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    FUJITSU RF POWER AMPLIFIER 1.6 Search Results

    FUJITSU RF POWER AMPLIFIER 1.6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    FUJITSU RF POWER AMPLIFIER 1.6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
    Text: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR class A push pull power amplifier 150w FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b push pull class AB RF linear S110 transistor

    0 281 002 924

    Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5806X 26dBm FMM5806X FCSI0699M200 0 281 002 924 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic

    fujitsu power amplifier GHz

    Abstract: No abstract text available
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5806X 26dBm FMM5806X FCSI0699M200 fujitsu power amplifier GHz

    FUJITSU SEMICONDUCTOR phemt

    Abstract: FMM5806X fujitsu power amplifier GHz power amplifier mmic
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5806X 26dBm FMM5806X FCSI0699M200 FUJITSU SEMICONDUCTOR phemt fujitsu power amplifier GHz power amplifier mmic

    fujitsu power amplifier GHz

    Abstract: power amplifier mmic
    Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 25.5dBm Typ. High Gain: G1dB = 9dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5802X FMM5802X FCSI0599M200 fujitsu power amplifier GHz power amplifier mmic

    FMM5804X

    Abstract: fujitsu power amplifier GHz
    Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P1dB : 23.0dBm (Typ.) • High Gain: (G1dB): 18dB (Typ.) • High PAE: ηadd = 18% (Typ.) • Wide Frequency Band: 17.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology


    Original     		PDF FMM5804X FMM5804X FCSI0599M200 fujitsu power amplifier GHz

    Untitled

    Abstract: No abstract text available
    Text: FMM5052ZE 0.8-2.7GHz Power Amplifier MMIC FEATURES ・Wide Frequency Band : 0.8 to 2.7GHz ・Medium Power : P1dB=26dBm Typ. @ f=0.8-2.7GHz ・High Linear Gain : GL=19dB(Typ.) @ f=0.8-2.7GHz ・Impedance Matched Zin/Zout=50Ω ・Wide Operating Temperature Range


    Original     		PDF FMM5052ZE 26dBm SSOP-16 FMM5052ZE FCSI0202M200

    s29gl032n90

    Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
    Text: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,


    Original     		PDF covPG00-00071e PG00-00071-2E s29gl032n90 MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11

    S29JL032H70

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book


    Original     		PDF PG00-00091-3E ACD-10131 CD-10131 DS04-27211-5E MB3789 S29JL032H70

    Fujitsu GaAs FET Amplifier

    Abstract: FLL2400IU-2C Fujitsu GaAs FET Amplifier design
    Text: FLL2400IU-2C L-Band High Power GaAs FET FEATURES • • • • Push-Pull Configuration High Power Output: 240W Typ. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL2400IU-2C FLL2400IU-2C FCSI1100M200 Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design

    converter dc-dc 24v to 12v tl494

    Abstract: MB39A134/MB39A132A MB39A136
    Text: FUJITSU SEMICONDUCTOR LIMITED Power Management ICs Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome, Kohoku-ku Yokohama Kanagawa 222-0033, Japan Tel: +81-45-415-5858 http://jp.fujitsu.com/fsl/en/ For further information please contact: North and South America


    Original     		PDF LQFP48 TSSOP28 TSSOP24 QFN32 WL-CSP49 SON10 WL-CSP20 converter dc-dc 24v to 12v tl494 MB39A134/MB39A132A MB39A136

    TL494 car charger schematic diagram

    Abstract: tl494 buck dc/dc converter Buck converter with tl494 mb39a118 car power inverter TL494 MB39A129 converter dc-dc 24v to 12v tl494 schematic diagram inverter lcd monitor fujitsu MB39A132 mb39a116
    Text: Power Management ICs FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact:


    Original     		PDF

    fmm5049

    Abstract: FMM5049VT mmic case styles 28492
    Text: FMM5049VT Power Amplifier MMIC FEATURES • • • • High Output Power: Pout = 41.0dBm Typ. High Linear Gain: GL = 33.0dB (Typ.) Broad Band: 1.8 to 2.3GHz Hermetically Sealed Package DESCRIPTION The FMM5049VT is a high-gain, wide band, three-stage MMIC


    Original     		PDF FMM5049VT FMM5049VT FCSI0901M200 fmm5049 mmic case styles 28492

    data acquisation system

    Abstract: MB87L2250 DVB demodulator MB87J217A "channel estimation"
    Text: Product Data Sheet February 2001 Edition 1.0 MB87J217A DVB Terrestrial COFDM Demodulator OVERVIEW The MB87J217A is Fujitsu’s second generation DVB-T ETS / EN 300 744 compliant integrated COFDM Demodulator and Forward-Error-Corrector. Fujitsu, a leading company in CMOS


    Original     		PDF MB87J217A MB87J217A data acquisation system MB87L2250 DVB demodulator "channel estimation"

    Untitled

    Abstract: No abstract text available
    Text: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the


    Original     		PDF FMM5046VF 36dBm FMM5046VF FCSI0200M200

    FLL810IQ-4C

    Abstract: No abstract text available
    Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design


    Original     		PDF FLL810IQ-4C FLL810IQ-4C FCSI05019M200

    FLL810IQ-3C

    Abstract: Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
    Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.


    Original     		PDF FLL810IQ-3C FLL810IQ-3C FCSI05019M200 Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier

    DCS Automation PDF Notes

    Abstract: auTOMATION DCS pdf Notes KU SG 2.45 30 A RX-3 BCC-16 FPT-16P-M05 LQFP-48P MB15G000 SSOP-16 SSOP-20
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-1E Semicustom Bi-CMOS ASTRO-NT for RF front-end LSI-Based on PLL, Analog Macro MB15G000 Series • DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology


    Original     		PDF DS06-70105-1E MB15G000 DCS Automation PDF Notes auTOMATION DCS pdf Notes KU SG 2.45 30 A RX-3 BCC-16 FPT-16P-M05 LQFP-48P SSOP-16 SSOP-20

    MB15H156

    Abstract: XTAL_SMD 2bit quantizer XTAL-SMD 3528 pwm 20 PINS transistor+bc+151+equivalent
    Text: January 2005 MB15H156 RTS v1.51.doc Reference Target Specification Fully Integrated GPS RF Downconverter MB15H156 GENERAL DESCRIPTION The MB15H156 GIRAFE GPS Integrated Radio Analog Front End implements a LNA, an image-reject mixer with a RF-AMP, a band pass filter, an AGC, and a fully


    Original     		PDF MB15H156 MB15H156 564MHz, 456MHz LCC-32P-M08) LCC-32P-M08 -110dBm 456MHz) 128MHz) XTAL_SMD 2bit quantizer XTAL-SMD 3528 pwm 20 PINS transistor+bc+151+equivalent

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-3E Semicustom Bi-CMOS ASTRO-NT for RF front-end LSI-Based on PLL, Analog Macro MB15G000 Series • DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology


    Original     		PDF DS06-70105-3E MB15G000

    cq 949

    Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
    Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz


    OCR Scan     		PDF FMM5802X FMM5802X FCSI0599M200 cq 949 fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053

    Untitled

    Abstract: No abstract text available
    Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P id B : 23.0dBm (Typ.) • High Gain: ( G ^ b ): 18dB (Typ.) • High PAE: riadd = 18% (Typ.) •;■ * ,iq'-4 ‘; .*■' 1; 1TH '-W S *. .•xJ1 ' ji l * ■ ! > : , ! J 9 ■ L 1


    OCR Scan     		PDF FMM5804X FCSI0599M200

    OB 2269

    Abstract: Gigabit Logic 16G071-10L1E hn 834 Fujitsu APD plcs 1530 16G071-10L1 GIGABIT LOGIC INC "gigabit logic" 16G071-10X
    Text: Ig b lï G ig aB it Logic 16G071 Transimpedance Amplifier 18 dB Gain / 700 MHz Bandwidth FEATURES •High gain > 18 dB • Broad Bandwith: DC to 700 MHz typ. ■Low noise: 3 pAA/Hz typ. for 16G071-30L1 • -35.3 dBm input sensitivity for 10'9 BER @ 1.2 Gbit/s


    OCR Scan     		PDF 16G071 16G071-30L1 16G071 OB 2269 Gigabit Logic 16G071-10L1E hn 834 Fujitsu APD plcs 1530 16G071-10L1 GIGABIT LOGIC INC "gigabit logic" 16G071-10X

    RV001

    Abstract: C4805 BCC-16 FPT-16P-M05 LQFP-48 LQFP-64 MB15G000 SSOP-16 SSOP-20 LQFP64
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-3E Semicustom Bi-CMOS ASTRO-NT for RF front-end LSI-Based on PLL, Analog Macro MB15G000 Series • DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology


    OCR Scan     		PDF MB15G000 C48055SC-1 RV001 RV002MIX RV002 C4805 BCC-16 FPT-16P-M05 LQFP-48 LQFP-64 SSOP-16 SSOP-20 LQFP64