Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150
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LNG849RFD
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N349
Abstract: LN249RPH R942 LN24 LN349GPH LN449YPH LNG849RFD LN249 V30010
Text: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Symbol Rating Orange / Red Diffused Unit M Di ain sc te on na tin nc ue e/ d Parameter Lighting Color / Lens Color PD 90 mW Forward current
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LNG849RFD
N349
LN249RPH
R942
LN24
LN349GPH
LN449YPH
LNG849RFD
LN249
V30010
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage VR 3 V Operating ambient temperature
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LNG849RFD
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage
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LNG849RFD
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g51 SOT23
Abstract: BZX84C2V4-V-G H60 H70 marking G85 Marking g51 BZX84B3V6-V-G marking h60 sot-23 H68 marking code BZX84-V-G
Text: BZX84-V-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes 3 • The zener voltages are graded according to the international E 24 standard. Standard zener voltage tolerance is ± 5 %. Replace “C” with “B”
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BZX84-V-G-Series
AEC-Q101
2002/95/EC
2002/96/EC
BZX84-V-G-series
2011/65/EU
2002/95/EC.
2011/65/EU.
g51 SOT23
BZX84C2V4-V-G
H60 H70
marking G85
Marking g51
BZX84B3V6-V-G
marking h60 sot-23
H68 marking code
BZX84-V-G
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HD66772
Abstract: HD66775 150 g25 capacitor BY176 cl11 capacitor
Text: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,
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HD66775
HD66772
HD66775
150 g25 capacitor
BY176
cl11 capacitor
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HD66775
Abstract: No abstract text available
Text: —PRELIMINARY— HD66775 120-Channel Gate Driver for Color-TFT Liquid Crystal Displays Rev.0.3 September 2001 Description HD66775 is a gate-driver IC for systems with color-TFT-liquid-crystal dot-matrix graphic displays. It incorporates a circuit for driving 120 channels of TFT gate lines, and realizes the liquid crystal
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HD66775
120-Channel
HD66775
HD66775s
HD66770
396-channel
HD667P00
HD66772
528-channel
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BZX84B8V2g
Abstract: No abstract text available
Text: BZX84-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar Zener diodes 3 • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %, indicated by the “C”
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BZX84-G-Series
AEC-Q101
AEC-Q101:
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
BZX84B8V2g
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marking code h65
Abstract: marking h60 sot-23 BZX84C9 G69 marking MARKING H81 BZX84-V-G
Text: BZX84-V-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes 3 • The zener voltages are graded according to the international E 24 standard. Standard zener voltage tolerance is ± 5 %. Replace “C” with “B”
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BZX84-V-G-Series
AEC-Q101
2002/95/EC
2002/96/EC
BZX84-V-G-series
11-Mar-11
marking code h65
marking h60 sot-23
BZX84C9
G69 marking
MARKING H81
BZX84-V-G
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Winbond W83697HF
Abstract: W83697HF acer 8920 B0JK 8456B
Text: ! "
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g61 chipset
Abstract: SL49P 512K-kA SL49Q pentium III motherboard ISA SL4x architecture of pentium microprocessor intel g41 R 133 A SL386
Text: ® Intel Pentium III Xeon Processor Specification Update Release Date: November 2001 Order Number: 244460-031 The Pentium® III Xeon™ processor may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification Update.
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Hipwr30
g61 chipset
SL49P
512K-kA
SL49Q
pentium III motherboard ISA
SL4x
architecture of pentium microprocessor
intel g41
R 133 A
SL386
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Sprecher Schuh LE 2-16
Abstract: Sprecher Schuh CS1 Sprecher Schuh timer Sprecher Schuh LE 2-20
Text: G Control & Timing Relays Control & Timing Relays CS7 Industrial Control Relays. G2 Technical Information. G17
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RM699
SSNA9000
Sprecher Schuh LE 2-16
Sprecher Schuh CS1
Sprecher Schuh timer
Sprecher Schuh LE 2-20
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g84 diode
Abstract: No abstract text available
Text: RECTIFIER, 6kV, 500mA, 350ns IDIOTI i s t i January 7, 1998 QUICK REFERENCE DATA • • • • PF75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE V r= 6000V If= 500mA trr= 35QnS
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500mA,
350ns
TEL805-498-2111
500mA
35QnS
g84 diode
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THGB
Abstract: No abstract text available
Text: IDIOTI is t i January 7, 1998 RECTIFIER, 5kV, 360mA, 30ns PFF50 TEL:805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A X IA L LEADED HERMETICALLY SEALED HIGH VOLTAGE SUPERFAST RECTIFIER DIODE Q U IC K REFERENCE DATA Very low reverse recovery time
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360mA,
PFF50
THGB
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diode 1200A 1000V rectifier
Abstract: BP107 R9G01200A powerex R9G0 5400 5400V
Text: ^OWEREK R9G0 1200A Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 General Purpose Rectifier 1200 Amperes Average 5400 Volts Scale = 2”
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BP107,
040/I
diode 1200A 1000V rectifier
BP107
R9G01200A
powerex R9G0 5400
5400V
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diode 1200A 1000V rectifier
Abstract: BP107 R9G01200A R9G0
Text: 72*Wb21 OOObS'îO 71T W PRX R 9 Q 0 1200A Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 G&HBrdl Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 f j ç ç f j f f e p POIilEREX INC
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BP107,
040/I
R9G01200A
diode 1200A 1000V rectifier
BP107
R9G0
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SEC irf630
Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
Text: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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TT70S7Û
IRF630
IRF631
IRF632
IRF633
IRF633
O-220
SEC irf630
IRF630 SEC
for IRF630
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Untitled
Abstract: No abstract text available
Text: International pmia ^Rectifier_ IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC40U
MIL-S-1950G
T0-254
S54S2
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til 31a
Abstract: IRGMC40U
Text: International ïor iRectifier PD-9.717A IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC40U
IRGMC40UD
IRGMC40UU
MIL-S-19500
O-254
til 31a
IRGMC40U
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irf244
Abstract: pd9528 irf244r
Text: 11E D I 4055452 Q QQTI Q1* ^ | Data Sheet No. PD-9.528A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖ R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRF2 4 4 IRF2 4 5 N-CHANNEL 250 Volt, 0.28 Ohm HEXFET T0-204AA TO-3 Hermetic Package
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T-39-13
T0-204AA
IRF244,
IRF245
irf244
pd9528
irf244r
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74LCX374F/FW/FS Low Vottage Octal D-Type Flip Flop with SV Tolerant Inputs and Outputs The TC74LCX374 is a high performance CMOS OCTAL DTYPE FLIP FLOP. Designed for use in 3.3 Volt systems, it achieves high speed operation while maintaining the CMOS
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TC74LCX374F/FW/FS
TC74LCX374
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igbt inverter welder schematic
Abstract: inverter welder schematic diagram MLT 22 545 arc welder schematic MCT thyristor chARGE PUMP igbt drive inverter welder schematic arc welder inverter k 3918 regulator full bridge arc welder
Text: HIP2030 30V MCT/IGBT Gate Driver Description ± Polarity Gate Drive The HIP2030 is a medium voltage integrated circuit MVIC capable of driving large capacitive loads at high voltage slew rates (dv/dts). This device is optimized for driving 60nF of MOS gate capacitance at 30V peak to peak in less than
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HIP2030
200ns
000pF
120kHz
HIP2030IM
HIP2030
5M-1982.
igbt inverter welder schematic
inverter welder schematic diagram
MLT 22 545
arc welder schematic
MCT thyristor
chARGE PUMP igbt drive
inverter welder schematic
arc welder inverter
k 3918 regulator
full bridge arc welder
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Untitled
Abstract: No abstract text available
Text: f f i H A R R HIP2030 IS S E M I C O N D U C T O R 30V MCT/IGBT Gate Driver January 1995 Features • Description ± Polarity Gate Drive • High Output Voltage Swing. 30V • Peak Output C urren
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HIP2030
200ns
000pF
120kHz
5M-1982.
00b0130
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Untitled
Abstract: No abstract text available
Text: HIP2030 HARRIS S E M I C O N D U C T O R 30V MCT/IGBT Gate Driver July 1998 Description Features ± Polarity Gate Drive The HIP2030 is a medium voltage integrated circuit MVIC capable of driving large capacitive loads at high voltage slew rates (dv/dts). This device is optimized for driving 60nF of
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HIP2030
HIP2030
200ns.
200ns
000pF
1-800-4-HARRIS
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