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    BFY181 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFY181 Infineon Technologies BFY181 Original PDF
    BFY181 Siemens HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Original PDF
    BFY181 (ES) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 12.0 V; IC(max): 20.0 mA; Ptot (max): 175.0 mW; fT (typ): 8.0 GHz; Original PDF
    BFY181ES Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY181ES Siemens HiRel NPN silicon RF transistor Original PDF
    BFY181H Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY181H Siemens HiRel NPN silicon RF transistor Original PDF
    BFY181 (P) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 12.0 V; IC(max): 20.0 mA; Ptot (max): 175.0 mW; fT (typ): 8.0 GHz; Original PDF
    BFY181P Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY181P Siemens HiRel NPN silicon RF transistor Original PDF
    BFY181 (S) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: --; Package: Micro-X; VCEO (max): 12.0 V; IC(max): 20.0 mA; Ptot (max): 175.0 mW; fT (typ): 8.0 GHz; Original PDF
    BFY181S Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY181S Siemens HiRel NPN silicon RF transistor Original PDF

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    BFY181

    Abstract: No abstract text available
    Text: BFY181 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz


    Original     		PDF BFY181 Q62702F1607 QS9000 BFY181

    Untitled

    Abstract: No abstract text available
    Text: BFY181 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz


    Original     		PDF BFY181 BFY181 Q62702F1607 Q62702in QS9000

    Untitled

    Abstract: No abstract text available
    Text: BFY181 HiRel NPN Silicon RF Transistor •     4 3 1 2 HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz


    Original     		PDF BFY181

    BFY181

    Abstract: No abstract text available
    Text: BFY181. HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.2 dB at 2 GHz


    Original     		PDF BFY181. BFY181 BFY181

    Untitled

    Abstract: No abstract text available
    Text: BFY181 HiRel NPN Silicon RF Transistor •     4 3 1 2 HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz


    Original     		PDF BFY181 BFY181

    SIEMENS MICROWAVE RADIO 8 GHz

    Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG


    Original     		PDF MWP-25 MWP-35 SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING

    siemens spc 2

    Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
    Text: HiRel Discrete and HiRel Microwave Semiconductors 1. Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation August 1998 . They are


    Original     		PDF de/semiconductor/products/35/35 de/semiconductor/products/35/353 MWP-25 MWP-35 siemens spc 2 SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67

    microwave transistor bfy193

    Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG


    Original     		PDF MWP-25 MWP-35 microwave transistor bfy193 BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420

    GaAs Amplifier Micro-X Marking k

    Abstract: LNA ku-band Silicon Bipolar Transistor MICRO-X CLY30 CLY27 microwave fet IC gaas fet micro-X Package gaas fet micro-X Package marking SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X "Marking k"
    Text: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components


    Original     		PDF HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k LNA ku-band Silicon Bipolar Transistor MICRO-X CLY30 CLY27 microwave fet IC gaas fet micro-X Package gaas fet micro-X Package marking SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X "Marking k"

    marking A04

    Abstract: BFY181 p 181 V Q62702F1715
    Text: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz


    Original     		PDF Q62702F1607 Q62702F1715 BFY181 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 marking A04 p 181 V Q62702F1715

    Microwave PIN diode

    Abstract: 50kRad BFY196 S microwave fet IC CGY40 krad microwave transistor bfy193 t359 BFY193 ic radiation
    Text: HiRel Discrete & Microwave Semiconductors HiRel Discrete & Microwave Semiconductors Radiation Hardness Analysis/Data of Family types: family given in bracketts • CGY40: (CGY41), Side 2 • CFY66: (CFY67), Side 3 • BXY42: (BXY43, BXY44), Side 4 - 5 • BFY193: (BFY180, BFY280,


    Original     		PDF CGY40: CGY41) CFY66: CFY67) BXY42: BXY43, BXY44) BFY193: BFY180, BFY280, Microwave PIN diode 50kRad BFY196 S microwave fet IC CGY40 krad microwave transistor bfy193 t359 BFY193 ic radiation

    GaAs Amplifier Micro-X Marking k

    Abstract: gaas fet micro-X Package marking GaAs Amplifier Micro-X BFY193 BFY40 CFY66 BFY420 BFY193 Microx Microwave Semiconductors transistor "micro-x" "marking" 3
    Text: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components


    Original     		PDF HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k gaas fet micro-X Package marking GaAs Amplifier Micro-X BFY193 BFY40 CFY66 BFY420 BFY193 Microx Microwave Semiconductors transistor "micro-x" "marking" 3

    A21E

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY181 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • Hermetically sealed microwave package • /- r = 8 GHz, F = 2.2 dB at 2 GHz


    OCR Scan     		PDF BFY181 Q62702F1607 Q62702F1715 BFY181 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A21E

    BXY 36 300

    Abstract: cfy66 GHZ micro-X Package BFY19 CFY67-08 107 micro-x BFY183 BFY420 Microwave Semiconductors BFY193 Microx
    Text: SIEMENS 4 HiRel Discrete and Microwave Semiconductors Selection Guides for HiRel Discrete Semiconductors The Selection Guide provides main maximum ratings and electrical key parameters typical data . 4.1 HiRel Silicon Diodes Low Barrier Silicon Schottky Diodes


    OCR Scan     		PDF BAT15-013/014 BAT15-033/034 BAT15-043/044 BAT15-063/064 BAT15-073/074 BAT15-093/094 BAT15-103/104 MWP-25 MWP-35 BXY 36 300 cfy66 GHZ micro-X Package BFY19 CFY67-08 107 micro-x BFY183 BFY420 Microwave Semiconductors BFY193 Microx