN01Z
OT-223
SNN01
1Z10Q
24-NOV-11
KSD-T5A011-000
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Untitled
Abstract: No abstract text available
Text: SN NN01Z Z60Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 135mΩ at a VGS = 10V V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 1000V
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Original
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PDF
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NN01Z
SNN01Z6
SNN01Z
OT-223
01Z60
24-SEP-12
KSD-T5A014-000
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Untitled
Abstract: No abstract text available
Text: SN NN01Z Z60Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 135mΩ at a VGS = 10V V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 1000V
|
Original
|
PDF
|
NN01Z
OT-223
SNN01Z
SNN01Z6
01Z60
24-SEP-12
KSD-T5A014-000
|
SNN01Z10
Abstract: No abstract text available
Text: SN NN01Z Z10Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 0.24Ω at VGS = 10V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 2000V
|
Original
|
PDF
|
NN01Z
OT-223
SNN01Z
SNN01Z10
SNN01
1Z10Q
24-NOV-11
KSD-T5A011-000
|