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    BFY182

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • Hermetically sealed microwave package • fT = 8GHz F = 2.4dB at 2GHz • esa Space Qualified


    Original     		PDF BFY182 BFY182

    d marking Micro-X

    Abstract: BFY450 RF TRANSISTOR NPN MICRO-X
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz


    Original     		PDF BFY450 19dBm 25-Line Transistor25 QS9000 d marking Micro-X BFY450 RF TRANSISTOR NPN MICRO-X

    BFY181

    Abstract: No abstract text available
    Text: BFY181 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz


    Original     		PDF BFY181 Q62702F1607 QS9000 BFY181

    Q62702F1609

    Abstract: No abstract text available
    Text: BFY183 HiRel NPN Silicon RF Transistor • • • • HiRel Discrete and Microwave Semiconductor 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz


    Original     		PDF BFY183 BFY183 Q62702F1609 Q62702F1713 QS9000

    BFY182

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz •


    Original     		PDF BFY182 Q62702F1608 QS9000 BFY182

    Untitled

    Abstract: No abstract text available
    Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • • fT= 6,5 GHz F = 3 dB at 2 GHz 4


    Original     		PDF BFY196 BFY196 Q62702F1684 QS9000

    BFY181

    Abstract: No abstract text available
    Text: BFY181. HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.2 dB at 2 GHz


    Original     		PDF BFY181. BFY181 BFY181

    microwave transistor bfy193

    Abstract: No abstract text available
    Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • • fT= 8 GHz F = 2.3 dB at 2 GHz 4


    Original     		PDF BFY193 BFY193 Q62702F1610 QS9000 microwave transistor bfy193

    microwave transistor bfy193

    Abstract: BFY193
    Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • Space Qualified


    Original     		PDF BFY193 Q62702F1610 QS9000 microwave transistor bfy193 BFY193

    BFY193

    Abstract: BFY183
    Text: BFY183 HiRel NPN Silicon RF Transistor • • • • HiRel Discrete and Microwave Semiconductor 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz


    Original     		PDF BFY183 Q62702F1609 QS9000 BFY193 BFY183

    Q971

    Abstract: BFY180
    Text: BFY180 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. • Hermetically sealed microwave package • fT= 6,5 GHz F = 2.6 dB at 2 GHz • Space Qualified


    Original     		PDF BFY180 Q97301013 QS9000 Q971 BFY180

    A03 transistor

    Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
    Text: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz


    Original     		PDF Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor Q62702F-1610 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor

    UPA76ha

    Abstract: 2SC2291 uPA49A 2AD149 MA7809 MP2060-6 B1181MP BFX10 HA7808 2N4009
    Text: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE (V) Ic Max (A) fT (Hz) PD Max (W) Mati. Description Package Style NPN Monolithic Pairs, (Co nt' d) 5 10 BFY83 BFY83 BFY83 2N3517 2N3517 MD8003 UPA76HA AD813 2N4044 MP312 ~S~;:~A 15


    Original     		PDF BFY83 2N3517 MD8003 UPA76HA AD813 2N4044 MP312 2SC2291 uPA49A 2AD149 MA7809 MP2060-6 B1181MP BFX10 HA7808 2N4009

    Untitled

    Abstract: No abstract text available
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Medium Power Amplifiers  Hermetically sealed microwave package  Transition Frequency fT = 20 GHz  3 1 2 Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz


    Original     		PDF BFY450 19dBm 25-Line Transistor25

    A03 transistor

    Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
    Text: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz


    Original     		PDF Q62702F1609 Q62702F1713 BFY183 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor BFy 90 transistor microwave transducer marking code microwave

    Untitled

    Abstract: No abstract text available
    Text: BFY183 HiRel NPN Silicon RF Transistor •     4 3 1 2 HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz


    Original     		PDF BFY183 BFY183

    BFy 90 transistor

    Abstract: No abstract text available
    Text: BFY 183 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at co currents from 2mA to 30mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.3 dB at 2 GHz • esa Space Qualified


    Original     		PDF

    A03 transistor

    Abstract: BFY280
    Text: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥


    Original     		PDF Q97302026 Q97111414 BFY280 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor

    Untitled

    Abstract: No abstract text available
    Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For low noise, high-gain amplifiers up to 2GHz.  For linear broadband amplifiers  Hermetically sealed microwave package   4 3 1 2 fT= 6,5 GHz F = 3 dB at 2 GHz


    Original     		PDF BFY196

    marking K "micro x"

    Abstract: MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB = 19 dbm 1.8 GHz Max. available gain Gma = 16 dB at 1.8 GHz • Hermetically sealed microwave package • Transitor frequency fT = 20 GHz


    Original     		PDF BFY450 Transistor25 marking K "micro x" MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450

    marking A04

    Abstract: BFY181 p 181 V Q62702F1715
    Text: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz


    Original     		PDF Q62702F1607 Q62702F1715 BFY181 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 marking A04 p 181 V Q62702F1715

    on semiconductor marking code A04

    Abstract: marking A04 C BFY182
    Text: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz


    Original     		PDF Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 on semiconductor marking code A04 marking A04 C

    A03 transistor

    Abstract: microwave transducer BFY196 BFY 36 transistor
    Text: HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz


    Original     		PDF Q62702F1684 BFY196 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor microwave transducer BFY 36 transistor

    BFY193

    Abstract: No abstract text available
    Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For low noise, high-gain amplifiers up to 2GHz.  For linear broadband amplifiers  Hermetically sealed microwave package   4 3 1 2 fT= 8 GHz F = 2.3 dB at 2 GHz


    Original     		PDF BFY193 BFY193