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    SDF220 Search Results

    SDF220 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SDF220 Solitron Devices VDS (V) = 200, Id Continuous Tc=25C (A) = 5, Idm Pulsed (A) = 20, RDS (On) (Ohms)... Scan PDF
    SDF220JAAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF220JAAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF220JAAU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF220JABD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF220JABS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF220JABU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF220JDAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF220JDAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF220JDAU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: SDF220JABXHSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)5.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)-55


    Original     		PDF SDF220JABXHSN

    Untitled

    Abstract: No abstract text available
    Text: SDF220JAAXHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)5.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)-55


    Original     		PDF SDF220JAAXHD1N

    DS25-.A

    Abstract: GA mosfet
    Text: Ætotxan PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 040-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MÜS FET 200V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt.(l) VDSS Dra in-Ga te Vo 1tage VDGR (R gs = 1 -O M n ) (1)


    OCR Scan     		PDF 5DF220 SDF220 SDF220 JO/93 DS25-.A GA mosfet

    Untitled

    Abstract: No abstract text available
    Text: Æwtran PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 200V, SYMBOL UNITS Drain-source Vo 1t .(1) Dra in -Ga te Vo 1tage (Rgs = 1•O M n ) Cl)


    OCR Scan     		PDF D0Q3T31

    SDF220

    Abstract: No abstract text available
    Text: Æ iitron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 200V, SYMBOL Drain-source Volt. l VDSS Dra in-Gate Vo 1tage VDGR (R gs = 1•OMn) (1) Gate-Source Voltage VGS Cont inuous Drain Current Continuous ID (Tc = 25°C)


    OCR Scan     		PDF SDF220 SDF220 MIL-S-19500