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    G1 SOT-23 TRANSISTOR Search Results

    G1 SOT-23 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    G1 SOT-23 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking G1 sot-23

    Abstract: MMBT5401 MMBT5551 MARKING G1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1


    Original     		PDF OT-23 MMBT5551 OT-23 MMBT5401 100MHz MMBT5551 marking G1 sot-23 MMBT5401 MARKING G1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT–23 FEATURES z Complementary to MMBT5401 z Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 MMBT5551 MMBT5401

    MMBT5551A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION


    Original     		PDF MMBT5551 OT-23 MMBT5551L MMBT5551-AE3-R MMBT5551L-AE3-R OT-23 QW-R206-010 MMBT5551A

    marking G1 sot23 UTC

    Abstract: No abstract text available
    Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR


    Original     		PDF MMBT5551 OT-23 QW-R206-010, marking G1 sot23 UTC

    sot23 g1

    Abstract: MMBT5551
    Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS 3 *Telephone switching circuit *Amplifier MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR


    Original     		PDF MMBT5551 OT-23 QW-R206-010 sot23 g1 MMBT5551

    TRANSISTOR SMD MARKING g1

    Abstract: CMBT5551 smd transistor g1
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBT5551 C-120 TRANSISTOR SMD MARKING g1 CMBT5551 smd transistor g1

    BFS20

    Abstract: No abstract text available
    Text: BFS20 SMALL SIGNAL NPN TRANSISTOR • ■ ■ Type Marking BFS20 G1 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS COMMON EMITTER IF AMPLIFIER 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BFS20 OT-23 BFS20

    marking G1

    Abstract: No abstract text available
    Text: MMBT5551 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to MMBT5401 Ideal for medium power amplification and switching — MARKING: G1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters)


    Original     		PDF MMBT5551 OT-23 MMBT5401 100MHz marking G1

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT5551 C-120

    mark G1 SOT-23

    Abstract: 2N5551 g1 2N5551 KST5551
    Text: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 Mark: G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KST5551 350mW OT-23 2N5551 mark G1 SOT-23 2N5551 g1 KST5551

    TRANSISTOR SMD MARKING g1

    Abstract: SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5551 C-120 TRANSISTOR SMD MARKING g1 SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5551 C-120

    Untitled

    Abstract: No abstract text available
    Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551


    Original     		PDF MMBT5550 MMBT5551 OT-23

    MMBT5551

    Abstract: MMBT5551 G1 1N914 MMBT5550
    Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551


    Original     		PDF MMBT5550 MMBT5551 OT-23 MMBT5551 MMBT5551 G1 1N914 MMBT5550

    Untitled

    Abstract: No abstract text available
    Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) (3) 1.0 , MMBT5550 MMBT5551 140 160


    Original     		PDF MMBT5550 MMBT5551 OT-23

    MMBT5550

    Abstract: MMBT5551 1N914
    Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO MMBT5550 140 160 6.0 600 MMBT5551 160 180 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100


    Original     		PDF MMBT5550 MMBT5551 OT-23 MMBT5550 MMBT5551 1N914

    STS8216

    Abstract: No abstract text available
    Text: STS8216 Green Product S a mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 20 @ VGS=4.0V


    Original     		PDF STS8216 STS8216

    1N914 SOT-23

    Abstract: MMBT550LT1
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Symbol 5550 5551 Unit Collector −Emitter Voltage Rating VCEO 140 160


    Original     		PDF MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 OT-23-3 1N914 SOT-23 MMBT550LT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. LMBT5550LT1G LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5550LT1G M1F 3000/Tape&Reel LMBT5550LT3G M1F 10000/Tape&Reel LMBT5551LT1G


    Original     		PDF LMBT5550LT1G LMBT5551LT1G 3000/Tape LMBT5550LT3G 10000/Tape LMBT5551LT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551WT1G G1 3000/Tape&Reel LMBT5551WT3G G1 10000/Tape&Reel LMBT5551WT1G 3 1 2 MAXIMUM RATINGS Rating


    Original     		PDF LMBT5551WT1G 3000/Tape LMBT5551WT3G 10000/Tape

    STS8205

    Abstract: S234
    Text: Green Product STS8205 S a mHop Microelectronics C orp. Ver 3.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 27.5 @ VGS=4.0V


    Original     		PDF STS8205 STS8205 S234

    STS8205

    Abstract: No abstract text available
    Text: Green Product STS8205 S a mHop Microelectronics C orp. Ver 3.1 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS ON (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 27.5 @ VGS=4.0V


    Original     		PDF STS8205 STS8205

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel


    Original     		PDF LMBT5551DW1T1G 3000/Tape LMBT5551DW1T3G 10000/Tape OT-363/SC-88

    marking g1

    Abstract: marking HA 7 sot23 transistor bfs20 BFS20
    Text: rZ 7 SGS-THOMSON WiCTOOieS BFS20 SMALL SIGNAL NPN TRANSISTOR Type Marking BFS20 G1 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . COMMON EMITTER IF AMPLIFIER SOT-23 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF BFS20 OT-23 OT-23 marking g1 marking HA 7 sot23 transistor bfs20 BFS20