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    G-LINK TECHNOLOGY STATIC Search Results

    G-LINK TECHNOLOGY STATIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    CS-SATDRIVEX2-001 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-001 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 1m Datasheet

    G-LINK TECHNOLOGY STATIC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    G-Link Technology

    Abstract: G-Link eprom 2701 SOP-330mil 95051
    Text: G -LINK GLT625608 32K x 8 SLOW SPEED CMOS STATIC RAM Feb, 2001 Rev. 1.1 Features : Description : GLT625608 is a 262,144-bit static random access ∗ Available in 70/100ns(MAX.) ∗ Automatic power-down when chip disabled memory organized as 32,768 words by 8 bits and


    Original     		GLT625608 GLT625608 144-bit 70/100ns 330mil G-Link Technology G-Link eprom 2701 SOP-330mil 95051 PDF

    GLT725608-15TS

    Abstract: GLT725608-15J3 GLT725608 GLT725608-12J3 GLT725608-12TC GLT725608-12TS GLT725608-15TC GLT725608-20J3 GLT725608-20TS G-LINK TECHNOLOGY
    Text: G -LINK GLT725608 Ultra High Performance 32K x 8 Bit CMOS STATIC RAM Feb, 2001 Rev.2.4 Features : Description : ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ GLT725608 is high performance 256K bit static random access memory organized as 32K by 8 bits and operate at a single 5 volt supply. Fabricated with


    Original     		GLT725608 GLT725608 330mil GLT725608-15TS GLT725608-15J3 GLT725608-12J3 GLT725608-12TC GLT725608-12TS GLT725608-15TC GLT725608-20J3 GLT725608-20TS G-LINK TECHNOLOGY PDF

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 1.1 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


    Original     		GLT6400M16 GLT6400M16 120ns. 32TYP 75TYP PDF

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6200L08 Ultra Low Power 256k x 8 CMOS SRAM Aug 2001 Rev. 1.2 Features : Description : ∗ The GLT6200L08 is a low power CMOS Static RAM organized as 262,144 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


    Original     		GLT6200L08 GLT6200L08 32-sTSOP. 48Ball 36TYP 75TYP PDF

    TBA 641 B 12

    Abstract: sop-40 small outline TSOPII 1M x 16 SRAM
    Text: G -LINK GLT6200L16 Ultra Low Power 128k x 16 CMOS SRAM Aug 2001 Rev. 2.6 Features : Description : ∗ The GLT6200L16 is a low power CMOS Static RAM organized as 131,072 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin. Low-power consumption.


    Original     		GLT6200L16 GLT6200L16 36TYP 75TYP TBA 641 B 12 sop-40 small outline TSOPII 1M x 16 SRAM PDF

    GLT725608

    Abstract: GLT725608-12TC GLT725608-12TS GLT725608-15J3 GLT725608-15TC GLT725608-15TS GLT725608-20J3 GLT725608-20TS GLT725608-12J3 FPM RAM
    Text: G -LINK GLT725608 Ultra High Performance 32K x 8 Bit CMOS STATIC RAM Feb, 2004 Rev.2.5 Features : Description : ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ 32K x 8-bit organization. Very high speed 12,15,20 ns. Low standby power. Fully static operation 5V±10% power supply.


    Original     		GLT725608 GLT725608 330mil GLT725608-12TC GLT725608-12TS GLT725608-15J3 GLT725608-15TC GLT725608-15TS GLT725608-20J3 GLT725608-20TS GLT725608-12J3 FPM RAM PDF

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 2.0 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


    Original     		GLT6400M16 GLT6400M16 120ns. 32TYP 75TYP PDF

    GLT6100L08LL-100TS

    Abstract: GLT6100L08LL-35ST GLT6100L08LL-35TS GLT6100L08LL-45ST GLT6100L08LL-45TS GLT6100L08LL-55TS GLT6100L08LL-70TS GLT6100L08LL-85TS
    Text: G -LINK GLT6200L08 Ultra Low Power 256k x 8 CMOS SRAM May 2000 Rev. 0.3 Features : Description : ∗ The GLT6200L08 is a low power CMOS Static RAM organized as 262,144 words by 8 bits. Easy memory expansion is provided by an active LOW CE1 Low-power consumption.


    Original     		GLT6200L08 GLT6200L08 32-TSOPI 36TYP 75TYP GLT6100L08LL-100TS GLT6100L08LL-35ST GLT6100L08LL-35TS GLT6100L08LL-45ST GLT6100L08LL-45TS GLT6100L08LL-55TS GLT6100L08LL-70TS GLT6100L08LL-85TS PDF

    "256K x 16" SRAM PLCC

    Abstract: GLT710008
    Text: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2000 Rev. 0.1 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


    Original     		GLT6400M16 GLT6400M16 75TYP 36TYP "256K x 16" SRAM PLCC GLT710008 PDF

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6400L16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 1.2 Features : Description : ∗ The GLT6400L16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


    Original     		GLT6400L16 GLT6400L16 32TYP 75TYP PDF

    23-pin

    Abstract: TBA 640 6200L 1M x 16 SRAM
    Text: G -LINK GLT6200L16 Ultra Low Power 128k x 16 CMOS SRAM May 2001 Rev. 2.3 Features : Description : ∗ The GLT6200L16 is a low power CMOS Static RAM organized as 131,072 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin. Low-power consumption.


    Original     		GLT6200L16 GLT6200L16 36TYP 75TYP 23-pin TBA 640 6200L 1M x 16 SRAM PDF

    GLT6200L08LL-55

    Abstract: GLT6200L08LL-70 GLT6200L08LL-85 GLT6200L08LLI-55 GLT6200L08LLI-70 GLT6200L08LLI-85 GLT6200L08SL-55 GLT6200L08SL-70 GLT6200L08SL-85
    Text: G -LINK GLT6200L08 Ultra Low Power 256k x 8 CMOS SRAM Nov 2000 Rev. 1.0 Features : Description : ∗ The GLT6200L08 is a low power CMOS Static RAM organized as 262,144 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


    Original     		GLT6200L08 GLT6200L08 32-sTSOP. 48Ball 36TYP 75TYP GLT6200L08LL-55 GLT6200L08LL-70 GLT6200L08LL-85 GLT6200L08LLI-55 GLT6200L08LLI-70 GLT6200L08LLI-85 GLT6200L08SL-55 GLT6200L08SL-70 GLT6200L08SL-85 PDF

    GLT710008

    Abstract: 28-pin SOJ SRAM 512k
    Text: G -LINK GLT7256L08 Ultra High Performance 3.3V 32K x 8 Bit CMOS STATIC RAM Mar 2000 REV. 2.0 Features : Description : ∗ 32K x 8-bit organization. ∗ Very high speed – 8,10,12,15 ns. ∗ Low standby power. ∗ ∗ ∗ ∗ ∗ ∗ GLT7256L08 are high performance 256K bit static


    Original     		GLT7256L08 GLT7256L08 GLT7256L08. 300mil GLT710008 28-pin SOJ SRAM 512k PDF

    GLT6400M08LL-120

    Abstract: GLT6400M08SL-120 GLT6400M08SLI-120
    Text: G -LINK GLT6400M08 Ultra Low Power 512k x 8 CMOS SRAM Nov 2000 Rev. 2.0 Features : Description : ∗ The GLT6400M08 is a low power CMOS Static RAM organized as 524,288 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


    Original     		GLT6400M08 GLT6400M08 120ns. 48-fpBGA GLT6400M08LL-120 GLT6400M08SL-120 GLT6400M08SLI-120 PDF

    tba 2003

    Abstract: No abstract text available
    Text: G -LINK GLT6400L16 Ultra Low Power 256k x 16 CMOS SRAM May 2003 Rev. 1.4 Features : Description : ∗ The GLT6400L16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


    Original     		GLT6400L16 GLT6400L16 70ns/85ns 32TYP 75TYP tba 2003 PDF

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6400M08 Ultra Low Power 512k x 8 CMOS SRAM Aug 2001 Rev.3.0 Features : Description : ∗ The GLT6400M08 is a low power CMOS Static RAM organized as 524,288 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


    Original     		GLT6400M08 GLT6400M08 120ns. 445mil PDF

    GLT6400L08

    Abstract: No abstract text available
    Text: G -LINK GLT6400L08 Ultra Low Power 512k x 8 CMOS SRAM Aug 2001 Rev. 1.2 Features : Description : ∗ The GLT6400L08 is a low power CMOS Static RAM organized as 524,288 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


    Original     		GLT6400L08 GLT6400L08 445mil PDF

    100L08

    Abstract: GLT710008 8X13
    Text: G -LINK GLT6100L08 Ultra Low Power 128k x 8 CMOS SRAM Nov 2000 Rev. 02 Features : Description : ∗ The GLT6100L08 is a low power CMOS Static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW CE1 Low-power consumption.


    Original     		GLT6100L08 GLT6100L08 GLT44016-40J4 256Kx16 400mil 8x20mm 100L08 GLT710008 8X13 PDF

    GLT710008

    Abstract: No abstract text available
    Text: G -LINK GLT6100L16 Ultra Low Power 64k x 16 CMOS SRAM May 2000 Rev. 0.3 Features : Description : ∗ The GLT6100L16 is a low power CMOS Static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW CE Low-power consumption.


    Original     		GLT6100L16 GLT6100L16 44pin GLT710008-15T 128Kx8 300mil GLT44016-40J4 256Kx16 400mil GLT710008 PDF

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6100L16 Ultra Low Power 64k x 16 CMOS SRAM May 2000 Rev. 0.3 Features : Description : ∗ The GLT6100L16 is a low power CMOS Static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW CE Low-power consumption.


    Original     		GLT6100L16 GLT6100L16 44pin GLT710008-15T 128Kx8 300mil GLT44016-40J4 256Kx16 400mil PDF

    verilog code for 32 BIT ALU implementation

    Abstract: vhdl code for FFT 32 point radix-2 fft xilinx verilog code for FFT 32 point vhdl code for FFT 256 point 5275 fft algorithm verilog tigersharc verilog code for 64BIT ALU implementation ADSP-TS101S
    Text: ADI-5275 TigerSHARC PH 3/7/03 10:15 AM Page 1 General-Purpose TigerSHARC Processor Highest Performance Floating-Point Processor Key Features Static Superscalar Architecture Optimized for High Throughput Floating-Point Applications • Eight 16-bit MACs/cycle with


    Original     		ADI-5275 16-bit 40-bit 32-bit 80-bit H02441-5-3/03 verilog code for 32 BIT ALU implementation vhdl code for FFT 32 point radix-2 fft xilinx verilog code for FFT 32 point vhdl code for FFT 256 point 5275 fft algorithm verilog tigersharc verilog code for 64BIT ALU implementation ADSP-TS101S PDF

    1G02

    Abstract: IDT74ALVC1G02 IDT74ALVC1G04 IDT74LVC1G79A
    Text: IDT74ALVC1G02 3.3V CMOS SINGLE 2-INPUT POSITIVE-NOR GATE EXTENDED COMMERCIAL TEMPERATURE RANGE IDT74ALVC1G02 ADVANCE INFORMATION 3.3V CMOS SINGLE 2-INPUT POSITIVE-NOR GATE FEATURES: DESCRIPTION: This single 2-input positive-NOR gate is built using advanced dual


    Original     		IDT74ALVC1G02 ALVC1G02 MIL-STD-883, 200pF, IDT74LVC1G79A. IDT74ALVC1G04. 1G02 IDT74ALVC1G02 IDT74ALVC1G04 IDT74LVC1G79A PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS SINGLE INVERTER GATE WITH 5 VOLT TOLERANT I/O J m ï ï ., D E S C R IP TIO N : FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range of - 40°C to +85°C


    OCR Scan     		MIL-STD-883, 200pF, LVC1GU04A: LVC1GU04A IDT74ALVC1G04. 2975StenderWay PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT74ALVC1G04 ADVANCE INFORMATION 3.3V CMOS SINGLE INVERTER GATE FE A T U R E S : D E S C R IP T IO N : - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 0.65mm pitch PSOP package - Extended commercial range of - 40° C to + 85° C


    OCR Scan     		IDT74ALVC1G04 MIL-STD-883, 200pF, ALVC1G04: ALVC1G04 IDT74LVC1G79A. IDT74ALVC1G04. PDF