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    G 23N60 Search Results

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    G 23N60 Price and Stock

    Vishay Siliconix SIHG23N60E-GE3

    MOSFET N-CH 600V 23A TO247AC
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    DigiKey SIHG23N60E-GE3 Tube 500
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    • 1000 $2.21372
    • 10000 $2.21372
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    Bristol Electronics SIHG23N60E-GE3 25 2
    • 1 -
    • 10 $2.3296
    • 100 $1.792
    • 1000 $1.792
    • 10000 $1.792
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    Vishay Intertechnologies SIHG23N60E-GE3

    N-CHANNEL 600V - Bulk (Alt: SIHG23N60E-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHG23N60E-GE3 Bulk 18 Weeks 500
    • 1 -
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    • 1000 $2.78548
    • 10000 $2.38276
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    Mouser Electronics SIHG23N60E-GE3 295
    • 1 $4.48
    • 10 $3.77
    • 100 $2.92
    • 1000 $2.5
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    TTI SIHG23N60E-GE3 Tube 2,500 50
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    • 100 $2.78
    • 1000 $2.61
    • 10000 $2.61
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    EBV Elektronik SIHG23N60E-GE3 19 Weeks 25
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    Vishay Intertechnologies SIHP23N60E-BE3

    MOSFETs TO220 600V 23A N-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHP23N60E-BE3 4,990
    • 1 $2.19
    • 10 $2.19
    • 100 $1.49
    • 1000 $1.45
    • 10000 $1.45
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    Vishay Intertechnologies SIHP23N60E-GE3

    MOSFETs 600V Vds 30V Vgs TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHP23N60E-GE3 992
    • 1 $2.19
    • 10 $2.19
    • 100 $1.49
    • 1000 $1.45
    • 10000 $1.45
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    Vishay Intertechnologies SIHB23N60E-GE3

    MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHB23N60E-GE3 435
    • 1 $2.65
    • 10 $2.65
    • 100 $1.81
    • 1000 $1.76
    • 10000 $1.76
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    Find more G 23N60 price and stock on Findchips.com

    G 23N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data


    Original     		PDF 23N60C5 ISOPLUS220TM E72873 20100303c

    23N60

    Abstract: E72873 A6014
    Text: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data


    Original     		PDF 23N60C5 ISOPLUS220TM E72873 20100303c 23N60 E72873 A6014

    23N60

    Abstract: No abstract text available
    Text: IXTQ 23N60Q Power MOSFETs VDSS ID25 Q-Class = = = RDS on 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 23N60Q 728B1 123B1 728B1 065B1 23N60

    23N60

    Abstract: G 23N60 SiS 961 IXTQ23N60Q 123b1
    Text: IXTQ 23N60Q Power MOSFETs VDSS ID25 Q-Class = = = RDS on 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 23N60Q 728B1 123B1 728B1 065B1 23N60 G 23N60 SiS 961 IXTQ23N60Q

    23N60

    Abstract: G 23N60 transistor N 343 AD 123B1
    Text: IXFH 23N60Q IXFT 23N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS on Q-Class 600 V 23 A 0.32 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings


    Original     		PDF 23N60Q 250ns O-247 O-268 728B1 123B1 728B1 065B1 23N60 G 23N60 transistor N 343 AD

    Untitled

    Abstract: No abstract text available
    Text: IXFH 23N60Q IXFT 23N60Q HiPerFETTM Power MOSFETs VDSS ID25 RDS on Q-Class = = = 600 V 23 A 0.32 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings


    Original     		PDF 23N60Q 250ns O-247 728B1 123B1 728B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: IXKC 23N60C5 Advanced Technical Information ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM


    Original     		PDF 23N60C5 ISOPLUS220TM E72873

    Untitled

    Abstract: No abstract text available
    Text: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM


    Original     		PDF 23N60C5 ISOPLUS220TM E72873

    Untitled

    Abstract: No abstract text available
    Text: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM


    Original     		PDF 23N60C5 ISOPLUS220TM E72873

    23N60

    Abstract: 23n60c5 E72873 IXKC23N60C5 18A60
    Text: IXKC 23N60C5 Advanced Technical Information CoolMOS 1 Po wer MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 23N60C5 ISOPLUS220TM E72873 IXKC23N60C5 20080523a 23N60 23n60c5 E72873 IXKC23N60C5 18A60

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    23N60E

    Abstract: No abstract text available
    Text: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		PDF MS5F6930 FMR23N60E H04-004-05 H04-004-03 23N60E

    23N60

    Abstract: 23N60E
    Text: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMR23N60E MS5F6930 H04-004-05 H04-004-03 23N60 23N60E

    23N60E

    Abstract: 23N60 FMH23N60E electric
    Text: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMH23N60E MS5F6929 H04-004-05 H04-004-03 23N60E 23N60 FMH23N60E electric

    23N60ES

    Abstract: 23N60
    Text: DATE CHECKED Sep.-25-'08 CHECKED Sep.-25-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMR23N60ES MS5F7209 H04-004-05 H04-004-03 23N60ES 23N60

    23N60

    Abstract: 23N60ES ic MARKING QG FMH23N60E
    Text: DATE CHECKED Sep.-29-'08 CHECKED Sep.-29-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMH23N60ES MS5F7208 H04-004-05 H04-004-03 23N60 23N60ES ic MARKING QG FMH23N60E

    SGW23N60UF

    Abstract: No abstract text available
    Text: SGW 23N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=12A) * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls Power Supply


    OCR Scan     		PDF SGW23N60UF SGW23N60UF

    SGW23N60UFD

    Abstract: No abstract text available
    Text: SGW 23N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=12A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		PDF SGW23N60UFD SGW23N60UFD